Semiconductor light emitting system

• US 5,084,895 A
• Filed: 02/23/1990
• Issued: 01/28/1992
• Est. Priority Date: 02/24/1989
• Status: Expired due to Term

• Current Assignee: Nippon Telegraph and Telephone Corporation
• Original Assignee: Nippon Telegraph and Telephone Corporation
• Inventors: Sawada, Renshi, Shimada, Junichi
• Primary Examiner(s): Davie, James W.
• Application Number:
  US07/483,853
• Time in Patent Office: 704 Days
• Field of Search: 372/108, 372/50, 357/17
• US Class Current: 372/50.23
• CPC Class Codes: G02B 6/42 Coupling light guides with opto-electronic elements
• CPC Class Codes: G02B 6/4204 the coupling comprising intermediate optical elements, e.g. lenses, holograms encapsulated active devices H01S5/02208, H01L33/52
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01S 3/005 Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping shaping laser beam for working metal or other materials B23K26/06; optical elements, systems or apparatus in general G02B
• CPC Class Codes: H01S 5/005 Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping H01S5/026, H01S5/18388 take precedence
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/4025 Array arrangements, e.g. constituted by discrete laser diodes or laser bar H01S5/42 takes precedence
• CPC Class Codes: H01S 5/4031 Edge-emitting structures

Abstract

A semiconductor light emitting element, a laser or a light emitting diode which is deposited on a first area of a semiconductor substrate, which also carries a microlens for focusing or diverging an output beam of the light emitting element on a second area of the substrate. Both the light emitting element and the microlens are deposited on a substrate through a photolithoetching process, and an alignment of an optical axis of the light emitting element and an optical axis of the microlens is accomplished in the steps of producing a light emitting semiconductor system. Thus, a semiconductor light emitting system which functions not only to generate light but also to focus or diverge the light, and is small in size and light in weight, can be obtained.

Claims

1. A semiconductor light emitting system, comprising:

a semiconductor substrate having a first area and a second area, said second area having a main plane;

a semiconductor light emitting element disposed on said first area of said semiconductor substrate, said semiconductor light emitting element having a laminated semiconductor body which includes an active layer, a pair of clad layers sandwiching said active layer, and an output plane perpendicular to said main plane of said laminated semiconductor body for emitting a light beam;

a microlens spaced from said laminated semiconductor body and being disposed on said second area of said semiconductor substrate for focusing said light beam output from said output plane of said laminated semiconductor body, said microlens having a first surface which is substantially planar and which is substantially parallel to said output plane, said first surface of said microlens being spaced from said output plane of said laminated semiconductor body by a predetermined gap distance;

said microlens being composed of transparent material;

said microlens having a second surface for emitting said light beam supplied to said first surface from said output plane;

said first surface and said second surface of said microlens being substantially perpendicular to said main plane of said laminated semiconductor body; and

a pair of electrode layers attached on said semiconductor substrate and said semiconductor light emitting element, respectively, for energizing said semiconductor light emitting element.

2. A semiconductor light emitting device according to claim 1, wherein said microlens is a convex lens having first and second lens planes, wherein said second lens plane is convex.

3. A semiconductor light emitting device according to claim 1, wherein said microlens is a concave lens having first and second lens planes, wherein said second plane is concave.

4. A semiconductor light emitting device according to claim 2, wherein said microlens has a varying refractive index which varies with respect to distance along a thickness direction extending perpendicularly from said main plane such that the refractive index of said microlens at a center portion thereof along said thickness direction is higher than that at either end portion of said microlens along said thickness direction.

5. A semiconductor light emitting device according to claim 3, wherein said microlens has a varying refractive index which varies with respect to distance along a thickness direction extending perpendicularly from said main plane such that the refractive index of said microlens at a center portion thereof along said thickness direction is lower than that at either end portion of said microlens along said thickness direction.

6. A semiconductor light emitting device according to claim 1, wherein said microlens has a first convex lens and a second concave lens located sequentially along path of light beam of the light emitting element.

7. A semiconductor light emitting device according to claim 6, wherein said microlens has a varying refractive index which varies with respect to distance along a thickness direction extending perpendicularly from said main plane such that the refractive index of said microlens at a center portion thereof along said thickness direction is higher than that at either end portion of said microlens along said thickness direction, and said second concave lens has a varying refractive index which varies with respect to distance along a thickness direction extending perpendicularly from said main plane such that the refractive index of said microlens at a center portion thereof along said thickness direction is smaller than that at either end portion of said microlens along said thickness direction.

8. A semiconductor light emitting device according to claim 1, wherein said microlens comprises a first convex lens and a second convex lens, said first convex lens having said first surface as an input plane and said second convex lens having input surface which is substantially parallel to said output plane of said semiconductor light emitting element, said first convex lens having a curved output surface, and said second convex lens having a curved output surface;

and said first convex lens and said second convex lens each having a varying refractive index which varies with respect to distance along a thickness direction extending perpendicularly from said main plane such that the refractive index of said second convex lens is higher than that at either end portion of said microlens along said thickness direction.

9. A semiconductor light emitting system according to claim 1, wherein said semiconductor light emitting element is a semiconductor laser.

10. A semiconductor light emitting system according to claim 1, wherein said semiconductor light emitting element is a light emitting diode.

11. A semiconductor light emitting system according to claim 1, wherein length of said gap space is in the range between 0.4 μ

m and 1.5 μ

m.

12. A semiconductor light emitting system according to claim 1, wherein thickness of said second area of said semiconductor substrate is smaller than that of said first area of said semiconductor substrate, having a step at border of said first area and said second area.

13. A semiconductor light emitting system according to claim 1, wherein material of said microlens is one selected from S_i O₂, S_i --N--O, and polyimide resin.

15. A semiconductor light emitting system according to claim 1, wherein said semiconductor substrate is N-type semiconductor, first clad layer is N-type semiconductor, an active layer is I-type semiconductor, and second clad layer is P-type semiconductor.

14. An array of semiconductor light emitting systems, comprising:

a semiconductor substrate having a first area and a second area, said second area having a main plane;

a plurality of semiconductor light emitting elements, each said semiconductor light emitting element being disposed on said first area of said semiconductor substrate, each said semiconductor light emitting element having a laminated semiconductor body which includes an active layer, a pair of clad layers sandwiching said active layer, and an output plane perpendicular to said main plane of said laminated semiconductor body for emitting a light beam;

a plurality of microlenses, each said microlens being spaced from said laminated semiconductor body and being disposed on said second area of said semiconductor substrate for focusing said light beam output from said output plane of said laminated semiconductor body, each said microlens having a first surface which is substantially planar and which is substantially parallel to said output plane, said first surface of said microlens being spaced from said output plane of said laminated semiconductor body by a predetermined gap distance;

each said microlens being composed of transparent material; and

said microlenses having respective focal lengths which are different from one another;

each said microlens having a second surface for emitting said light beam supplied to said first surface from said output plane;

said first surface and said second surface of said microlens being substantially perpendicular to said main plane of said laminated semiconductor body; and

a pair of electrode layers attached on said semiconductor substrate and each of said plurality of semiconductor light emitting elements, respectively, for energizing respective ones of said plurality of semiconductor light emitting elements.