Semiconductor on insulator transistor
First Claim
1. A semiconductor device comprising:
- semiconductive material having af first conductivity type;
a first source region formed in said semiconductive material, said source region having a second conductivity type;
a first drain region formed in said semiconductive material, said drain region having said second conductivity type and said drain region being spaced from said first source region defining a first channel region therebetween;
a second drain region of said first conductivity type formed in said semiconductive material spaced from said first channel region;
a second channel region of said second conductivity type formed between said first channel region and said second drain region; and
a gate formed adjacent to said first and second channel regions, said gate controlling current between said first source and drain regions and between said second drain region and said first channel region.
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Abstract
The described embodiments of the present invention provide a method and structure for actively controlling the voltage applied to the channel of field effect transistors. In the described embodiments, a transistor connected to the channel region is fabricated. The channel transistor has opposite conductivity type to the transistor using the main channel region. The source of the channel transistor is connected to the channel and the drain of the channel transistor is connected to a reference voltage. The same gate is used to control the channel transistor and the main transistor. When a voltage which causes the main transistor to be on is applied, the channel transistor is off, thus allowing the channel to float and allowing higher drive current. On the other hand, when a voltage to turn off the main transistor is applied, the channel transistor is turned on, thus clamping the channel region to the reference voltage. This allows for consistent threshold voltage control of the main transistor.
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Citations
10 Claims
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1. A semiconductor device comprising:
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semiconductive material having af first conductivity type; a first source region formed in said semiconductive material, said source region having a second conductivity type; a first drain region formed in said semiconductive material, said drain region having said second conductivity type and said drain region being spaced from said first source region defining a first channel region therebetween; a second drain region of said first conductivity type formed in said semiconductive material spaced from said first channel region; a second channel region of said second conductivity type formed between said first channel region and said second drain region; and a gate formed adjacent to said first and second channel regions, said gate controlling current between said first source and drain regions and between said second drain region and said first channel region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification