Process for manufacturing segmented channel structures
First Claim
1. A method of fabricating rectangular and large aspect ratio features in a substrate amenable to anisotropic etching processes, comprising:
- forming a patterned etching mask on a planar surface of a substrate;
said etching mask being delineated to expose segmented areas in said substrate, such that said plurality of segmented areas are separated by a plurality of wall structures in said etching mask; and
anisotropically etching said exposed areas of said substrate for a period of time such that wall structures formed during said anisotropic etching step are substantially removed before said etching step is terminated.
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Abstract
In semiconductor technologies such as thermal ink jet printhead fabrication, there exists a need for the precise placement of channels in a substrate. Due to errors in plane alignment in semiconductor substrates, channel structures tend to widen dimensions, thus lowering precision. A one-step anisotropic etching process is disclosed for accurately making channel structures, as well as reservoir structures. Channel structures are formed by segmenting the channel, such that during the anisotropic etching, thin walls between the segments break down before the completion of the etch. Widening of channels is greatly reduced, thus increasing precision. During such a one-step process, larger structures, such as a reservoir, can be formed during the same step.
41 Citations
23 Claims
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1. A method of fabricating rectangular and large aspect ratio features in a substrate amenable to anisotropic etching processes, comprising:
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forming a patterned etching mask on a planar surface of a substrate; said etching mask being delineated to expose segmented areas in said substrate, such that said plurality of segmented areas are separated by a plurality of wall structures in said etching mask; and anisotropically etching said exposed areas of said substrate for a period of time such that wall structures formed during said anisotropic etching step are substantially removed before said etching step is terminated. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of fabricating channels and a reservoir in a substrate amenable to anisotropic etching processes for a thermal ink jet printhead, comprising:
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forming a patterned etching mask on a planar surface of a substrate; said etching mask being delineated to expose broad and segmented areas in said substrate, such that said plurality of segmented areas are separated by a plurality of wall structures in said etching mask; and anisotropically etching said exposed areas of said substrate for a period of time such that said exposed broad area is completely etched through said substrate and wall structures formed during said anisotropic etching step are substantially removed before said etching step is driven to completion. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method of fabricating channels and a reservoir in a substrate amenable to etching processes for a thermal ink jet printhead, comprising:
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forming a patterned etching mask on a planar surface of a substrate; said etching mask being delineated to expose broad and segmented areas in said substrate, such that said plurality of segmented areas are separated by a plurality of wall structures in said etching mask; removing said photoresist layer; anisotropically etching said exposed areas of said substrate for a period of time such that said exposed broad area is completely etched through said substrate and wall structures formed during said anisotropic etching step are substantially removed before said etching step is driven to completion; removing said etching mask; and coupling said substrate to a heater die to form a thermal ink jet printhead.
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Specification