Pressurized interconnection system for semiconductor chips
First Claim
1. A multilayer pressure stack, (microstack), comprising:
- a plurality of layers, each layer comprising a core having first and second surfaces and dielectric layers formed of a material having a high time-dependent deformation factor and provided on said first and second surfaces of said core;
a plurality of segments formed at selected locations in each layer so that each said layer has a segment at each of said selected locations, each segment being formed of a conductive material having a low time-dependent deformation factor and comprising a via provided in the layer and first and second pads overlying said via and corresponding ones of said dielectric layers;
a plurality of bumps provided on selected pads so that one bump is associated with pads of corresponding segments of adjacent ones of said plurality of layers; and
means for aligning said layers so that said segments and bumps form columns and for releasably pressurizing one of said columns.
1 Assignment
0 Petitions
Accused Products
Abstract
A multilayer pressure stack (microstack) has a plurality of layers formed of a material that may have a high time-dependent deformation factor and a plurality of segments formed in each layer. Each segment comprises a conductive material having a low time-dependent deformation factor and pressure is provided along a column of aligned segments to establish electrical interconnections between the segments in various layers. Interposers formed of non-conductive material may be provided in selected segments to form points of electrical isolation. The plurality of layers, or wafers, includes signal wafers and ground/voltage wafers. The signal wafers are formed of a low dielectric constant material to optimize the propagation velocity of signals traveling in signal traces connecting selected segments in the signal wafer. More than 100 wafers may be provided in a microstack and repairs and revisions of conductor routing are easily accomplished by substituting new wafers within the microstack.
186 Citations
26 Claims
-
1. A multilayer pressure stack, (microstack), comprising:
-
a plurality of layers, each layer comprising a core having first and second surfaces and dielectric layers formed of a material having a high time-dependent deformation factor and provided on said first and second surfaces of said core; a plurality of segments formed at selected locations in each layer so that each said layer has a segment at each of said selected locations, each segment being formed of a conductive material having a low time-dependent deformation factor and comprising a via provided in the layer and first and second pads overlying said via and corresponding ones of said dielectric layers; a plurality of bumps provided on selected pads so that one bump is associated with pads of corresponding segments of adjacent ones of said plurality of layers; and means for aligning said layers so that said segments and bumps form columns and for releasably pressurizing one of said columns. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
-
16. A two-dimensional package for a plurality of semiconductor devices each having an array of contacts, comprising:
-
first and second semiconductor device support means for supporting first and second groups of the plurality of semiconductor devices so that the contacts of the first group of semiconductor devices face the contacts of the second group of semiconductor devices; multilayer pressure stack means for electrically interconnecting selected ones of the contacts of the first group of semiconductor devices with selected ones of the contacts of the second group of semiconductor devices, comprising; a plurality of replaceable layers, each layer having first and second surfaces and comprising a core and a dielectric layer formed of a material ahving a high time-dependent deformation factor, a plurality of segments formed at selected locations in each layer so that each layer has a segment at each of said selected locations, each segment being formed of a conductive material having a low time-dependent deformation factor and comprising a via provided in the layer and first and second pads overlying the via and corresponding ones of the first and second surfaces of the layer, a plurality of bumps provided on selected pads so that one bump is associated with pads of corresponding segments of adjacent ones of said plurality of layers, and interposers formed of non-conductive material provided in selected segments; and means for aligning said layers so that said segments and said bumps form columns and for releasably pressurizing said columns. - View Dependent Claims (17, 18, 19)
-
-
20. A two-dimensional package for a plurality of semiconductor devices each having an array of contacts, comprising:
-
first means for supporting the semiconductor devices; second means for electrically interconnecting selected ones of the contacts of the semiconductor devices, comprising; a plurality of at least fifty replaceable layers, each replaceable layer having first and second surfaces and comprising a core and a dielectric layer formed of a material having a high time-dependent deformation factor, a plurality of segments formed at selected locations in each layer so that each layer has a segment at each of said selected locations, said selected locations corresponding to the positions of respective ones of the contacts of the semiconductor devices, each segment being formed of a conductive material having a low time-dependent deformation factor and comprising a via provided in the layer and first and second pads overlying the vias and respective ones of the first and second surfaces of the replaceable layer, a pluraltiy of bumps provided on selected pads so that one bump is associated with pads of corresponding segments of adjacent ones of said plurality of layers, and signal traces provided on selected layers for providing electrical interconnections between selected ones of said segments, and interposers formed of non-conductive material provided in selected segments; and means for aligning said layes so that said segments form columns and for releasably pressurizing said columns of aligned segments and corresponding ones of the contact of the semiconductor devices so that selected ones of said layers may be replaced. - View Dependent Claims (21, 22)
-
-
23. A multilayer pressurized interconnection assembly comprising:
-
a plurality of signal wafers, each signal wafer comprising a semi-rigid core and a dielectric layer formed of a material having a high time-dependent deformation factor; signal traces provided on said signal wafers, each said signal trace being surrounded and electrically insulated by dielectric material having a composite dielectric constant of less than 2; a plurality of ground wafers provided between respective ones of said signal wafers, each said gruond wafer comprising a conductive core and first and second dielectric layers formed of a material having a high time-dependent deformation factor and provided on each side of the conductive core; a plurality of segments formed at selected locations in each said signal and each said ground wafer so that each signal wafer and each ground wafer has a segment at each of said selected locations, each segment comprising a conductive material having a low time-dependent deformation factor; interrupt means for selectively, electrically interrupting said segments; and means for aligning said layers so that said segments form columns, each column having a longitudinal axis, and for releasably pressurizing said columns of aligned segments to allow said microstack to be disassembled and reassembled for replacement of selected ones of said signal wafers. - View Dependent Claims (24, 25, 26)
-
Specification