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Semiconductor on insulator transistor

  • US 5,095,348 A
  • Filed: 12/13/1990
  • Issued: 03/10/1992
  • Est. Priority Date: 10/02/1989
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • semiconductive material having af first conductivity type;

    a first source region formed in said semiconductive material, said source region having a second conductivity type;

    a first drain region formed in said semiconductive material, said drain region having said second conductivity type and said drain region being spaced from said first source region defining a first channel region therebetween;

    a second drain region of said first conductivity type formed in said semiconductive material spaced from said first channel region;

    a second channel region of said second conductivity type formed between said first channel region and said second drain region; and

    a gate formed adjacent to said first and second channel regions, said gate controlling current between said first source and drain regions and between said second drain region and said first channel region.

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