Barrier materials useful for packaging

• US 5,085,904 A
• Filed: 04/20/1990
• Issued: 02/04/1992
• Est. Priority Date: 04/20/1990
• Status: Expired due to Term

• Current Assignee: E. I. du Pont de Nemours and Company (Corteva, Inc.)
• Original Assignee: E. I. du Pont de Nemours and Company (Corteva, Inc.)
• Inventors: Jackson, Scott C., Deak, Gedeon I.
• Primary Examiner(s): Seidleck, James J.
• Application Number:
  US07/513,354
• Time in Patent Office: 655 Days
• Field of Search: 428/446, 428/448, 428/479.4, 428/480, 428/35.7, 428/35.9, 428/36.6, 427/51
• US Class Current: 428/35.7
• CPC Class Codes: B32B 37/12 characterised by using adhesives
• CPC Class Codes: B32B 38/00 Ancillary operations in connection with laminating processes
• CPC Class Codes: C23C 14/10 Glass or silica
• CPC Class Codes: Y10T 428/1352 Polymer or resin containing [i.e., natural or synthetic]
• CPC Class Codes: Y10T 428/1359 Three or more layers [continuous layer]
• CPC Class Codes: Y10T 428/1379 Contains vapor or gas barrier, polymer derived from vinyl chloride or vinylidene chloride, or polymer containing a vinyl alcohol unit
• CPC Class Codes: Y10T 428/31725 Of polyamide
• CPC Class Codes: Y10T 428/31786 Of polyester [e.g., alkyd, etc.]

Abstract

Multilayer structures suitable for food packaging is provided, wherein barrier layers of SiO and SiO₂ are successively vacuum deposited on a resin substrate such as PET film. This combination of silicon oxide layers provides economical, color-free, microwaveable packaging. Barrier properties of the packaging after retorting can be improved by incorporation of a dopant of metallic material in the SiO₂ layer.

Claims

1. A multilayer structure comprising a resin substrate of polyester or polyamide, a vacuum deposited layer of SiO of about 10 to 75 nm thickness on said substrate, and a vacuum deposited layer of SiO₂ of at least about 20 nm thickness on said SiO layer.

2. The multilayer structure of claim 1 wherein the thickness of said SiO layer is about 10 to 50 nm and the thickness of said SiO₂ layer is about 50 to 350 nm.

3. The multilayer structure of claim 1 wherein said SiO layer has an atomic ratio of oxygen to silicon in said layer of from 0.6:

1 to 1.4;

1.

4. The multilayer structure of claim 1 wherein said SiO₂ layer contains an effective amount of dopant to improve its barrier properties upon retorting of said multilayer structure.

5. The multilayer structure of claim 4 wherein said dopant is a metallic material selected from the group consisting of Ti, Zr, Zn, Al, In, Pb, W, Cu, Sn, Cr, Fe, Mn, Sb, Co, Ba, and Mg, and mixtures thereof, and the amount thereof present in said SiO₂ layer is about 0.5 to 30% based on the total weight of the layer.

6. The multilayer structure of claim 1 wherein said dopant is a metallic material is selected from the group consisting of Ti, Zr, Zn, Al, In, Pb, W, Cu, Sn, Cr, Fe, Mn, Sb, and Co.

7. The multilayer structure of claim 4 wherein said dopant is a metallic material is selected from the group consisting of Sn and Cu.

8. The multilayer structure of claim 1 and additionally a protective plastic layer on said SiO₂ layer.

9. The multilayer structure of claim 1 having an oxygen transmission rate (OTR) of less than about 7 ccm/² Day Atm.

10. The multilayer structure of claim 1 having an oxygen transmission rate (OTR) of less than about 3 cc/m² Day Atm.

11. The multilayer structure of claim 10 wherein said oxygen transmission rate is present both before and after retorting.

12. The multilayer structure of claim 1 wherein said resin substrate is a film having a surface roughtness of less than about 50 nm.

13. The multilayer structure of claim 12 wherein said film has a surface roughness of no greater than about 10 nm.

14. The multilayer structure of claim 1 in the form of a film.

15. The multilayer structure of claim 1 in the form of a container.

16. A process for forming a barrier structure from a resin substrate of polyester or polyamide polymer comprising vacuum depositing a layer of SiO of about 10 to 75 nm thickness on said resin substrate and vacuum depositing a layer of SiO₂ of at least about 20 nm thickness on said SiO layer, the resultant multilayer structure having an oxygen transmission rate (OTR) of less than about 7 cc/m² Day Atm.

17. The process of claim 16 wherein metal dopant is vacuum deposited along with the vacuum deposition of said layer of SiO₂ so that said metal dopant is incorporated in said SiO₂ layer in effective amount to provide said OTR after retorting of said structure.

18. The process of claim 16 wherein said resin substrate is in the form of a film.

19. The process of claim 16 wherein said resin substrate is in the form of a container.