Method of fabricating a thin film transistor
First Claim
1. A method of producing a thin film transistor, comprising:
- applying onto a non-silicon foundation a thin film of silicon semiconductor material under such condition that polycrystalline or microcrystalline material is formed;
forming source and/or drain regions of a doped semiconductor material on said film;
applying insulating material onto said film; and
forming a gate region on said insulating material;
wherein forming said source and/or drain regions includes depositing such semiconductor material by a PECVD process in which an etching gas is present to etch oxide from the film such that said source and/or drain regions at least in the region of said thin film have a crystalline structure that depends upon the crystalline structure of said thin film and said source and drain regions have a conductivity greater than or equivalent to approximately 5 mhos per cm.
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Accused Products
Abstract
A thin film transistor is produced by applying onto a non-silicon foundation, a thin film of silicon semiconductor material under such conditions that polycrystalline or microcrystalline material is formed. Source and/or drain regions of doped semiconductor material are then formed onto the film; following by applying insulating material onto the film, and a gate region onto the insulating material. The source and/or drain regions are applied so that such regions have a crystalline structure that depends upon the crystalline structure of the underlying thin film. The resulting source and drain regions have high lateral conductivity so that source and drain contacts can be made with reduced cross-sectional areas. The method may employ a self-alignment process to simplify device production.
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Citations
9 Claims
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1. A method of producing a thin film transistor, comprising:
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applying onto a non-silicon foundation a thin film of silicon semiconductor material under such condition that polycrystalline or microcrystalline material is formed; forming source and/or drain regions of a doped semiconductor material on said film; applying insulating material onto said film; and
forming a gate region on said insulating material;wherein forming said source and/or drain regions includes depositing such semiconductor material by a PECVD process in which an etching gas is present to etch oxide from the film such that said source and/or drain regions at least in the region of said thin film have a crystalline structure that depends upon the crystalline structure of said thin film and said source and drain regions have a conductivity greater than or equivalent to approximately 5 mhos per cm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification