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Silicon-on-insulator transistor with selectable body node to source node connection

  • US 5,079,605 A
  • Filed: 11/27/1989
  • Issued: 01/07/1992
  • Est. Priority Date: 07/29/1988
  • Status: Expired due to Term
First Claim
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1. A transistor formed in a semiconductor layer overlying an insulating film, comprising:

  • a gate electrode overlying a body node portion of said semiconductor layer, said body node portion being of a first conductivity type and having first and second sides;

    a drain region of said semiconductor layer, said drain region being of said second conductivity type and disposed adjacent a first side of said body node portion;

    a source region of said semiconductor layer, said source region being of said second conductivity type, and disposed adjacent a second side of said body node portion;

    a first contact region of said semiconductor layer, said first contact region being of said first conductivity type, disposed adjacent said source region and adjacent said second side of said body node portion;

    a second contact region of said semiconductor layer, said second contact region being of said first conductivity type, disposed adjacent said drain region and adjacent said first side of said body node portion; and

    an ohmic connection between said first contact region and said source region.

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