Method of fabricating high-density interconnect structures having tantalum/tantalum oxide layers
First Claim
Patent Images
1. A method for preparing a metal/dielectric high-density interconnect structure, comprising:
- (a) providing a substrate coated on its upper surface with patterned electroplating seed layers, and a photosensitive dielectric layer photopatterned thereover, which exposes the electroplating seed layers;
(b) depositing on said dielectric and exposed electroplating seed layers a substantially continuous layer of tantalum;
(c) forming a substantially continuous layer of anodic tantalum oxide on said tantalum layer to produce a tantalum/tantalum oxide layer;
(d) patterning said tantalum/tantalum oxide layer to expose said electroplating seed layers while maintaining electrical connection between said electroplating seed layers and said tantalum layer;
(e) electroplating a metal conductor on said electroplating seed layers; and
(f) removing exposed tantalum/tantalum oxide layers to electrically isolate said metal conductor lines, and to thereby produce a planar interconnect structure.
2 Assignments
0 Petitions
Accused Products
Abstract
A method of fabricating a high-density multilayer copper/polyimide interconnect structure utilizing a blanket tantalum/tantalum oxide layer that electrically connects all of the electroplating seed layers to the edge of the substrate; upon completion of the electroplating process, the excess tantalum/tantalum oxide layer is etched off to produce isolated conductor lines. A multilayer copper/polyimide interconnect structure may be fabricated by repeating this fabrication sequence for each layer.
160 Citations
9 Claims
-
1. A method for preparing a metal/dielectric high-density interconnect structure, comprising:
-
(a) providing a substrate coated on its upper surface with patterned electroplating seed layers, and a photosensitive dielectric layer photopatterned thereover, which exposes the electroplating seed layers; (b) depositing on said dielectric and exposed electroplating seed layers a substantially continuous layer of tantalum; (c) forming a substantially continuous layer of anodic tantalum oxide on said tantalum layer to produce a tantalum/tantalum oxide layer; (d) patterning said tantalum/tantalum oxide layer to expose said electroplating seed layers while maintaining electrical connection between said electroplating seed layers and said tantalum layer; (e) electroplating a metal conductor on said electroplating seed layers; and (f) removing exposed tantalum/tantalum oxide layers to electrically isolate said metal conductor lines, and to thereby produce a planar interconnect structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method of producing a multilayer metal/dielectric high-density interconnect structure, which comprises:
-
(a) providing a substrate coated on its upper surface with patterned electroplating seed layers covered by a photosensitive dielectric layer, and photopatterning trenches in the dielectric layer to thereby expose the electroplating seed layers, followed by baking the substrate to harden the dielectric layer; (b) depositing on said dielectric and exposed electroplating seed layers a substantially continuous layer of tantalum; (c) forming a substantially continuous layer of anodic tantalum oxide on said tantalum layer to produce a tantalum/tantalum oxide layer; (d) patterning said tantalum/tantalum oxide layer to expose said electroplating seed layers while maintaining electrical connection between said electroplating seed layers and said tantalum layer; (e) electroplating a metal conductor on said electroplating seed layers; (f) removing exposed tantalum/tantalum oxide layers to electrically isolate said metal conductor lines, thereby producing a planar interconnect structure; and (g) combining a plurality of said planar interconnect structures to form a multilayer metal/dielectric high-density interconnect structure.
-
Specification