Quantum well device with control of spontaneous photon emission, and method of manufacturing same
First Claim
1. A light-emitting semiconductor device with improved spontaneous photon emission, comprising:
- a quantum well capable of emitting light of an optical emission wavelength, a thickness of said quantum well being much less than said optical wavelength; and
a single reflector spaced from said quantum well a distance substantially equal to one-fourth said optical emission wavelength, said reflector having means for causing phase shift of said emission wavelength, to control spontaneous photon emission of said quantum well.
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Abstract
In the present invention, spontaneous photon emission intensity in a semiconductor quantum well is strongly influenced by a highly reflecting interface, with the quantum well to interface spacing being less than the optical emission wavelength of the quantum well. An enhancement/inhibition ratio on the order of 10 is possible according to the present invention using a single reflector, and enhancement/inhibition ratios on the order of 1000 are possible when two reflectors are used in the quantum well light-emitting diode structures. In addition, according to the present invention, the gain, directionality, and efficiency of a vertical cavity surface-emitting laser can also be greatly improved. A method of making a device according to the present invention is also presented.
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Citations
14 Claims
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1. A light-emitting semiconductor device with improved spontaneous photon emission, comprising:
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a quantum well capable of emitting light of an optical emission wavelength, a thickness of said quantum well being much less than said optical wavelength; and a single reflector spaced from said quantum well a distance substantially equal to one-fourth said optical emission wavelength, said reflector having means for causing phase shift of said emission wavelength, to control spontaneous photon emission of said quantum well. - View Dependent Claims (6, 7, 8)
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2. A light-emitting semiconductor device with improved spontaneous photon emission, comprising:
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a quantum well capable of emitting light of an optical emission wavelength, a thickness of said quantum well being much less than said optical wavelength; a first reflector spaced from said quantum well a distance substantially equal to said optical emission wavelength; a second reflector spaced from said quantum well a distance substantially equal to one-fourth said optical emission wavelength, whereby said quantum well is intermediate said first and second reflectors, and wherein a reflectivity of said first reflector is less than a reflectivity of said second reflector; and said second reflector having means for causing phase shift of said emission wavelength to control spontaneous photon emission of said quantum well. - View Dependent Claims (3, 4, 5, 9, 10, 11)
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12. A light-emitting semiconductor device with improved spontaneous photon emission, comprising:
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a quantum well capable of emitting light of an optical emission wavelength, a thickness of said quantum well being much less than said optical wavelength; and a single reflector having a reflectivity of at most 0.998 and spaced from said quantum well a distance substantially equal to one-fourth said optical emission wavelength; said quantum well being placed at an anti-node or node of an electromagnetic vacuum field within said semiconductor device. - View Dependent Claims (13)
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14. A light-emitting semiconductor device with improved spontaneous photon emission, comprising:
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a quantum well capable of emitting light of an optical emission wavelength, a thickness of said quantum well being much less than said optical wavelength; a first reflecting interface spaced from said quantum well a distance substantially equal to said optical emission wavelength; a second reflecting interface including a plurality of material layers of alternating values of refractive index, said plurality of layers having one layer arranged nearest said quantum well and spaced from said quantum well a distance substantially equal to one-fourth said optical emission wavelength, whereby said quantum well is intermediate said first and second reflecting interfaces, and wherein a reflectivity of said first reflecting interface is less than a reflectivity of said second reflecting interface; and said quantum well being at an anti-node or node of an electromagnetic vacuum field within said semiconductor device.
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Specification