In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection

• US 5,081,421 A
• Filed: 05/01/1990
• Issued: 01/14/1992
• Est. Priority Date: 05/01/1990
• Status: Expired due to Term

• Current Assignee: American Telephone & Telegraph Company (AT&T, Inc.)
• Original Assignee: AT&T, Inc.
• Inventors: Wagner, Eric R., Miller, Gabriel L.
• Primary Examiner(s): Wieder, Kenneth A.
• Assistant Examiner(s): Regan, Maura K.
• Application Number:
  US07/517,106
• Time in Patent Office: 623 Days
• Field of Search: 324/671, 324/688, 324/158 D, 324/687, 437/8, 156/627, 156/635, 156/636, 156/637
• US Class Current: 324/671
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: G01B 7/085 for measuring thickness of coating
• CPC Class Codes: G01B 7/345 for measuring evenness

Abstract

This invention provides an in situ monitoring technique and apparatus for chemical/mechanical planarization end point detection in the process of fabricating semiconductor or optical devices. Fabrication of semiconductor or optical devices often requires smooth planar surfaces, either on the surface of a wafer being processed or at some intermediate stage e.g. a surface of an interleaved layer. The detection in the present invention is accomplished by means of capacitively measuring the thickness of a dielectric layer on a conductive substrate. The measurement involves the dielectric layer, a flat electrode structure and a liquid interfacing the article and the electrode structure. Polishing slurry acts as the interfacing liquid. The electrode structure includes a measuring electrode, an insulator surrounding the measuring electrode, a guard electrode and another insulator surrounding the guard electrode. In the measurement a drive voltage is supplied to the measuring electrode, and in a bootstrap arrangement to a surrounding guard electrode, thereby measuring the capacitance of the dielectric layer of interest without interferring effect from shunt leakage resistance. The process and apparatus are useful not only for measuring the thickness of dielectric layers on conductive substrates in situ, during planarizing polishing, but also for measuring the dielectric thickness on substrates in other processes, e.g. measuring the dielectric layer thickness prior to or after an etching process.

Claims

1. A process for in situ monitoring the thickness of a dielectric material on a lateral surface of an electrically conductive substrate having less than about one megohm-cm resistivity, which comprises

placing the substrate so that a surface of an electrode structure faces the dielectric material, said electrode structure comprises a measuring electrode, an insulator surrounding the measuring electrode, a guard electrode surrounding said insulator and another insulator surrounding the guard electrode,

interposing between the substrate and the surface of the electrode structure a film of a conductive liquid with resistivity of less than about 100,000 ohm-cm, said film being in contact with the dielectric material and with the surface of the electrode structure, and

measuring the capacitance between the substrate and the electrode structure by applying a measuring (drive) voltage with an operating frequency of up to 5000 Hz to the surface of the measuring electrode and simultaneously removing effects of leakage resistance path on a measuring result by bootstrapping the guard electrode with a guard voltage, and by maintaining constant displacement current resulting from said voltage application, the amplitude of the drive voltage being proportional to the thickness of the dielectric layer.

2. The process of claim 1, in which said conductive material comprises a material selected from the group consisting of silicon, germanium, group III-V compound semiconductors, and group II-VI compound semiconductors.

3. The process of claim 1, wherein said dielectric material comprises a material selected from silicon oxide, silicon nitride, oxynitride, a chemical vapor deposited silicon oxide, plasma enhanced chemical vapor deposited oxide and spin-on glass.

4. The process of claim 1, in which said operating frequency is about 500 Hz.

5. The process of claim 1, in which said monitoring is conducted in the process of planarizing dielectric layer on a lateral face of the conductive substrate.

6. A process for in situ monitoring the thickness of a dielectric material on a lateral surface of an electrically conductive substrate having less than about one megohm-cm resistivity, which comprises

placing the substrate so that a surface of an electrode structure faces the dielectric material, said electrode structure comprises a measuring electrode, an insulator surrounding the measuring electrode, a guard electrode surrounding said insulator and another insulator surrounding the guard electrode,

interposing between the substrate and the surface of the electrode structure a film of a conductive liquid with resistivity of less than about 100,000 ohm-cm, said film being in contact with the dielectric material and with the surface of the electrode structure,

measuring the capacitance between the substrate and the electrode structure by applying a measuring (drive) voltage with an operating frequency of up to 5000 Hz to the surface of the measuring electrode and bootstrapping the guard electrode with a guard voltage, and by maintaining constant displacement current resulting from said voltage application, the amplitude of the drive voltage being proportional to the thickness of the dielectric layer, and

in which two equal electrode structures are arranged side by side, and said measuring voltage is applied to one electrode structure at 180°

out of phase to the measuring voltage being applied to the other electrode structure.

