Semiconductor pressure pulse wave sensor

• US 5,101,829 A
• Filed: 12/19/1990
• Issued: 04/07/1992
• Est. Priority Date: 01/09/1990
• Status: Expired due to Term

• Current Assignee: Omron Healthcare Company Limited (Omron Corporation)
• Original Assignee: Colin Electronics Co., Ltd.
• Inventors: Fujikawa, Kimio, Harada, Chikao
• Primary Examiner(s): Kamm, William E.
• Assistant Examiner(s): Nasser, Jr, Robert L.
• Application Number:
  US07/630,076
• Time in Patent Office: 475 Days
• Field of Search: 128/680, 128/687, 128/688, 128/689, 128/690
• US Class Current: 600/485
• CPC Class Codes: A61B 2562/0247 Pressure sensors
• CPC Class Codes: A61B 2562/043 in a linear array
• CPC Class Codes: A61B 5/022 by applying pressure to close blood vessels, e.g. against the skin; Ophthalmodynamometers
• CPC Class Codes: G01L 9/06 of piezo-resistive devices

Abstract

A semiconductor sensor for detecting a pressure pulse wave produced from an arterial vessel of a subject, including a semiconductor substrate including a thin portion obtained by locally forming a recess in one of opposite surfaces of the semiconductor substrate, at least one semiconductor pressure sensing element supported by the thin portion of the semiconductor substrate, for converting a pressure pulse wave transmitted from the arterial vessel to the thin portion, into an electric signal, and at least one semiconductor active element supported by the semiconductor substrate, for converting the electric signal into a different electric signal, the at least one active element including a portion of the semiconductor substrate.

Claims

1. A semiconductor sensor for detecting a pressure pulse wave produced from an arterial vessel of a subject, comprising:

a semiconductor substrate including a thin portion obtained by locally forming a recess in one of opposite surfaces of the semiconductor substrate;

at least one semiconductor pressure sensing element supported by said thin portion of said semiconductor substrate, for converting a pressure pulse wave transmitted from said arterial vessel to said thin portion, into an electric signal; and

at least one semiconductor active element supported by said semiconductor substrate, for converting said electric signal into a different electric signal, said at least one active element including a portion of said semiconductor substrate.

2. The sensor as set forth in claim 1, wherein each of said at least one semiconductor pressure sensing element includes four resistors and four conductors which cooperate with each other to provide a Wheatstone bridge.

3. The sensor as set forth in claim 2, wherein each of said resistors and conductors is provided by diffusion of an impurity into said thin portion of said semiconductor substrate.

4. The sensor as set forth in claim 2, wherein each of said resistors is provided by diffusion of an impurity into said thin portion of said semiconductor substrate, while each of said conductors is provided by vapor deposition of aluminum to said thin portion of said semiconductor substrate.

5. The sensor as set forth in claim 2, wherein each of said resistors and conductors is provided by injection of an impurity into said thin portion of said semiconductor substrate.

6. The sensor as set forth in claim 2, wherein each of said resistors is provided by injection of an impurity into said thin portion of said semiconductor substrate, while each of said conductors is provided by vapor deposition of aluminum to said thin portion of said semiconductor substrate.

7. The sensor as set forth in claim 1, wherein said at least one semiconductor pressure sensing element include a plurality of semiconductor pressure sensing elements which cooperate with each other to provide an array along a straight line, said at least one active element comprising a first and a second multiplexer each of which is connected to each of said pressure sensing elements and has a single output terminal.

8. The sensor as set forth in claim 7, wherein said semiconductor pressure sensing elements consist of four pressure sensing elements, each of said first and second multiplexers including four analog switches which are connected between corresponding pressure sensing elements, respectively, and the corresponding single output terminal, said each of said first and second multiplexers further including four AND grates connected to an input of the corresponding analog switches, respectively, and two inverters each of which is connected to an input of each of two of said four AND gates, said four AND gates and said two inverters cooperating with each other to successively actuate said four analog switches so that a multiplexed signal is generated from the single output terminal of said each of said first and second multiplexers.

9. The sensor as set forth in claim 7, wherein said first and second multiplexers are provided by injection of an impurity into a portion of said semiconductor substrate which portion is different from said thin portion.

10. The sensor as set forth in claim 7, wherein said first and second multiplexers are provided by diffusion of an impurity into a portion of said semiconductor substrate which portion is different from said thin portion.

