Broadband merged switch

• US 5,081,706 A
• Filed: 07/30/1987
• Issued: 01/14/1992
• Est. Priority Date: 07/30/1987
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Kim, Bumman
• Primary Examiner(s): Olms, Duglas W.
• Assistant Examiner(s): Smith, Ralph
• Application Number:
  US07/079,733
• Time in Patent Office: 1,629 Days
• Field of Search: 330/286, 330/55, 330/54, 330/277, 330/9, 455/78, 455/326, 333/109, 333/104, 333/101, 333/103, 333/111, 333/112, 333/262, 307/241
• US Class Current: 455/78
• CPC Class Codes: H01P 1/15 by semiconductor devices
• CPC Class Codes: H03F 3/607 using FET's

Abstract

Monolithic broadband semiconductor single-pole, double-throw switches are merged into distributed monolithic amplifiers and decrease the total semiconductor chip area occupied by the devices.

Claims

1. A broadband switch for a distributed parameter device, comprising:

(a) a first active device having high and low impedance states in series with an input transmission line of said distributed parameter device, said distributed parameter device having said input transmission line and an output transmission line;

(b) at least one second active device having high and low impedance states shunt connected to said input transmission line; and

(c) impedance controls for said active devices to switch between said high and low impedance states;

wherein;

(d) said distributed parameter device is a distributed amplifier including N sections with each of said sections including an output transmission line segment, an input transmission line segment, and a gain device having an input connected to said input transmission line segment;

(e) said N input transmission line segments are connected to form said input transmission line;

(f) said N output transmission line segments are connected to form said output transmission line; and

(g) said at least one second active device shunt connected to said input transmission line is connected to one of said input transmission line segments.

2. A broadband switch for a distributed parameter device, comprising:

(a) a first active device having high and low impedance states in series with an input transmission line of said distributed parameter device, said distributed parameter device having said input transmission line and an output transmission line;

(b) at least one second active device having high and low impedance states shunt connected to said input transmission line; and

(c) impedance controls for said active devices to switch between said high and low impedance states;

wherein;

(d) said at least one second active device shunt connected to said input transmission line is two second active devices shunt connected to said input transmission line;

wherein;

(e) said distributed parameter device is a distributed amplifier including N sections with each of said sections including an output transmission line segment, an input transmission line segment, and a gain device having an input connected to said input transmission line segment and an output connected to said output transmission line segment;

(f) said N input transmission line segments are connected to form said input transmission line;

(g) said N output transmission line segments are connected to form an output transmission line; and

(h) each of said two second active devices shunt connected to said input transmission line is connected to one of said input transmission line segments, and the two segments with shunt active devices differ.

3. The switch of claim 2, wherein:

(a) said input transmission line segments are microstrip transmission line segments;

(b) said output transmission line segments are microstrip transmission line segments;

(c) said gain devices are MESFETs;

(d) each of said two second active devices shunt connected is a MESFET; and

(e) said first active device series connected is a MESFET.

4. The switch of claim 2, wherein:

(a) said input transmission line segments are microstrip transmission line segments;

(b) said output transmission line segments are microstrip transmission line segments;

(c) said gain devices are MESFETs;

(d) each of said two second active devices shunt connected is a plurality of MESFETs connected in series; and

(e) said first active device series connected is a MESFET.

5. The switch of claim 2, wherein:

(a) said input transmission line segments are microstrip transmission line segments;

(b) said output transmission line segments are microstrip transmission line segments;

(c) said gain devices are bipolar transistors;

(d) said two second active devices shunt connected are each a p-i-n diode; and

(e) said first active device series connected is a p-i-n diode.

6. A single-pole, double-throw switch for two distributed parameter devices, comprising:

(a) a first active device having high and low impedance states in series with a first input transmission line of a first of said two distributed parameter devices, said first distributed parameter device having said first input transmission line and a first output transmission line;

(b) a second active device having high and low impedance states in series with a second input transmission line of a second of said two distributed parameter devices, said second distributed parameter device having said second input transmission line and a second output transmission line;

(c) a third active device having high and low impedance states shunt connected to said first input transmission line;

(d) a fourth active device having high and low impedance states shunt connected to said second input transmission line; and

(e) impedance controls for said active devices to switch between said high and low impedance states with said first and fourth active devices in the same impedance state and said second and third active devices both in an impedance state different from the impedance state of said first and fourth active devices.

7. The switch of claim 6, wherein:

(a) said first distributed parameter device is a distributed amplifier including N sections with each of said sections including an output transmission line segment, an input transmission line segment, and a gain device having an input connected to said input transmission line segment and an output connected to said output transmission line segment;

(b) said N input transmission line segments are connected to form said first input transmission line;

(c) said N output transmission line segments are connected to form an output transmission line; and

(d) said third active device shunt connected to said first input transmission line is connected to one of said input transmission line segments.

8. The switch of claim 6, further comprising:

(a) a fifth active device shunt connected to said first input transmission line;

(b) a sixth active device shunt connected to said second input transmission line; and

(c) controls for said fifth and sixth active devices to switch between high and low impedance states with the state of said fifth active device the same as that of said third active device and the state of said sixth active device the same as that of said fourth active device.

