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Method of fabricating a thin film transistor

  • US 5,102,813 A
  • Filed: 05/30/1989
  • Issued: 04/07/1992
  • Est. Priority Date: 05/30/1988
  • Status: Expired due to Fees
First Claim
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1. A method of producing a thin film transistor, comprising:

  • applying onto a non-silicon foundation a thin film of silicon semiconductor material under such condition that polycrystalline or microcrystalline material is formed;

    forming source and/or drain regions of a doped semiconductor material on said film;

    applying insulating material onto said film; and

    forming a gate region on said insulating material;

    wherein forming said source and/or drain regions includes depositing such semiconductor material by a PECVD process in which an etching gas is present to etch oxide from the film such that said source and/or drain regions at least in the region of said thin film have a crystalline structure that depends upon the crystalline structure of said thin film and said source and drain regions have a conductivity greater than or equivalent to approximately 5 mhos per cm.

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