Microfabricated pump

• US 5,096,388 A
• Filed: 03/22/1990
• Issued: 03/17/1992
• Est. Priority Date: 03/22/1990
• Status: Expired due to Term

• Current Assignee: Charles Stark Draper Laboratory Incorporated
• Original Assignee: Charles Stark Draper Laboratory Incorporated
• Inventors: Weinberg, Marc S.
• Primary Examiner(s): Rivell, John
• Application Number:
  US07/497,392
• Time in Patent Office: 726 Days
• Field of Search: 417/322, 417/412, 417/413, 417/474, 417/479
• US Class Current: 417/413.3
• CPC Class Codes: A61M 2205/0244 Micromachined materials, e.g. made from silicon wafers, microelectromechanical systems [MEMS] or comprising nanotechnology
• CPC Class Codes: A61M 5/14276 specially adapted for implantation
• CPC Class Codes: F04B 43/043 Micropumps
• CPC Class Codes: F04B 43/14 having plate-like flexible members

Abstract

A micro machined micro pump capable of flow rates on the level of microliters per minute formed by micro machining of a semiconductor material such as silicon with a set of channels or passages and having a semiconductor membrane interacting with the pattern of channels and passages and under selective control of activating means to induce traveling wave type motion of said membrane that creates pump action between inlet and outlet ones of the passages. To induce the pump action motion of the membrane electrical conductors can be applied to the membrane in a pattern which, when selectively activated interact with an electric or magnetic field to produce such motion. Alternatively piezolelectric or other electrostrictive mechanisms may be employed to induce the appropriate membrane motion.

Claims

1. A micro machined micro pump comprising:

a body of a chemically etchable material;

an inlet and an outlet channel through said body from first and second faces terminating in a substantially planar face;

a membrane over said substantially planar face;

means for forcing said membrane into shapes which selectively conveys fluid from said inlet passage along said substantially planar face to said outlet passage.

2. The pump of claim 1 wherein said body comprises doped silicon or quartz.

3. The pump of claim 1 wherein:

said body includes one or more additional channels in said body at said substantially planar face intermediate said inlet and outlet channels;

said membrane is segmented into selectively controllable portions, with each portion extending across said substantially planar surface between and partially overlapping one and another of said channels.

4. The pump of claim 1 wherein said membrane comprises a thin silicon membrane of 500 to 5,000 microns square.

5. The pump of claim 1 wherein said membrane comprises a stretched semiconductor material biased by stretching to normally cover said inlet and outlet channels.

6. The pump of claim 1 wherein said membrane includes a stretched semiconductor material biased to normally open said inlet and outlet channels.

7. The pump of claim 1 wherein said means for forcing comprises:

a plurality of electrical conductors placed in a pattern on said membrane; and

means for sequentially activating said conductors according to a predetermined pattern; and

means for interacting with said sequentially activated conductors to force said membrane toward or away from said substantially planar surface.

8. The pump of claim 7 wherein said means for interacting includes means for producing a magnetic field in a direction parallel to said substantially planar axially aligned with the direction of flow induced by said forcing means along said substantially planar surface.

9. The pump of claim 7 wherein said interacting means includes means for establishing an electrostatic field with said conductors.

10. The pump of claims 5 or 6 wherein said means for forcing comprises:

a plurality of electrical conductors placed in a pattern on said membrane; and

means for sequentially activating said conductors according to a predetermined pattern; and

means for interacting with said sequentially activated conductors to force said membrane toward or away from said substantially planar surface.

11. The pump of claim 10 wherein said interacting means includes means for electrostatically forcing said pattern of conductors in selective regions.

12. The pump of claim 1 wherein said forcing means further includes:

a pattern of electrostrictive material on said membrane;

means for activating said electrostrictive material.

13. The pump of claim 1 wherein said membrane includes a stretched semiconductor material.

14. The pump of claim 1 wherein said membrane is of a material selected from the group consisting of doped silicon, an oxide or nitride of silicon, polysilicon, or a polymide.

15. The pump of claim 1 wherein said body includes a top portion having said membrane in a frame and a bottom portion having said planar surface.

16. The pump of claim 15 wherein said inlet and outlet channels are in said top portion.

17. The pump of claim 15 wherein said channels are in said bottom portion.

18. The pump of claim 1 wherein said planar surface includes a dielectric layer.