Method of stacking semiconductor substrates for fabrication of three-dimensional integrated circuit

• US 5,087,585 A
• Filed: 07/11/1990
• Issued: 02/11/1992
• Est. Priority Date: 07/11/1989
• Status: Expired due to Term

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Hayashi, Yoshihiro
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US07/551,095
• Time in Patent Office: 580 Days
• Field of Search: 437/51, 437/915, 437/974, 437/180, 148/DIG. 135
• US Class Current: 438/155
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/6834 used to protect an active side of a device or wafer
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06565 the devices having the same size and there being no auxiliary carrier between the devices
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/19041 being a capacitor

Abstract

A semiconductor substrate stacking method comprises the steps of preparing first and second thin film devices each in the form of a thin film having a connection electrode formed on an upper surface thereof and a connection electrode formed on an undersurface thereof, each of the thin film devices being bonded at its upper surface thereof to a support plate by adhesive. The first thin film device is stacked and bonded onto a base substrate having a device formed thereon and a connection electrode formed on the device, in such a manner that the device formed on the base substrate faces the undersurface of the first thin film device and the connection electrode formed on the device formed on the base substrate is in alignment with and in contact with the undersurface connection electrode formed on the first thin film device. The support plate and the adhesive of the first thin film device are removed so that the upper surface of the first thin film device and the upper surface connection electrode formed on the upper surface of the first thin film device are exposed. Similarly, the second thin film device is stacked and bonded onto the first thin film device stacked on the base substrate and the support plate and the adhesive of the second thin film device is removed.

Claims

1. A semiconductor substrate stacking method comprising the steps of:

preparing first and second thin film devices each in the form of a thin film having an upper surface connection electrode formed on an upper surface thereof and an undersurface connection electrode formed on an undersurface thereof, each of the thin film devices being bonded at its upper surface thereof to a support plate by adhesive;

stacking and bonding the first thin film device onto a base substrate having a device formed thereon and a connection electrode formed on the device, in such a manner that the device formed on the base substrate faces the undersurface of the first thin film device and the connection electrode formed on the device formed on the base substrate is in alignment with and in contact with the undersurface connection electrode formed on the first thin film device;

removing the support plate and the adhesive of the first thin film device so that the upper surface of the first thin film device and the upper surface connection electrode formed on the the upper surface of the first thin film device are exposed;

stacking and bonding the second thin film device onto the first thin film device stacked on the base substrate, in such a manner that the device formed on the first thin film device faces the undersurface of the second thin film device and the upper surface connection electrode formed on the device formed on the first thin film device is in alignment with and in contact with the undersurface connection electrode formed on the second thin film device; and

removing the support plate and the adhesive of the second thin film device so that the upper surface of the second thin film device and the upper surface connection electrode formed on the the upper surface of the second thin film device are exposed.

2. A semiconductor substrate stacking method claimed in claim 1 wherein the preparation of each of the first and second thin film devices includes the steps of:

forming a device on a semiconductor substrate;

forming the upper surface connection electrode on an upper surface of the device formed on the semiconductor substrate;

bonding the support plate, by adhesive, on the upper surface of the device formed on the semiconductor substrate and the upper surface connection electrode formed on the upper surface of the device formed on the semiconductor substrate;

thinning the semiconductor substrate by removing the semiconductor substrate from an undersurface of the semiconductor substrate so as to form the thin film device composed of a remaining portion of the substrate in which the device is formed;

forming an undersurface insulative layer on an undersurface of the thin film device; and

forming an opening in the undersurface insulative layer; and

forming the undersurface connection electrode on the undersurface of the thin film device exposed within the opening.

3. A semiconductor substrate stacking method claimed in claim 2 wherein the upper surface connection electrode formed on the upper surface of the device formed on the semiconductor substrate is formed of a refractory metal, and the undersurface connection electrode formed on the undersurface of the thin film device is formed of a non-refractory metal.

4. A semiconductor substrate stacking method claimed in claim 3 wherein the opening formed in the undersurface insulative layer formed on the undersurface of the thin film device is larger in size than a corresponding upper surface connection electrode, so that the nonrefractory metal filled in the opening forms a metal pool.

5. A semiconductor substrate stacking method claimed in claim 4 wherein the bonding of the first thin film device onto the base substrate is performed by heating the first thin film device and the base substrate to a temperature higher than a melting point of the non-refractory metal.

6. A semiconductor substrate stacking method as claimed in claim 4 wherein the removal of the support plate and the adhesive of the first thin film device is performed by etch-removing the support plate and then chemically removing the adhesive.