Method for conditioning the surface of a polishing pad
First Claim
1. In a process for polishing a dielectric layer formed on the semiconductor substrate, said process utilizing an apparatus which includes a rotatable table covered with a pad, a means for coating the surface of said pad with an abrasive slurry, and a means for forcibly pressing said substrate against said surface such that rotation of movement of said table relative to said substrate results in planarization of said dielectric layer, a method of conditioning said surface to improve the polishing characteristics of said process comprising the steps of:
- placing the serrated edge of an elongated blade member in radial contact with said surface of said pad, said blade member being at least as wide as the width of the path traversed by said substrate across said pad during said polishing process;
rotating said table relative to said blade member while simultaneously pressing said substrate against said pad such that said serrated edge cuts a plurality of substantially circumferential grooves into said surface, said grooves being dimensioned so as to facilitate said polishing process.
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Accused Products
Abstract
An improved method for conditioning the surface of a pad for polishing a dielectric layer formed on a semiconductor substrate is disclosed. In one embodiment, the serrated edge of an elongated blade member is first placed in radial contact with the surface of the polishing pad. The table and the pad are then rotated relative to the blade member. At the same time, the blade member is pressed downwardly against the pad surface such that the serrated edge cuts a plurality of substantially circumferential grooves into the pad surface. These grooves are dimensioned so as to facilitate the polishing process by creating point contacts which increases the pad area and allows more slurry to applied to the substrate per unit area. Depending on the type of pad employed, the number of teeth per inch on the serrated edge, the type of slurry used, etc., the downward force applied to the blade member in the rotational speed of the table are optimized to obtain the resultant polishing rate and uniformity desired.
177 Citations
18 Claims
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1. In a process for polishing a dielectric layer formed on the semiconductor substrate, said process utilizing an apparatus which includes a rotatable table covered with a pad, a means for coating the surface of said pad with an abrasive slurry, and a means for forcibly pressing said substrate against said surface such that rotation of movement of said table relative to said substrate results in planarization of said dielectric layer, a method of conditioning said surface to improve the polishing characteristics of said process comprising the steps of:
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placing the serrated edge of an elongated blade member in radial contact with said surface of said pad, said blade member being at least as wide as the width of the path traversed by said substrate across said pad during said polishing process; rotating said table relative to said blade member while simultaneously pressing said substrate against said pad such that said serrated edge cuts a plurality of substantially circumferential grooves into said surface, said grooves being dimensioned so as to facilitate said polishing process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. In a polishing process utilizing an apparatus which forcibly presses a semiconductor substrate against a pad coated with an abrasive material, said pad in said substrate being set in relative movements to one another to facilitate planarization of a dielectric layer formed on said substrate, a method of conditioning the surface of said pad and comprising the steps of:
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(a) placing a blade member having a serrated edge on said pad such that said serrated edge contacts said surface of said pad; (b) rotating said pad relative to said blade member; and (c) forcibly pressing said blade member against said pad such that said serrated edge cuts a plurality of substantially circumferential grooves into said surface, said grooves being dimensioned so as to channel said slurry beneath said substrate during polishing, thereby enhancing the polishing rate and uniformity of said process. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification