Optical switching apparatus and method

• US 5,080,504 A
• Filed: 06/28/1990
• Issued: 01/14/1992
• Est. Priority Date: 06/28/1990
• Status: Expired due to Fees

• Current Assignee: Varian Associates, Inc.
• Original Assignee: Varian Associates, Inc.
• Inventors: Partain, Larry D., Schultz, Jocelyn C., Ristow, Maria L., Virshup, Gary F.
• Primary Examiner(s): Lee, John D.
• Assistant Examiner(s): Heartney, Phan T.
• Application Number:
  US07/546,205
• Time in Patent Office: 565 Days
• Field of Search: 350/96.13, 350/96.20
• US Class Current: 385/17
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02F 1/0147 based on thermo-optic effects G02F1/132 takes precedence
• CPC Class Codes: G02F 1/015 based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction G02F1/03 takes precedence
• CPC Class Codes: G02F 1/017 Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
• CPC Class Codes: H04Q 11/0003 Details

Abstract

An apparatus and method for switching unpolarized light are provided. The apparatus includes GaInAs/GaAs optical switching devices which can be fabricated using conventional processes on a single wafer in matrix arrangement to provide an n×m cross bar switch. Switching is accomplished by shifting the band gap of the GaInAs material of a device using electrical or optical power to heat the material. Each switching device may comprise two-polarity (n/p) or single polarity (n or p) semiconductor materials.

Claims

1. An apparatus for controlling the transmission of a light signal of a selected wavelength therethrough, the apparatus comprising:

an active semiconductor region having a temperature-dependent band gap energy, the band gap energy of the active semiconductor region at a first temperature value being greater than the photon energy of the selected wavelength, and at a second temperature value being equal to or lesser than the photon energy of the selected wavelength;

means for receiving a light signal of the selected wavelength into at least a portion of the active semiconductor region; and

means for controlling the temperature of the active semiconductor region, the temperature controlling means including means for receiving a control signal to heat the active semiconductor region, whereby;

in the absence of the control signal the temperature of the active semiconductor region is caused to be at the first temperature value and a portion of the light signal received by the active semiconductor region is emitted from the active semiconductor region, and

receiving the control signal the temperature of the active semiconductor region is caused to switch to the second temperature value for at least as long as the control signal is received to decrease the portion of the light signal emitted from the active semiconductor region.

2. The apparatus of claim 1, wherein the control signal comprises a second light signal which is sufficiently absorbed by the active semiconductor region to heat at least a portion of the active semiconductor region to the second temperature value.

3. The apparatus of claim 1, wherein the control signal comprises a voltage differential applied to the apparatus for causing an electrical current to be generated in the active semiconductor region sufficient to heat at least a portion of the active semiconductor region to the second temperature value.

4. The apparatus of claim 1, wherein the active semiconductor region comprises a plurality of semiconductor layers, at least two of the semiconductor layers forming a pn junction therebetween.

5. The apparatus of claim 1, wherein the active semiconductor region comprises semiconductor material of a single polarity.

6. The apparatus of claim 1, further comprising a semiconductor substrate that is low doped to be transparent below its band gap energy and has a band gap energy that is higher than that of the active semiconductor region that performs switching.

7. A semiconductor device for switching a light signal of a selected wavelength, comprising:

a semiconductor substrate;

an active switching region of semiconductor material formed on the substrate and having a band gap edge at room temperature at a wavelength shorter than the selected wavelength;

a layer of semiconductor material formed between the active region and the substrate to accommodate lattice mismatch;

a surface formed on the active switching region for receiving the light signal;

and means for receiving a control signal to selectively raise the temperature-of the active switching region above room temperature so as to cause the band gap edge of the active semiconductor region to switch to a wavelength longer than the selected wavelength, whereby the device is switched from an on state to an off state.

8. The device of claim 7, wherein the means for receiving a control signal comprises a surface for receiving a second light signal that is absorbed by the active switching region.

9. The device of claim 8, wherein the second light signal is received at the same surface as the light signal of the selected wavelength.

10. The device of claim 7, wherein the means for receiving a control signal comprises first and second metallization layers formed on opposite sides of the device in a manner such that the active switching region can be sufficiently heated to cause switching by creating a voltage differential between the two metallization layers.

11. The device of claim 7, wherein the surface for receiving the light signal comprises an antireflective coating.

12. The device of claim 7, further comprising an antireflective coating on a surface of the substrate for emitting the light signal from the device.

13. The device of claim 12 wherein the substrate comprises low doped indium phosphide and the active switching region comprises gallium indium arsenide phosphide.

14. The device of claim 7, wherein the substrate comprises gallium arsenide and the active switching region comprises gallium indium arsenide.

15. An optical cross bar switch comprising:

a substrate of semiconductor material;

switching means including a plurality of individual thermally activated switching devices for selectively switching light signals, the devices being formed in a parallel matrix on the substrate and each device comprising an active semiconductor switching region in which switching is activated by applying a control signal to the device to change the temperature of the active semiconductor switching region, whereby the thermally activated switching of a light signal can be controlled without requiring variation of a property of the light signal to activate switching; and

a light receiving surface formed on each switching device.

16. The cross bar switch of claim 15, further comprising:

a metal contact region formed on each switching device for providing electrical contact to the active semiconductor switching region of the device; and

a metal grid formed on the substrate opposite from the switching devices, the metal grid having a separate light transmissive opening associated with each of the plurality of switching devices.

17. The cross bar switch of claim 15, wherein the active semiconductor switching region of each switching device comprises a semiconductor material selected to switch a nonpolarized light signal of a selected wavelength.

18. The cross bar switch of claim 17, wherein the active semiconductor switching region comprises a multiple quantum well structure.

19. The optical cross bar switch of claim 15, wherein the switching means includes means for providing a controllable degree of thermal isolation between active semiconductor switching regions, whereby switching speed and thermal power required to activate switching in the individual switching devices can be selectively balanced.

20. The optical cross bar switch of claim 19, wherein the thermal isolation means comprises a trench separating the active semiconductor switching region of an individual switching device from the active switching regions of other individual switching devices in the parallel matrix.

21. The optical cross bar switch of claim 20, wherein the trench comprises a trench etch extending into the substrate.

22. A method for switching a light signal of a selected wavelength, comprising the steps of:

transmitting the light signal into a switching medium having a thermally sensitive coefficent of optical absorption at the selected wavelength;

disposing the switching medium such that at least a portion of the light signal transmitted into the switching medium exits the switching medium and is received by a light receiving device; and

controlling the temperature of the switching medium by selectively applying a second signal to the switching medium, the application of the second signal to the switching medium causing an increase in the temperature of at least a portion of the medium into which the light signal is transmitted whereby the second signal causes the switching medium to switch from an on state to an off state and the portion of the light signal exiting the switching medium is decreased.

23. A method for switching a light signal of a selected wavelength, comprising the steps of:

transmitting the light signal into a switching medium having a thermally sensitive coefficent of optical absorption at the selected wavelength;

disposing the switching medium such that at least a portion of the light signal transmitted into the switching medium exits the switching medium and is received by a light receiving device; and

controlling the temperature of the switching medium by selectively applying a second signal to the switching medium, the application of the second signal to the switching medium causing an increase in the temperature of at least a portion of the medium into which the light signal is transmitted whereby the second signal causes the switching medium to switch from an off state to an on state and the portion of the light signal exiting the switching medium is increased.