Semiconductor on insulator transistor

• US 5,095,348 A
• Filed: 12/13/1990
• Issued: 03/10/1992
• Est. Priority Date: 10/02/1989
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Houston, Ted
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Kim, Daniel
• Application Number:
  US07/628,933
• Time in Patent Office: 453 Days
• Field of Search: 437/45, 437/84, 357/23.12, 357/235, 357/23.7, 357/42, 307/298, 307/303.2
• US Class Current: 257/57
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body

Abstract

The described embodiments of the present invention provide a method and structure for actively controlling the voltage applied to the channel of field effect transistors. In the described embodiments, a transistor connected to the channel region is fabricated. The channel transistor has opposite conductivity type to the transistor using the main channel region. The source of the channel transistor is connected to the channel and the drain of the channel transistor is connected to a reference voltage. The same gate is used to control the channel transistor and the main transistor. When a voltage which causes the main transistor to be on is applied, the channel transistor is off, thus allowing the channel to float and allowing higher drive current. On the other hand, when a voltage to turn off the main transistor is applied, the channel transistor is turned on, thus clamping the channel region to the reference voltage. This allows for consistent threshold voltage control of the main transistor.

Claims

1. A semiconductor device comprising:

semiconductive material having af first conductivity type;

a first source region formed in said semiconductive material, said source region having a second conductivity type;

a first drain region formed in said semiconductive material, said drain region having said second conductivity type and said drain region being spaced from said first source region defining a first channel region therebetween;

a second drain region of said first conductivity type formed in said semiconductive material spaced from said first channel region;

a second channel region of said second conductivity type formed between said first channel region and said second drain region; and

a gate formed adjacent to said first and second channel regions, said gate controlling current between said first source and drain regions and between said second drain region and said first channel region.

2. A device as in claim 1 wherein said first conductivity type is P and said second conductivity type is N.

3. A device as in claim 1 wherein said semiconductive material is formed on an insulating layer.

4. A device as in claim 2 wherein said semiconductive material is electrically isolated from other components formed on said insulating layer.

5. A device as in claim 3 wherein said semiconductive material comprises a mesa structure.

6. A device as in claim 1 wherein said semiconductive material comprises crystalline silicon.

7. A device as in claim 1 wherein said second drain region is connected to a reference potential.

8. A device as in claim 1 further comprising a dielectric layer interposed between said gate and said first and second channel regions.

9. A device as in claim 1 wherein said first source region and said second drain region arm electrically connected.

10. A device as in claim 4 wherein said first source region and said second drain region are electrically connected by a layer of conductive silicide.