Plasma etching method

• US 5,089,083 A
• Filed: 04/20/1990
• Issued: 02/18/1992
• Est. Priority Date: 04/25/1989
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Kojima, Hiroshi, Arai, Izumi, Tahara, Yoshifumi
• Primary Examiner(s): Simmons, David A.
• Assistant Examiner(s): DANG, THI D
• Application Number:
  US07/512,151
• Time in Patent Office: 669 Days
• Field of Search: 156/643, 156/646, 156/657, 156/662, 156/345, 204/192.37, 204/192.35
• US Class Current: 438/729
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/32137 of silicon-containing layers

Abstract

A plasma etching method including the steps of mounting an object to be processed in a region formed between one electrode and an other electrode, introducing an etching gas into the region, setting an area of the contact surface of the other electrode, which is in contact with the etching gas, to a predetermined value in accordance with a predetermined selection ratio used in etching the object, generating plasma of the etching gas by applying a predetermined electric power between the electrodes after setting the area of the contact surface of the other electrode, which is in contact with the etching gas, to the predetermined value, and etching the object by the plasma.

Claims

1. A plasma etching method, comprising the steps of:

mounting an object to be processed, having at least a material to be etched and a primary material, in a region formed between one electrode and an other electrode;

introducing an etching gas into said region;

setting an area of the contact surface of said other electrode, which is in contact with said etching gas, to a predetermined value in accordance with a predetermined selection ratio used in etching said object to be processed, wherein said selection ratio denotes a ratio of the etching rate of said material to be etched to the etching rate of said primary material beneath said material to be etched;

generating plasma of said etching gas by applying a predetermined electric power between said electrodes after setting the area of the contact surface of said other electrode, which is in contact with said etching gas, to the predetermined value; and

etching said object to be processed by said plasma;

wherein the material to be etched is a SiO₂ layer and the primary material is a Si layer.

2. The plasma etching method according to claim 1, wherein the predetermined area of the contact surface of said other electrode, which is in contact with said etching gas, is covered with an insulating member, thereby setting the area of said contact surface to the predetermined value.

3. The plasma etching method according to claim 2, wherein said insulating member is an insulating shield ring having a diameter selected in dependence on the material to be etched.

4. The plasma etching method according to claim 1, wherein a physical function, in which an ion whose gas molecular is decomposed in plasma, collides with the etching material, is used for etching said object to be processed.

5. A plasma etching method, comprising the steps of:

mounting an object to be processed, having at least a material to be etched and a primary material, in a region formed between one electrode and an other electrode;

introducing an etching gas into said region;

setting an area of the contact surface of said other electrode, which is in contact with said etching gas, to a predetermined value in accordance with a predetermined selection ratio used in etching said object to be processed, wherein said selection ratio denotes a ratio of the etching rate of said material to be etched to the etching rate of said primary material beneath said material to be etched;

generating plasma of said etching gas by applying a predetermined electric power between said electrodes after setting the area of the contact surface of said other electrode, which is in contact with said etching gas, to the predetermined value; and

etching said object to be processed by said plasma;

wherein the material to be etched is a silicon layer and the primary material is a SiO₂ layer.

6. The plasma etching method according to claim 5, wherein the predetermined area of the contact surface of said other electrode, which is in contact with said etching gas, is covered with an insulating member, thereby setting the area of said contact surface to the predetermined value.

7. The plasma etching method according to claim 6, wherein said insulating member is an insulating shield ring having a diameter selected in dependence on the material to be etched.

8. The plasma etching method according to claim 5, wherein a physical function, in which an ion whose gas molecular is decomposed in plasma, collides with the etching material, is used for etching said object to be processed.