High step coverage silicon oxide thin films

• US 5,098,865 A
• Filed: 07/30/1991
• Issued: 03/24/1992
• Est. Priority Date: 11/02/1989
• Status: Expired due to Fees

• Current Assignee: Versum Materials US, LLC (Merck & Co., Inc.)
• Original Assignee: Air Products and Chemicals Incorporated (Linde Plc)
• Inventors: Hey, Hans P. W., Francis, Terry A., Machado, Jose R.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): DANG, TRUNG Q
• Application Number:
  US07/738,065
• Time in Patent Office: 238 Days
• Field of Search: 437/238, 437/173, 437/235, 148/DIG. 118
• US Class Current: 438/788
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: Y10S 148/118 Oxide films

Abstract

A process for preparing high step coverage silicon dioxide coatings on semiconductor wafers comprising the placing of the wafer to be coated in a process chamber, introducing disilane and nitrous oxide into the process chamber and maintaining the wafer in an atmosphere consisting essentially of a gaseous mixture of disilane and nitrous oxide and initiating and maintaining plasma enhanced chemical vacuum deposition of silicon dioxide from said gaseous mixture by applying radio frequency energy to the wafer to create a plasma adjacent the surface of said wafer is disclosed.

Claims

1. The process for preparing high step coverage silicon dioxide coatings on semiconductor wafers in the manufacture of semiconductor devices comprising the steps of:

placing a silicon semiconductor wafer having surface discontinuities with a width/height aspect ratio of between 1.5 and 2.0 to be coated in a process chamber;

heating the wafer in the process chamber to a temperature of from about 200°

C,. to about 400°

C., and maintaining said temperature during the deposition of silicon dioxide;

maintaining the pressure in the process chamber at from about 1 to 3 torr during the deposition of silicon dioxide;

introducing a mixture consisting essentially of disilane and nitrous oxide into the process chamber and maintaining the wafer in an atmosphere consisting essentially of a gaseous mixture of disilane and nitrous oxide; and

initiating and maintaining plasma enhanced chemical vapor deposition of silicon dioxide from said gaseous mixture by applying radio frequency energy at about 0.04 W/cm² to 0.12 W/cm² to the wafer to create a plasma adjacent the surface of said wafer to produce. a coating having a high step coverage of at least 0.55 at an aspect ratio on the wafer between 1.5 and 2.0.

2. The process of claim 1 wherein the atmosphere is maintained by introducing disilane at the rate of about 18 standard cubic centimeters per minute per wafer and nitrous oxide at the rate of about 3660 standard cubic centimeters per minute per wafer.

3. The process of claim 1 wherein the disilane-to-nitrous oxide ratio in the atmosphere is about 1 part of disilane to 203 parts of nitrous oxide, by volume.

4. The process for preparing high step coverage silicon dioxide coatings on semiconductor wafers in the manufacture of semiconductor devices comprising the steps of:

placing a silicon semiconductor wafer to be coated having surface discontinuities with a width/height aspect ratio of at least about 1.5 in a process chamber;

heating the wafer in the process chamber to a temperature of from about 200°

C. to about 400°

C. and maintaining said temperature during the deposition of silicon dioxide;

maintaining the pressure in the process chamber at from about 1 to 3 torr during the deposition of silicon dioxide;

introducing a mixture consisting essentially of disilane and nitrous oxide into the process chamber and maintaining the wafer in an atmosphere consisting essentially of a gaseous mixture of disilane and nitrous oxide; and

initiating and maintaining plasma enhanced chemical vapor deposition of silicon dioxide from said gaseous mixture by applying radio frequency energy at about 0.04 W/cm² to the wafer to create a plasma adjacent the surface of said wafer to produce a coating having a high step coverage of at least about 0.7 at an aspect ratio on the wafer of 1.5 or greater.

5. The process of claim 4 wherein the disilane-to-nitrous oxide ratio in the atmosphere is bout 1 part of disilane to 203 parts of nitrous oxide, by volume.