7. The process of claim 6, in which said conductive material comprises a material selected from the group consisting of silicon, germanium, group III-V compound semiconductors, and group II-VI compound semiconductors.

8. The process of claim 6, wherein said dielectric material comprises a material selected from silicon oxide, silicon nitride, oxynitride, a chemical vapor deposited silicon oxide, plasma enhanced chemical vapor deposited oxide and spin-on glass.

9. The process of claim 6, in which said operating frequency is about 500 Hz.

10. The process of claim 6, in which said monitoring is conducted in the process of planarizing dielectric layer on a lateral face of the conductive substrate.

11. An apparatus for monitoring the thickness of a dielectric layer remaining on a surface of a workpiece during polishing in a lapping machine with a polishing slurry, said workpiece comprising a conductive portion with resistivity of less than about one megohm-cm and dielectric material on a lateral face of the conductive portion, which apparatus comprises

at least one electrode structure having a flat surface for facing the lateral face of the workpiece being polished, said electrode structure comprising a conductive measuring electrode, an insulator surrounding the measuring electrode, a conductive guard electrode surrounding the insulator and being separated by the insulator from the measuring electrode and another insulator surrounding the guard electrode,

means for providing a conductive liquid medium (the polishing slurry) such that the said face of the workpiece and said flat surface of the electrode structure interface through the liquid medium (aqueous slurry), and

means for measuring the capacitance between the conductive portion of the workpiece and the electrode structure, the measuring means comprises means for supplying drive voltage with an operating frequency of up to 5000 Hz to the measuring electrode and in a bootstrap arrangement to the guard electrode while maintaining constant displacement current resulting from the voltage application, the amplitude of the drive voltage being proportional to the thickness of the dielectric layer thereby measuring the capacitance of the dielectric layer undergoing polishing.

12. The apparatus of claim 11, in which said operating frequency is about 500 Hz.

13. The apparatus of claim 11 in which said measuring comprises an electronic system for supplying drive voltage to said measuring electrode and in a bootstrap arrangement to the guard electrode, and for maintaining constant displacement current so that the resulting magnitude of the drive voltage is automatically proportional to the thickness of the dielectric layer.

14. The apparatus of claim 11, in which the lapping machine comprises a polishing table, a polishing pad on said table, and a movable wafer carrier suspended above the polishing table for bringing the workpiece into contact with said polishing pad.

15. The apparatus of claim 14, wherein said electrode structure is imbedded into the polishing table with its flat surface being in the same plane as the polishing table.

16. The apparatus of claim 14, in which the polishing pad is secured to the polishing table by an adhesive plastic coating, and in which said plastic coating is provided with apertures permitting the liquid medium to make an electrically conductive path to the flat surface of the electrode structure.

17. The apparatus of claim 14, in which the polishing pad is secured to the polishing table by a conductive adhesive.

18. The apparatus of claim 14, in which said polishing table is of a material chosen from conductive and non-conductive materials which are non-contaminating with respect to the material of the workpiece.

19. The apparatus of claim 18, in which said conductive material comprises a material selected from the group consisting of stainless steel, aluminum and cermets, or of metals such as aluminum, chromium or titanium deposited in suitable patterns on insulating materials and said nonconducting material comprises a material selected from the group consisting of quartz, ceramic, glass, plastic, and insulator-coated metals.

20. An apparatus for monitoring the thickness of a dielectric layer remaining on a surface of a workpiece during polishing in a lapping machine with a polishing slurry, said workpiece comprising a conductive portion with resistivity of less than about one megohm-cm and dielectric material on a lateral face of the conductive portion, which apparatus comprises

at least one electrode structure having a flat surface for facing the lateral face of the workpiece being polished, said electrode structure comprising a conductive measuring electrode, an insulator surrounding the measuring electrode, a conductive guard electrode surrounding the insulator and being separated by the insulator from the measuring electrode and another insulator surrounding the guard electrode,

means for providing a conductive liquid medium (the polishing slurry) such that the said face of the workpiece and said flat surface of the electrode structure interface through the liquid medium (aqueous slurry),

means for measuring the capacitance between the conductive portion of the workpiece and the electrode structure, the measuring means comprises means for supplying drive voltage to the measuring electrode and in a bootstrap arrangement to the guard electrode while maintaining constant displacement current resulting from the voltage application, the amplitude of the drive voltage being proportional the to the thickness of the dielectric layer thereby measuring the capacitance of the dielectric layer undergoing polishing, and

in which two equal electrode structures are arranged side by side, said measuring voltage is applied to one electrode structure at 180°

out of phase to the measuring voltage being applied to the other electrode structure.

21. The apparatus of claim 20, in which said operating frequency is about 500 Hz.

22. The apparatus of claim 20, in which said measuring means comprises an electronic system for supplying drive voltage to said measuring electrode and in a bootstrap arrangement to the guard electrode, and for maintaining constant displacement current so that the resulting magnitude of the drive voltage is automatically proportional to the thickness of the dielectric layer.

23. The apparatus of claim 20, in which the lapping machine comprises a polishing table, a polishing pad on said table, and a movable wafer carrier suspended above the polishing table for bringing the workpiece into contact with said polishing pad.

24. The apparatus of claim 23, wherein said electrode structure is imbedded into the polishing table with its flat surface being in the same plane as the polishing table.

25. The apparatus of claim 23, in which the polishing pad is secured to the polishing table by an adhesive plastic coating, and in which said plastic coating is provided with apertures permitting the liquid medium to make an electrically conductive path to the flat surface of the electrode structure.

26. The apparatus of claim 23, in which the polishing pad is secured to the polishing table by a conductive adhesive.

27. The apparatus of claim 23, in which said polishing table is of a material chosen from conductive non-contaminating with respect to the material of the workpiece.

28. The apparatus of claim 27, in which said conductive material comprises a material selected from the group consisting of stainless steel, aluminum and cermets, or of metals such as aluminum, chromium or titanium deposited in suitable patterns on insulating materials and said nonconducting material comprises a material selected from the group consisting of quartz, ceramic, glass, plastic, and insulator-coated metals.

29. A process of fabricating a device, which comprises

fabricating a device structure on a substrate so as to yield a non-planar surface, said substrate having resistivity of less than about one megohm-cm,

forming a layer of dielectric material over the non-planar surface,

reducing the thickness of said dielectric layer progressively,

monitoring the remaining thickness so as to determine a desired end-point of the reduction, and

continue fabrication of said device,

wherein said desired end-point is determined by measuring the capacitance between the substrate and an electrode structure facing the substrate while the face of the substrate and the surface of the electrode structure facing the substrate are interfaced by a continuous conductive film of a liquid with resistivity of less than about 100,000 ohm-cm, said electrode structure comprising a measuring electrode, an insulator surrounding the measuring electrode, a guard electrode surrounding said insulator and another insulator surrounding the guard electrode,

wherein said capacitive measuring includes measuring the capacitance and simultaneously removing effects of leakage resistance on the measuring result by applying a measuring voltage with an operating frequency of up to 5000 Hz to the measuring electrode and in a bootstrap manner to the guard electrode, and by maintaining constant displacement current resulting from said voltage application, the amplitude of the drive voltage being proportional to the thickness of the dielectric layer.

30. The process of claim 29, in which said conductive material comprises a material selected from the group consisting of silicon, germanium, group III-V compound semiconductors, and group II-VI compound semiconductors.

31. The process of claim 30, in which said conductive material is silicon.

32. The process of claim 29 wherein said dielectric material comprises a material selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, a chemical vapor deposited oxide, plasma enhanced chemical vapor deposited oxide and spin-on glass.