11. The sensor as set forth in claim 7, further comprising a power supply circuit and a preamplifier, each of said pressure sensing elements including four resistors and four conductors which cooperate with each other to provide a Wheatstone bridge, said power supply circuit being connected to each Wheatstone bridge of each of said pressure sensing elements to supply said each Wheatstone bridge with electricity, said preamplifier being connected to the single output terminal of said each of said firth and second multiplexers to amplify the multiplexed signal generated by said each of said first and second multiplexers.

12. The sensor as set forth in claim 11, further comprising a wiring substrate which supports said power supply circuit and said preamplifier on a first surface thereof, said semiconductor substrate being secured to said first surface of said wiring substrate.

13. The sensor as set forth in claim 12, wherein said wiring substrate is formed of a ceramic.

14. The sensor as set forth in claim 12, further comprising a spacer member formed of an electrically insulating material, said spacer member being inserted between said semiconductor substrate and said wiring substrate.

15. The sensor as set forth in claim 11, wherein said power supply circuit and said preamplifier are supported by said semiconductor substrate, each of said power supply circuit and said preamplifier including a portion of said semiconductor substrate.

16. The sensor as set forth in claim 1, wherein said semiconductor substrate is formed of single crystal silicon.

17. The sensor as set forth in claim 16, further comprising a back-up plate formed of single crystal silicon, said semiconductor substrate being adhered to said back-up plate with a silicone rubber adhesive.

18. The sensor as set forth in claim 1, further comprising pressing means for pressing said semiconductor substrate against said arterial vessel via a body surface of said subject.

19. A semiconductor sensor for detecting a pressure pulse wave produced from an arterial vessel of a subject, comprising:

a semiconductor substrate including at lest one thin portion obtained by locally forming at least one recess in one of opposite surfaces of the semiconductor substrate;

a plurality of semiconductor pressure sensing elements supported by said at least one thin portion of said semiconductor substrate, each of said pressure sensing elements converting said pressure pulse wave transmitted from said arterial vessel to said at least one thin portion, into an electric signal; and

at least one semiconductor active element supported by said semiconductor substrate, for converting said electric signal into a different signal, said at least one active element including a portion of said semiconductor substrate which portion is different from said at least one thin portion, said at least one active element comprising a first and a second multiplexer each of which is connected to each of said pressure sensing elements and has a single output terminal.

20. The sensor as set forth in claim 19, wherein said at least one recess formed in said one surface of said semiconductor substrate consists of a single recess, and said at least one thin portion of said semiconductor substrate consists of a single thin portion.

21. A semiconductor sensor for detecting a pressure pulse wave produced from an arterial vessel of a subject, comprising:

a semiconductor substrate including a thin portion obtained by locally forming a recess in one of opposite surfaces of the semiconductor substrate;

four semiconductor pressure sensing elements supported by said thin portion of said semiconductor substrate, for converting said pressure pulse wave transmitted from said arterial vessel to said thin portion, into an electric signal; and

at least one semiconductor active element supported by said semiconductor substrate, for converting said electric signal into a different signal, said at least one active element including a portion of said semiconductor substrate, said at least one active element comprising a first and a second multiplexer each of which is connected to each of said four pressure sensing elements and has a single output terminal, said each of said first and second multiplexers including four analog switches which are connected between a corresponding pressure sensing element, respectively, and the corresponding single output terminal, said each multiplexer further including four AND gates connected to an input of the corresponding analog switches, respectively, and two inverters each of which is connected to an input of each of two of said four AND gates, said four AND gates and said two inverters cooperating with each other to successively actuate said four analog switches so that a multiplexed signal is generated from the single output terminal of said each multiplexer.

22. A semiconductor sensor for detecting a pressure pulse wave produced from an arterial vessel of a subject, comprising:

a semiconductor substrate including a thin portion obtained by locally forming a recess in one of opposite surfaces of the semiconductor substrate, wherein said semiconductor substrate is formed of single crystal silicon;

a back-up plate formed of single crystal silicon, said semiconductor substrate being attached to said back-up plate with a silicone rubber adhesive;

at least one semiconductor pressure sensing element supported by said thin portion of said semiconductor substrate, for converting said pressure pulse wave transmitted from said arterial vessel to said thin portion, into an electric signal; and

at least one semiconductor active element supported by said semiconductor substrate, for converting said electric signal into a different signal, said at least one active element including a portion of said semiconductor substrate.