Multiphase printing for E-beam lithography

• US 5,103,101 A
• Filed: 03/04/1991
• Issued: 04/07/1992
• Est. Priority Date: 03/04/1991
• Status: Expired due to Term

• Current Assignee: Nikon Corporation
• Original Assignee: ETEC Systems Incorporated (Applied Materials Incorporated)
• Inventors: Thomas, John R., Poreda, John T., Berglund, C. Neil
• Primary Examiner(s): Berman, Jack I.
• Application Number:
  US07/664,066
• Time in Patent Office: 400 Days
• Field of Search: 250/492.2, 250/492.22, 250/492.21, 250/492.3, 250/398, 250/396, 250/396 ML
• US Class Current: 250/492.2
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03F 7/704 Scanned exposure beam, e.g. raster-, rotary- and vector scanning mask projection exposure involving relative movement of patterned beam and workpiece during imaging G03F7/70358
• CPC Class Codes: H01J 2237/31762 Computer and memory organisation
• CPC Class Codes: H01J 37/3026 Patterning strategy
• CPC Class Codes: H01J 37/3174 Particle-beam lithography, e.g. electron beam lithography

Abstract

A method for a raster scan particle or light beam lithography system for writing in multiple passes interleaved in such a manner as to achieve a composite result nearly identical to normal single pass raster scan writing with overlapped spots. Multiple pass writing, achieved with little or no degradation or throughput or lithography quality, provides an ideal platform for implementation of known image averaging techniques to improve lithography quality. This technique is combined with the known writing technique of "Virtual Addressing" to improve resolution with little or no degradation of throughput.

Claims

1. In the generation of a pattern for use in the fabrication of integrated circuits in a rasterscan lithography system, the steps in the process comprising:

forming a beam of a predetermined diameter defining the width of a pixel of the pattern;

providing a material sensitive to said beam to be irradiated by the beam;

forming a plurality of said pixels by directing said beam onto said material;

controlling said beam as it forms said pixels to form an array of pixels, each pixel being an element of a feature of the pattern of a predetermined length and width;

repeating the steps of forming and controlling a plurality of times, with each step forming a separate array of pixels, each pixel being an element of a predefined feature not formed in a previous step of forming such that the composite of all steps of forming forms a plurality of adjacent lines of said pixels, said lines defining a feature of the pattern of predetermined length and width.

2. The method of claim 1, wherein said beam is an electron beam.

3. The method of claim 1, wherein said beam is a light beam.

4. The method of claim 1, wherein said beam is an ion beam.

5. The method of claim 1, wherein each pixel overlaps an adjacent pixel by about 50% of a pixel width.

6. The method of claim 1, further comprising the step of defining an edge of said feature by forming only alternate pixels along said edge.

7. The method of claim 1, wherein the step of repeating includes repeating three times, thereby forming said pattern in four passes.

8. In the generation of a raster scan pattern, the steps comprising:

forming a beam of a predetermined diameter defining the width of an element of the pattern;

providing a material sensitive to said beam to be irradiated by the beam;

forming a plurality of said elements by directing said beam onto said material;

controlling said beam as it forms said elements to form a plurality of adjacent lines of said elements, said lines defining a portion of the pattern of a predetermined length and width;

repeating the steps of forming and controlling a plurality of times, with each step forming a separate array of elements, each element being a portion of the same predefined feature and not being formed in a previous step of forming; and

developing the pattern in the material.

9. A rasterscan system for forming a pattern on a radiation sensitive material comprising:

means for forming a radiating beam of a predetermined diameter defining the width of a pixel of the pattern;

means for forming a plurality of said pixels on said material by directing said beam onto said material;

means for controlling said beam as it forms said pixels to form an array of pixels, each pixel being a feature of the pattern; and

means for repeating the forming of said pixels by passing said beam across said material a plurality of times, with each pass forming a separate array of pixels, each pixel being an element of a predefined feature not formed in a previous pass, such that all passes together form a plurality of adjacent lines of said pixels, said lines defining a feature of the pattern of predetermined length and width.

10. In the generation of patterns for lithography using a raster scanning pattern generation apparatus, a method of printing a raster pattern, as defined by a plurality of pixels formed on a grid in a plurality of n² passes where n is an integer greater than 1, comprising:

forming a beam of a predetermined diameter defining the width of each pixel;

providing a material sensitive to the beam to be irradiated by said beam on a substrate;

forming the pixels by directing said beam onto said material;

controlling said beam as it forms said pixels onto said grid, thereby imaging every nth pixel of said plurality of pixels that define said raster pattern and exposing the first of n² passes;

repeating the steps of forming and controlling the beam to form a plurality of pixels onto said grid, with each pass offset from each previous pass, until a total of n² passes have been exposed, and a plurality of pixels have been formed in a one-to-one correspondence with said raster pattern; and

finally, developing the material.

11. The method of claim 10, wherein said beam is an electron beam.

12. The method of claim 10, wherein said beam is a light beam.

13. The method of claim 10, wherein the said beam is an ion beam.

14. The method of claim 10, wherein the pixels are arranged on said grid at a predetermined uniform spacing, each pass being offset from each previous pass along one dimension of said grid.

15. The method of claim 14, wherein the diameter is equal to n times said predetermined uniform spacing.

16. The method of claim 10, further comprising the step of positioning said substrate on a movable support.

17. The method of claim 10, further comprising the step of defining an edge of said pattern by the additional step of forming only alternate pixels along said edge.