Dielectric composition
First Claim
Patent Images
1. A composition for forming a multilayer ceramic device having a thin dielectric layer with lower porosity and having a dissipation factor of 2.5% of less, an insulation resistance of 1000 ohm-Farads or more at 25°
- C. and 100 ohm-Farads or more at 125°
C. and a temperature coefficient of capacitance of ±
15% deviation or less within a temperature range of -55°
C. to +125°
C. and consisting essentially of an admixture of;
(a) 97 to 99 wt % of a major component ceramic powder particle; and
(b) 1 to 3 wt % of minor component additives selected from the group consisting essentially of the oxides of cerium, neodymium, samarium, lanthanum, niobium, tantalum, manganese, cobalt, nickel, magnesium or mixtures thereof, provided that, a primary cation ratio, CR, equals A/B and ranges from more than 0 to about 0.30 whereinA is a sum of atom % for a cation selected from Ce, Nd, Sm, La or mixtures thereof; and
B is a sum of atom % for a cation selected from Nb, Ta, Mn, Co, Ni, Mg or mixtures thereof and, further provided, a secondary cation ratio, BR, equals B1/(B2+0.5 Mn) and ranges from 1.8 to 2.2 whereinB1 is a sum of atom % of an electron donor selected from Nb, Ta or mixtures thereof; and
B2 is a sum of atom % for an electron acceptor selected from Co, Ni, Mg or mixtures thereof Mn is atom % of manganese.
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Abstract
A dielectric ceramic powder composition for forming multilayer ceramic devices having thin dielectric layers with low porosity and having a dissipation factor which meets or exceeds X7R specifications, and consisting essentially of an admixture of a major component ceramic powder particle and minor component additives the amounts of which are controlled within certain predetermined ratios.
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Citations
6 Claims
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1. A composition for forming a multilayer ceramic device having a thin dielectric layer with lower porosity and having a dissipation factor of 2.5% of less, an insulation resistance of 1000 ohm-Farads or more at 25°
- C. and 100 ohm-Farads or more at 125°
C. and a temperature coefficient of capacitance of ±
15% deviation or less within a temperature range of -55°
C. to +125°
C. and consisting essentially of an admixture of;(a) 97 to 99 wt % of a major component ceramic powder particle; and (b) 1 to 3 wt % of minor component additives selected from the group consisting essentially of the oxides of cerium, neodymium, samarium, lanthanum, niobium, tantalum, manganese, cobalt, nickel, magnesium or mixtures thereof, provided that, a primary cation ratio, CR, equals A/B and ranges from more than 0 to about 0.30 wherein A is a sum of atom % for a cation selected from Ce, Nd, Sm, La or mixtures thereof; and B is a sum of atom % for a cation selected from Nb, Ta, Mn, Co, Ni, Mg or mixtures thereof and, further provided, a secondary cation ratio, BR, equals B1/(B2+0.5 Mn) and ranges from 1.8 to 2.2 wherein B1 is a sum of atom % of an electron donor selected from Nb, Ta or mixtures thereof; and B2 is a sum of atom % for an electron acceptor selected from Co, Ni, Mg or mixtures thereof Mn is atom % of manganese. - View Dependent Claims (2, 3, 5, 6)
- C. and 100 ohm-Farads or more at 125°
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4. A composition for forming a densified dielectric body in a thin dielectric layer with low porosity and having a dissipation factor of 2.5% or less, an insulation resistance of 1000 ohm-Farads or more at 25°
- C. and 100 ohm-Farads or more at 125°
C. and a temperature coefficient of capacitance of ±
15% or less within a temperature range of -55°
C. to +125°
C. and consisting essentially of;(a) 98 to 99 wt % of a high purity barium titanate; (b) 1 to 2 wt % of minor component additives selected from the group consisting of the oxides of cerium neodymium, niobium, manganese, nickel and mixtures thereof, provided that, a primary cation ratio, CR, equals A/B and ranges from 0.1 to 0.2 wherein A is Ce cation or Nd cation in atom %; and B is Nb, Mn or Ni cations in atom % and further provided that a secondary cation ratio, BR, equals B1/(B2+0.5 Mn) and ranges from 1.9 to 2.1 wherein B1 is Nb cation in atom % and B2 is Ni cation in atom %.
- C. and 100 ohm-Farads or more at 125°
Specification