Method of using offset gated gap-cell thin film device as a photosensor

• US 5,083,175 A
• Filed: 09/21/1990
• Issued: 01/21/1992
• Est. Priority Date: 09/21/1990
• Status: Expired due to Fees

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Thompson, Malcolm J., Tuan, Hsing C., Hack, Michael
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US07/586,462
• Time in Patent Office: 487 Days
• Field of Search: 357/30 K, 357/30 H, 357/5 G, 357/5 I, 357/5 Q, 357/5 R, 357/32, 357/2, 357/58, 357/55, 357/59 C, 357/59 D, 357/23.7
• US Class Current: 257/53
• CPC Class Codes: H01L 31/113 being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
• CPC Class Codes: H01L 31/1136 the device being a metal-insulator-semiconductor field-effect transistor

Abstract

A method of utilizing a thin film device as a photosensor. The thin film device comprises a substrate upon which is deposited a charge transport layer, first and second injecting electrodes in low electrical resistance contact with the charge transport layer, the injecting electrodes being laterally spaced from one another, a gate electrode spaced normally from the first and second injecting electrodes and located opposite the first injecting electrode, for controlling injection therefrom, and laterally offset from the second injecting electrode, and a gate dielectric layer separating the gate electrode from the first and second injecting electrodes and the charge transport layer. The method of utilization comprises applying a first electrical bias of a first magnitude to the first injecting electrode, applying a second electrical bias of a second magnitude to the second injecting electrode, inhibiting charge injection from the first injecting electrode by applying a third electrode bias to the gate electrode of a third magnitude, and illuminating the charge transport layer. The photosensor may be selectively operated in a unity gain mode or in a variable gain mode, wherein said unity gain mode is achieved by causing the second magnitude to be greater than the first magnitude and the variable gain mode is achieved by causing the second magnitude to be less than the first magnitude.

Claims

1. A method of utilizing a thin film device as a photosensor comprising the steps of

providing a substrate upon which is deposited a charge transport layer, first and second injecting electrodes in electrical contact with said charge transport layer and being laterally spaced from one another, a gate electrode spaced normally from said first and second injecting electrodes and located opposite said first injecting electrode and laterally offset from said second injecting electrode, and a gate dielectric layer separating said gate electrode from said first and second injecting electrodes and said charge transport layer, and being characterized by

applying a first electrical bias of a first magnitude to said first injecting electrode,

applying a second electrical bias of a second magnitude to said second injecting electrode,

inhibiting charge injection from said first injecting electrode by applying a third electrical bias to said gate electrode of a third magnitude,

illuminating said charge transport layer, and

selectively operating said photosensor in one of two modes of operation, said modes being a unity gain mode and a variable gain mode,

wherein said unity gain mode is achieved by causing said second magnitude to be greater than said first magnitude and said variable gain mode is achieved by causing said second magnitude to be less than said first magnitude.

2. The method as defined in claim 1 wherein said step of inhibiting charge injection comprises causing said third magnitude to be less than or equal to said first magnitude.

3. The method as defined in claim 1 wherein said step of inhibiting charge injection comprises causing the difference between said third magnitude and said first magnitude to be less than a threshold voltage of said device.

4. The method as defined in claim 1 wherein said step of illuminating takes place over substantially the full lateral distance between said first injecting electrode and said second injecting electrode.

5. The method as defined in claim 4 wherein said step of illuminating takes place through said substrate.

6. The thin film photosensor as defined in claim 4 wherein said step of illuminating takes place through said gate electrode.

7. The thin film photosensor as defined in claim 4 wherein said step of illuminating takes place through said substrate and said gate electrode.

8. The method as defined in claim 1 wherein operating said photosensor in said unity gain mode results in a dynamic range greater than 10³ and a gain of greater than 10.

9. A thin film photosensor as defined in claim 1 wherein operating said photosensor in said unity gain mode results in a dynamic range greater than 10⁵ and a dark current of about 10^-13 amps.

10. A method of utilizing a thin film device as a photosensor comprising the steps of

providing a substrate upon which is deposited a charge transport layer, first and second injecting electrodes in electrical contact with said charge transport layer and being laterally spaced from one another, a gate electrode spaced normally from said first and second injecting electrodes and located opposite said first injecting electrode and laterally offset from said second injecting electrode, and a gate dielectric layer separating said gate electrode from said first and second injecting electrodes and said charge transport layer, and being characterized by

applying a first electrical bias of a first magnitude to said first injecting electrode,

applying a second electrical bias of a second magnitude to said second injecting electrode,

enhancing charge injection from said first injecting electrode by applying a third electrical bias to said gate electrode of a third magnitude,

illuminating said charge transport layer, and

operating said photosensor in a high gain mode regardless of the difference between said first and second magnitudes.

11. The method as defined in claim 10 wherein said step of illuminating takes place over substantially the full lateral distance between said first injecting electrode and said second injecting electrode.

12. The method as defined in claim 10 wherein said step of illuminating takes place through said substrate.

13. The thin film photosensor as defined in claim 10 wherein said step of illuminating takes place through said gate electrode.

14. The thin film photosensor as defined in claim 10 wherein said step of illuminating takes place through said substrate and said gate electrode.