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Method of late programming MOS devices

  • US 5,091,328 A
  • Filed: 11/21/1989
  • Issued: 02/25/1992
  • Est. Priority Date: 11/21/1989
  • Status: Expired due to Term
First Claim
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1. A method for late programming integrated circuits, comprising the steps:

  • a) forming on a silicon wafer, a field effect transistor, having a channel region defined by a source and drain, self-aligned to a gate formed from a first level conductive layer that is doped with dopant;

    b) depositing a first insulating layer, having an upper surface, over said field effect transistor;

    c) opening contact windows in said first insulating layer over said source and said drain;

    d) depositing a second level conductive layer on said upper surface of first insulating layer thereby filling said contact windows to make a low resistance electrical connection with said source and said drain;

    e) opening a late programming window in said second level conductive layer over said doped gate; and

    f) transporting said dopant from said doped gate into said channel region of said field effect transistor.

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