Method of forming a thin copper film by low temperture CVD
First Claim
1. A method of forming a thin copper film by CVD, said method consisting essentially of the steps of:
- (a) forming a gas stream containing a copper halide, followed by introducing said gas stream into a CVD reaction chamber having a heated catalytic metal filament arranged therein;
(b) introducing hydrogen gas into said CVD reaction chamber for activation of said hydrogen gas by said heated catalytic metal filament; and
(c) carrying out a reaction between said copper halide contained in said gas stream introduced in step (a) and said hydrogen activated in step (b) near a surface of a substrate arranged within said CVD reaction chamber so as to deposit a thin film of copper on said substrate surface;
wherein said substrate is maintained at a temperature of about 250°
C. to about 300°
C.
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Accused Products
Abstract
A thin copper film is formed by CVD, by (a) forming a gas stream containing a copper halide, followed by introducing said gas stream into a CVD reaction chamber having a heated catalytic metal filament arranged herein, (b) introducing hydrogen gas into the CVD reaction chamber for activation of said hydrogen gas by the heated catalytic metal filament, and (c) carrying out the reaction between the copper halide contained in the gas stream introduced in step (a) and the hydrogen activated in step (b) near the surface of a substrate arranged within the CVD reaction chamber so as to deposit a thin copper film of copper on the substrate surface.
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Citations
13 Claims
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1. A method of forming a thin copper film by CVD, said method consisting essentially of the steps of:
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(a) forming a gas stream containing a copper halide, followed by introducing said gas stream into a CVD reaction chamber having a heated catalytic metal filament arranged therein; (b) introducing hydrogen gas into said CVD reaction chamber for activation of said hydrogen gas by said heated catalytic metal filament; and (c) carrying out a reaction between said copper halide contained in said gas stream introduced in step (a) and said hydrogen activated in step (b) near a surface of a substrate arranged within said CVD reaction chamber so as to deposit a thin film of copper on said substrate surface; wherein said substrate is maintained at a temperature of about 250°
C. to about 300°
C. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification