Modified cascode mixer circuit

• US 5,083,050 A
• Filed: 11/30/1990
• Issued: 01/21/1992
• Est. Priority Date: 11/30/1990
• Status: Expired due to Fees

• Current Assignee: Grumman Aerospace Corporation (Northrop Grumman Corporation)
• Original Assignee: Grumman Aerospace Corporation (Northrop Grumman Corporation)
• Inventors: Vasile, Carmine F.
• Primary Examiner(s): Callahan, Timothy P.
• Application Number:
  US07/620,035
• Time in Patent Office: 417 Days
• Field of Search: 307/529, 307/304, 307/219.1, 455/333, 328/15, 328/158, 333/100, 333/218
• US Class Current: 327/113
• CPC Class Codes: H03D 2200/0027 including arrangements for assuring the same gain in two paths
• CPC Class Codes: H03D 7/125 with field effect transistors
• CPC Class Codes: H03D 9/0675 using field effect transistors H03D9/0683 takes precedence

Abstract

In a conventional mixer circuit, in order to have high conversion gain, high input power is needed. For the mixer circuit of the present invention, by incorporating a modified cascode circuit whereby the input stage FET has a higher saturation current than the output stage FET, the same high conversion gain can be achieved. In addition, the present invention mixer circuit requires an input DC power that is considerably less than that needed for the conventional mixer circuit.

Claims

1. A mixer circuit, comprising:

a first FET having a first signal provided as input to its gate;

a second FET having as an input to its gate a second signal, the source of the second FET being grounded, the second FET capable of having a higher saturation current than the first FET to ensure that the first FET has high gain to provide for maximum voltage and current swings at its drain;

wherein the first FET has its source connected to the drain of the second FET; and

wherein the first signal is mixed with the second signal to provide an output high conversion gain signal at the drain of the first FET.

2. The mixer circuit of claim 1, wherein the first and second FETs are fabricated onto a semiconductor substrate with each FET having respective source, drain and gate regions;

and

wherein the second FET has a greater distance separating its drain and source regions on the semiconductor substrate than the first FET.

3. The mixer circuit of claim 1, wherein the first signal is a RF signal, the second signal is a local oscillator signal and the high conversion gain signal is an IF signal.

4. The mixer circuit of claim 1, wherein the first signal is a local oscillator signal, the second signal is a RF signal and the high conversion gain signal is an IF signal.

5. The mixer circuit of claim 1, further comprising:

a first filter provided at the gate of the first FET for filtering the first signal;

a second filter provided at the gate of the second FET for filtering the second signal; and

a third filter provided at the drain of the first FET for filtering the output high conversion gain signal.

6. A mixer circuit comprising:

a cascode circuit having an output stage FET series connected at its source to the drain of an input stage FET, the input stage FET having a saturation current level greater than that of the output stage FET;

wherein a first signal is provided to the output stage FET and a second signal is provided to the input stage FET; and

wherein the first and second signals are combined in the cascode circuit such that a high conversion gain signal is output from the mixer circuit.

7. The mixer circuit of claim 6, wherein the mixer circuit is fabricated onto a semiconductor substrate with each FET having respective source, drain and gate regions;

and

wherein the input stage FET has a distance separating its source and drain regions which is greater than the distance separating the source and drain regions of the output stage FET.

8. The mixer circuit of claim 6, further comprising:

a first filter for filtering the first signal;

a second filter for filtering the second signal; and

a third filter for filtering the output high conversion gain signal.

9. The mixer circuit of claim 6, wherein the first signal is a RF signal, the second signal is a local oscillator signal and the high conversion gain signal is an IF signal.

10. The mixer circuit of claim 6, wherein the first signal is a local oscillator signal, the second signal is a RF signal and the high conversion gain signal is an IF signal.