Organometallic compounds

• US 5,099,044 A
• Filed: 07/16/1990
• Issued: 03/24/1992
• Est. Priority Date: 12/10/1988
• Status: Expired due to Fees

• Current Assignee: Merck Patent GmbH (Merck & Co., Inc.)
• Original Assignee: Merck Patent GmbH (Merck & Co., Inc.)
• Inventors: Pohl, Ludwig, Hostalek, Martin, Erdmann, Dietrich
• Primary Examiner(s): Dees, Jose G.
• Assistant Examiner(s): NAZARIO GONZALEZ, PORFIRIO
• Application Number:
  US07/548,872
• Time in Patent Office: 617 Days
• Field of Search: 556/13, 556/20, 556/70, 556/1, 556/174, 556/186, 556/190
• US Class Current: 556/1
• CPC Class Codes: C07F 5/00 Compounds containing elements of Groups 3 or 13 of the Periodic Table
• CPC Class Codes: C07F 5/062 Al linked exclusively to C
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/20 Deposition of aluminium only
• CPC Class Codes: C23C 16/301 AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Abstract

The invention relates to organometallic compounds which are intramolecularly stabilized, and also to their use for the production of thin films and epitaxial layers by gas-phase deposition.

Claims

1. Organometallic compounds of the formula I:

##STR6## wherein M denotes aluminum, indium or gallium,

Y denotes --NR³ R⁴, --PR³ R⁴, --AsR³ R⁴, --SbR³ R⁴, --F or a perfluorinated alkyl group containing 1-7 carbon atoms,

X denotes, if Y=--F or a perfluorinated alkyl group containing 1-7 carbon atoms;

--(CHR⁵)_n where n=1, 2, 3, 4 or 5,

o--(CH₂)_p --C₆ H₄ --(CH₂)_q --,

3. The use of the organometallic compounds of the formula I according to claim 1 for the gas-phase deposition of the metal of the main group III or of a III-V combination on substrates.

4. The use of the organometallic compounds of the formula I according to claim 1 for the deposition of epitaxial layers.

5. Process for the production of thin films on substrates by gas-phase deposition of the metal of the main group III or of a III-V combination from organometallic compounds, characterized in that the compounds of the formula I according to claim 1 are used as organometallic compounds.

6. Process according to claim 4, characterized in that one or more compounds of arsenic, antimony or phosphorus which are gaseous under the reaction conditions used are supplied for the production of compound semiconductors, and of optical and opto-electronic components during the deposition process.

7. Process according to claim 4, characterized in that dopants are added additionally to the organometallic compounds of the formula I during the deposition process.

8. Process according to claim 4, characterized in that the compounds of the formula I are added as dopants during the deposition process of other organometallic compounds.

2. 2--(CH₂)_p --C₆ H₁₀ --(CH₂)_q --,

1,2--(CH₂)_p --C₆ H₈ --(CH₂)_q --,

1,2--(CH₂)_p --C₆ H₆ --(CH₂)_q --,

1,2--(CH₂)_p --C₅ H₈ --(CH₂)_q --,

1,2--(CH₂)_p --C₅ H₆ --(CH₂)_q --,

1,2--(CH₂)_p --C₅ H₄ --(CH₂)_q --,

1,2--(CH₂)_p --C₄ H₆ --(CH₂)_q --, or if Y=--NR³ R⁴, --PR³ R⁴, --AsR³ R⁴ or --SbR³ R⁴ :

o--C₆ H₄ --,

1,2--C₆ H₁₀ --,

o--(CH₂)_r --C₆ H₄ --(CH₂)_s --,

1,2--(CH₂)_r --C₆ H₁₀ --(CH₂)_s --,

1,2--(CH₂)_p --C₆ H₈ --(CH₂)_q --,

1,2--(CH₂)_p --C₆ H₆ --(CH₂)_q --,

1,2--(CH₂)_p --C₅ H₈ --(CH₂)_q --,

1,2--(CH₂)_p --C₅ H₆ --(CH₂)_q --,

1,2--(CH₂)_p --C₅ H₄ --(CH₂)_q -- or

1,2--(CH₂)_p --C₄ H₆ --(CH₂)_q --,

r and s in each case denote, independently of each other, 1, 2 or 3,

p and q in each case denote, independently of each other, 0, 1, 2 or 3,

R¹, R², R³ and R⁴ in each case denote, independently of each other, an alkyl group or alkenyl group containing up to 8 carbon atoms, it being possible for these groups to be partially or completely fluorinated, a cycloalkyl group or cycloalkenyl group containing 3-8 carbon atoms or a phenyl group,

and

R⁵ in each case denotes H or an alkyl group containing 1-4 carbon atoms, which may also be partially or completely fluorinated.