Optical filter device

• US 5,084,897 A
• Filed: 04/27/1989
• Issued: 01/28/1992
• Est. Priority Date: 11/26/1986
• Status: Expired due to Fees

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Numai, Takahiro
• Primary Examiner(s): LaRoche, Eugene R.
• Assistant Examiner(s): Lester, Evelyn A.
• Application Number:
  US07/343,553
• Time in Patent Office: 1,006 Days
• Field of Search: 372/96, 372/50, 372/47, 372/48, 372/49, 350/353
• US Class Current: 372/96
• CPC Class Codes: H01S 5/06256 with DBR-structure
• CPC Class Codes: H01S 5/12 the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18
• CPC Class Codes: H01S 5/16 Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface H01S5/14 takes precedence
• CPC Class Codes: H01S 5/227 Buried mesa structure ; Striped active layer
• CPC Class Codes: H01S 5/2277 double channel planar buried heterostructure [DCPBH] laser
• CPC Class Codes: H01S 5/5045 the arrangement having a frequency filtering function

Abstract

An optical filter device comprises a distributed feedback region and an active region which are arranged in series and coupled optically, and anti-reflection structures which are positioned at both ends of the distributed feedback region and active region thus coupled to be in contact therewith so that a predetermined wavelength of an optical signal is selected from optical signals of, for instance, as much as 60 channels so that a wavelength selection can be performed in a narrow bandwidth of less than approximately 1 to 2 Å and in a wide tuning range of an optical signal wavelength in accordance with a carrier injection thereinto.

Claims

1. An optical filter device comprising:

an optical amplifying region provided on a semiconductor substrate for amplifying an input light beam to produce an amplified light beam, said optical amplifying region including an active layer;

a distributed feedback region provided on said semiconductor substrate, said distributed feedback region including a λ

/4 shift structure and no active layer; and

anti-reflection structures;

wherein said optical amplifying region and said distributed feedback region include a common optical guide layer, and are arranged in series to be optically coupled by said common optical guide layer, and one of said anti-reflection structures is positioned at each end plane of the series arrangement of said optical amplifying region and said distributed feedback region thus coupled to be in contact therewith, said distributed feedback region having no gain relative to said amplified light beam and filtering said amplified light beam to produce a selected wavelength component of said amplified light beam.

2. An optical filter device according to claim 1, wherein said optical amplifying region and said distributed feedback region include first and second common electrodes, said first common electrode being partially separated by a groove.

3. An optical filter device according to claim 1, wherein said optical amplifying region and said distributed feedback region are electrically controllable independently of each other.

4. An optical filter device according to claim 3, wherein said optical amplifying region and said distributed feedback region are electrically separated from each other, each of said optical amplifying region and said distributed feedback region having separate electrodes.