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Process for manufacturing segmented channel structures

  • US 5,096,535 A
  • Filed: 12/21/1990
  • Issued: 03/17/1992
  • Est. Priority Date: 12/21/1990
  • Status: Expired due to Fees
First Claim
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1. A method of fabricating rectangular and large aspect ratio features in a substrate amenable to anisotropic etching processes, comprising:

  • forming a patterned etching mask on a planar surface of a substrate;

    said etching mask being delineated to expose segmented areas in said substrate, such that said plurality of segmented areas are separated by a plurality of wall structures in said etching mask; and

    anisotropically etching said exposed areas of said substrate for a period of time such that wall structures formed during said anisotropic etching step are substantially removed before said etching step is terminated.

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