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Method for reducing resistance for programmed antifuse

  • US 5,095,362 A
  • Filed: 10/23/1990
  • Issued: 03/10/1992
  • Est. Priority Date: 10/23/1990
  • Status: Expired due to Fees
First Claim
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1. An improved semiconductor device comprising:

  • antifuse film of the type composed of semiconductor material having a first electrical state which is characterized by high electrical resistivity and a second electrical state which is characterized by low electrical resistivity, said material being electrically and permanently configured to said second electrical state from said first electrical state upon application of a voltage exceeding a predetermined threshold voltage applied across at least a portion of said material, only that portion being subjected to said threshold voltage being configured from said first state to said second state, the remaining portion of said material, which is not exposed to said threshold voltage, remaining in said first state; and

    means for selectively decreasing the resistivity of said second electrical state of said portion of said material without decreasing the resistivity of said first electrical state before selective activation of said portion of said material to said second electrical state,wherein said means for selectively decreasing resistivity comprises deliberately added nonactivated conductive dopants dispersed within said material, said dopants characterized by having a nonactivated state wherein said dopants do not enhance the conduction of carriers in said film, said dopants further characterized by having an activated state wherein said dopants enhance the conduction of carriers in said film, said dopants being configured from said nonactivated state into said activated state upon application of a threshold voltage being applied across a predetermined and selected portion of said material in which said dopants are disposed.

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