9. The switch of claim 8, wherein:

(a) said first distributed parameter device is a distributed amplifier including N sections with each of said sections including an output transmission line segment, an input transmission line segment, and a gain device having an input connected to said input transmission line segment and an output connected to said output transmission line segment;

(b) said N input transmission line segments are connected to form said first input transmission line;

(c) said N output transmission line segments are connected to form an output transmission line; and

(d) said third active device is shunt connected to one of said N input transmission line segments and said fifth active device is shunt connected to a second of said N input transmission line segments.

10. The switch of claim 9, wherein:

(a) said input transmission line segments are microstrip transmission line segments;

(b) said output transmission line segments are microstrip transmission line segments;

(c) said gain devices are MESFETs; and

(d) each of said active devices is a MESFET.

11. The switch of claim 9, wherein:

(a) said input transmission line segments are microstrip transmission line segments;

(b) said output transmission line segments are microstrip transmission line segments;

(c) said gain devices are MESFETs;

(d) each of said first and second active devices is a MESFET; and

(e) each of said third, fourth, fifth, and sixth active devices is a plurality of series connected MESFETs.

12. A transmit/receive module, comprising:

(a) a first distributed transmit device with a first input transmission line and a first output transmission line;

(b) a second distributed transmit device with a second input transmission line and a second output transmission line, the output of said first transmit device directed to said second input transmission line;

(c) a first distributed receive device with a third input transmission line and a third output transmission line;

(d) a second distributed receive device with a fourth input transmission line and a fourth output transmission line, the output of said first receive device directed to said fourth input transmission line;

(e) a first active device having high and low impedance states in series with said first input transmission line;

(f) a second active device having high and low impedance states shunt connected to said first input transmission line;

(g) a third active device having high and low impedance states in series with said second input transmission line;

(h) a fourth active device having high and low impedance states shunt connected to said second input transmission line;

(i) a fifth active device having high and low impedance states in series with said third input transmission line;

(j) a sixth active device having high and low impedance states shunt connected to said third input transmission line;

(k) a seventh active device having high and low impedance states in series with said fourth input transmission line;

(l) an eighth active device having high and low impedance states shunt connected to said fourth input transmission line; and

(m) impedance controls for said active devices to switch between said high and low impedance states with said first, third, sixth, and eighth active devices in a first state and said second, fourth, fifth, and seventh active devices in a second state.

13. The module of claim 12, further comprising:

(a) a ninth active device shunt connected to said first input transmission line;

(b) a tenth active device shunt connected to said second input transmission line;

(c) a eleventh active device shunt connected to said third input transmission line;

(d) a twelfth active device shunt connected to said fourth input transmission line;

(e) controls for said ninth, thenth, eleventh, and twelfth active devices to switch between high and low impedance states with the state of said ninth and tenth active devices the same as that of said second and fourth active devices and the state of said eleventh and twelfth active devices the same as that of said sixth and seventh active devices.

14. The module of claim 13, wherein:

(a) said first transmit device is a distributed amplifier including N1 sections with each of said sections including an output transmission line segment, an input transmission line segment, and a gain device having an input connected to said input transmission line segment and an output connected to said output transmission line segment;

(b) said N1 input transmission line segments are connected to form said first input transmission line;

(c) N1 output transmission line segments are connected to form a first output transmission line;

(d) said second active device is shunt connected to one of said N1 input transmission line segments and said ninth active device is shunt connected to a second of said N1 input transmission line segments;

(e) said second transmit device is a distributed amplifier including N2 sections with each of said sections including an output transmission line segment, an input transmission line segment, and a gain device having an input connected to said input transmission line segment and an output connected to said output transmission line segment;

(f) said N2 input transmission line segments are connected to form said second input transmission line;

(g) said N2 output transmission line segments are connected to form a second output transmission line;

(h) said fourth active device is shunt connected to one of said N2 input transmission line segments and said tenth active device is shunt connected to a second of said N2 input transmission line segments;

(i) said first receive device is a distributed amplifier including N3 sections with each of said sections including an output transmission line segment, an input transmission line segment, and a gain device having an input connected to said input transmission line segment and an output connected to said output transmission line segment;

(j) said N3 input transmission line segments are connected to form said third input transmission line;

(k) said N3 output transmission line segments are connected to form a third output transmission line;

(l) said sixth active device is shunt connected to one of said N3 input transmission line segments and said eleventh active device is shunt connected to a second of said N3 input transmission line segments;

(m) said second receive device is a distributed amplifier including N4 sections with each of said sections including an output transmission line segment, an input transmission line segment, and a gain device having an input connected to said input transmission line segment and an output connected to said output transmission line segment;

(n) said N4 input transmission line segments are connected to form said fourth input transmission line;

(o) said N4 output transmission line segments are connected to form a fourth output transmission line; and

(p) said eighth active device is shunt connected to one of said N4 input transmission line segments and said twelfth active device is shunt connected to a second of said N4 input transmission line segments.

15. The module of claim 14, wherein:

(a) said input transmission line segments are microstrip transmission line segments;

(b) said output transmission line segments are microstrip transmission line segments;

(c) said gain devices are MESFETs; and

(d) each of said active devices is a MESFET.

16. The module of claim 14, wherein:

(a) said input transmission line segments are microstrip transmission line segments;

(b) said output transmission line segments are microstrip transmission line segments;

(c) said gain devices are MESFETs;

(d) each of said first, third, fifth, and seventh active devices is a MESFET; and

(e) each of said second, fourth, sixth, eighth, ninth, tenth, eleventh, and twelfth active devices is a plurality of series connected MESFETs.