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High step coverage silicon oxide thin films

  • US 5,098,865 A
  • Filed: 07/30/1991
  • Issued: 03/24/1992
  • Est. Priority Date: 11/02/1989
  • Status: Expired due to Fees
First Claim
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1. The process for preparing high step coverage silicon dioxide coatings on semiconductor wafers in the manufacture of semiconductor devices comprising the steps of:

  • placing a silicon semiconductor wafer having surface discontinuities with a width/height aspect ratio of between 1.5 and 2.0 to be coated in a process chamber;

    heating the wafer in the process chamber to a temperature of from about 200°

    C,. to about 400°

    C., and maintaining said temperature during the deposition of silicon dioxide;

    maintaining the pressure in the process chamber at from about 1 to 3 torr during the deposition of silicon dioxide;

    introducing a mixture consisting essentially of disilane and nitrous oxide into the process chamber and maintaining the wafer in an atmosphere consisting essentially of a gaseous mixture of disilane and nitrous oxide; and

    initiating and maintaining plasma enhanced chemical vapor deposition of silicon dioxide from said gaseous mixture by applying radio frequency energy at about 0.04 W/cm2 to 0.12 W/cm2 to the wafer to create a plasma adjacent the surface of said wafer to produce. a coating having a high step coverage of at least 0.55 at an aspect ratio on the wafer between 1.5 and 2.0.

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