Fluid index of refraction sensor

• US 5,083,018 A
• Filed: 07/11/1990
• Issued: 01/21/1992
• Est. Priority Date: 07/11/1990
• Status: Expired due to Term

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Rhyne, George W.
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): DAVENPORT, TERESA
• Application Number:
  US07/550,934
• Time in Patent Office: 559 Days
• Field of Search: 250/227.25, 250/577, 250/574, 356/133, 356/135, 356/136, 356/137
• US Class Current: 250/227.25
• CPC Class Codes: F02D 19/0634 Determining a density, viscosity, composition or concentration F02D19/087 takes precedence
• CPC Class Codes: F02D 19/084 Blends of gasoline and alcohols, e.g. E85
• CPC Class Codes: G01N 2021/4716 Using a ring of sensors, or a combination of diaphragm and sensors; Annular sensor
• CPC Class Codes: G01N 21/43 by measuring critical angle
• CPC Class Codes: Y02T 10/30 Use of alternative fuels, e.g. biofuels

Abstract

An index of refraction sensor having a photo detector array with variable sized elements is provided. The photo diode array comprises a plurality of diodes with varying area. The diodes farthest from a light emitting diode having a larger area than those closer to the light emitting diode. Preferably the diode area is designed so that each of the diodes produces approximately the same current output when exposed to light from the LED. Each diode in the photo diode array is sequentially powered and the photo diode outputs are summed together. A power input from a first diode in the array is coupled to a start input of a time measurement circuit. The summed output of the photo diode array is coupled to a stop input of the time measurement circuit. Elapsed time measured by the time measurement circuit is thus a function of reflected light edge location, and therefore a function of index of refraction of the fuel mixture.

Claims

1. An index of refraction sensor comprising:

a transparent block having upper and lower surfaces and an index of refraction n_w, wherein the upper surface is exposed to a material having an index of refraction n_f, wherein n_f is less than n_w ;

a light emitting device mounted on the lower surface; and

a first array of light detecting devices mounted on the lower surface parallel to the lower surface and spaced from the light emitting device by a predetermined separation, wherein light detecting devices nearest the light emitting device are smaller than light detecting devices farthest from the light emitting device.

2. The sensor of claim 1 wherein the light detecting devices are arc shaped and arranged concentrically around the light emitting device.

3. The sensor of claim 1 wherein the light emitting device comprises a light emitting diode and the light detecting device comprises a photo-diode array.

4. The sensor of claim 1 wherein the light detecting array and the light emitting device are formed monolithically on a semiconductor device.

5. An index of refraction sensor comprising:

a transparent block having upper and lower surfaces and an index of refraction n_w, wherein the upper surface is exposed to a material having an index of refraction n_f, wherein n_f is less than n_w ;

a light emitting device mounted on the lower surface; and

a first array of light detecting devices mounted on the lower surface and spaced from the light emitting device by a predetermined separation, wherein light detecting devices nearest the light emitting device are smaller than light detecting devices farthest from the light emitting device; and

a second detector array comprising a plurality of elements which correspond to elements in the first detector array and an opaque coating shading the second detector array.

6. An index of refraction sensor comprising:

a transparent block having upper and lower surfaces and an index of refraction n_w, wherein the upper surface is exposed to a material having an index of refraction n_f, wherein n_f is less than n_w ;

a light emitting device mounted on the lower surface; and

a first concentric array of arc shaped light detecting devices mounted on the lower surface and spaced from the light emitting device by a predetermined separation, wherein the light emitting device is at the center of the concentric array.

7. The sensor of claim 6 wherein the light emitting device comprises a light emitting diode and the light detecting device comprises a photo-diode array.

8. The sensor of claim 6 wherein the light detecting array and the light emitting device are formed monolithically on a semiconductor device.

9. An index of refraction sensor comprising:

a transparent block having upper and lower surfaces and an index of refraction n_w, wherein the upper surface is exposed to a material having an index of refraction n_f, wherein n_f is less than n_w ;

a light emitting device mounted on the lower surface; and

a first concentric array of arc shaped light detecting devices mounted on the lower surface and spaced from the light emitting device by a predetermined separation, wherein the light emitting device is at the center of the concentric array; and

a second detector array comprising a plurality of elements which correspond to elements in the first detector array and an opaque coating shading the second detector array.

10. The sensor of claim 9 further comprising a first means for scanning corresponding elements of the first and second detector arrays to sequentially couple each element of the first detector array to one input of a differential amplifier and each corresponding element of the second detector array to a second input of the differential amplifier.

11. The sensor of claim 9 wherein the differential amplifier comprises a transimpedance amplifier.

12. The sensor of claim 9 wherein the differential amplifier comprises a voltage amplifier and the sensor further comprises a second means for scanning which discharges the corresponding elements of the first and second detector arrays at a predetermined time after the corresponding elements have been coupled to the differential amplifier.