33. The process of claim 32, in which said dielectric material comprises a chemical vapor deposited oxide.

34. The process of claim 29, in which said operating frequency is about 500 Hz.

35. A process of fabricating a device, which comprises

fabricating a device structure on a substrate so as to yield a non-planar surface, said substrate having resistivity of less than about one megohm-cm,

forming a layer of dielectric material over the non-planar surface,

reducing the thickness of said dielectric layer progressively,

monitoring the remaining thickness so as to determine a desired end-point of the reduction, and

continue fabrication of said device,

wherein said desired end-point is determined by measuring the capacitance between the substrate and an electrode structure facing the substrate while the face of the substrate and the surface of the electrode structure facing the substrate are interfaced by a continuous conductive film of a liquid with resistivity of less than about 100,000 ohm-cm, said electrode structure comprising a measuring electrode, an insulator surrounding the measuring electrode, a guard electrode surrounding said insulator and another insulator surrounding the guard electrode,

wherein said capacitive measuring includes measuring the capacitance and simultaneously removing effects of leakage resistance on the measuring result by applying a measuring voltage with an operating frequency of up to 5000 Hz to the measuring electrode and in a bootstrap manner to the guard electrode, and by maintaining constant displacement current resulting from said voltage application, the amplitude of the drive voltage being proportional to the thickness of the dielectric layer, and

in which two equal electrode structures are arranged side by side, and said measuring voltage is applied to one electrode structure a 180°

out of phase to the measuring voltage being applied to the other electrode structure.

36. The process of claim 35, in which said conductive material comprises a material selected from the group consisting of silicon, germanium, group III-V compound semiconductors, and group II-VI compound semiconductors.

37. The process of claim 35, in which said conductive material is silicon.

38. The process of claim 35, wherein said dielectric material comprises a material selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, a chemical vapor deposited oxide, plasma enhanced chemical vapor deposited oxide and spin-on glass.

39. The process of claim 35, in which said dielectric material comprises a chemical vapor deposited oxide.

40. The process of claim 35, in which said operating frequency is about 500 Hz.

41. An apparatus for measuring the thickness of a dielectric region on a lateral face of article having a conductive portion with resistivity of less than about one megohm-cm and dielectric material on a lateral face of the conductive portion, which comprises

an electrode structure having a flat surface, the dielectric layer on said article facing the said flat surface, said electrode structure comprises a measuring electrode, an insulator surrounding the measuring electrode, a guard electrode surrounding the insulator and another insulator surrounding the guard electrode,

conductive liquid means for interfacing the conductive article and the flat surface of the electrode structure and for establishing an electrical connection between the conductive article and said flat surface of the electrode structure, and

means for measuring the capacitance between the conductive article and the measuring electrode structure, the measuring means comprises means for supplying drive voltage with an operating frequency of up to 5000 Hz to the measuring electrode and in a bootstrap arrangement to the guard electrode thereby measuring the capacitance of the dielectric layer thickness without interfering leakage resistance.

42. The apparatus of claim 41 in which said measuring means comprises an electronic system for supplying drive voltage to said measuring electrode and in a bootstrap arrangement to the guard electrode, and for maintaining constant displacement current so that the magnitude of the drive voltage is thereby proportional to the thickness of the dielectric layer.

43. The apparatus of claim 41, in which said operating frequency is about 500 Hz.

44. An apparatus for measuring the thickness of a dielectric region on a lateral face of article having a conductive portion with resistivity of less than about one megohm-cm and dielectric material on a lateral face of the conductive portion, which comprises

an electrode structure having a flat surface, the dielectric layer on said article facing the said flat surface, said electrode structure comprises a measuring electrode, an insulator surrounding the measuring electrode, a guard electrode surrounding the insulator and another insulator surrounding the guard electrode,

conductive liquid means for interfacing the conductive article and the flat surface of the electrode structure and for establishing an electrical connection between the conductive article and said flat surface of the electrode structure,

means for measuring the capacitance between the conductive article and the measuring electrode structure, the measuring means comprises means for supplying drive voltage to the measuring electrode and in a bootstrap arrangement to the guard electrode thereby measuring the capacitance of the dielectric layer thickness without interfering leakage resistance;

and

in which two equal electrode structures are arranged side by side, and said measuring voltage is applied to one electrode structure at 180°

out of phase to the measuring voltage being applied to the other electrode structure.

45. The apparatus of claim 44 in which said measuring means comprises an electronic system for supplying drive voltage to said measuring electrode and in a bootstrap arrangement to the guard electrode, and for maintaining constant displacement current so that the magnitude of the drive voltage is thereby proportional to the thickness of the dielectric layer.

46. The apparatus of claim 44, in which said operating frequency is about 500 Hz.