×

Method of using offset gated gap-cell thin film device as a photosensor

  • US 5,083,175 A
  • Filed: 09/21/1990
  • Issued: 01/21/1992
  • Est. Priority Date: 09/21/1990
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of utilizing a thin film device as a photosensor comprising the steps ofproviding a substrate upon which is deposited a charge transport layer, first and second injecting electrodes in electrical contact with said charge transport layer and being laterally spaced from one another, a gate electrode spaced normally from said first and second injecting electrodes and located opposite said first injecting electrode and laterally offset from said second injecting electrode, and a gate dielectric layer separating said gate electrode from said first and second injecting electrodes and said charge transport layer, and being characterized byapplying a first electrical bias of a first magnitude to said first injecting electrode,applying a second electrical bias of a second magnitude to said second injecting electrode,inhibiting charge injection from said first injecting electrode by applying a third electrical bias to said gate electrode of a third magnitude,illuminating said charge transport layer, andselectively operating said photosensor in one of two modes of operation, said modes being a unity gain mode and a variable gain mode,wherein said unity gain mode is achieved by causing said second magnitude to be greater than said first magnitude and said variable gain mode is achieved by causing said second magnitude to be less than said first magnitude.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×