Selective area regrowth for surface-emitting lasers and other sharp features

• US 5,104,824 A
• Filed: 11/06/1990
• Issued: 04/14/1992
• Est. Priority Date: 11/06/1990
• Status: Expired due to Term

• Current Assignee: TTI Inventions A LLC (Intellectual Ventures LLC)
• Original Assignee: Bell Communications Research, Inc. (Telefonaktiebolaget LM Ericsson)
• Inventors: Clausen, Edward M. Jr., Colas, Etienne G., Von Lehmen, Ann C.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): Fleck, Linda J.
• Application Number:
  US07/609,920
• Time in Patent Office: 525 Days
• Field of Search: 437/126, 437/129, 437/962, 437/90, 437/937, 437/946, 148/DIG. 26, 148/DIG. 50, 148/DIG. 103, 148/DIG. 105, 148/DIG. 95
• US Class Current: 438/34
• CPC Class Codes: H01L 21/02057 Cleaning during device manufacture
• CPC Class Codes: H01L 21/02395 Arsenides
• CPC Class Codes: H01L 21/02463 Arsenides
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/02507 Alternating layers, e.g. superlattice
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02642 Mask materials other than SiO2 or SiN
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01S 5/18305 with emission through the substrate, i.e. bottom emission
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/2059 by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
• CPC Class Codes: H01S 5/209 special etch stop layers
• CPC Class Codes: H01S 5/2222 having special electric properties
• CPC Class Codes: H01S 5/2224 semi-insulating semiconductors
• CPC Class Codes: H01S 5/423 having a vertical cavity
• CPC Class Codes: Y10S 148/026 Deposition thru hole in mask
• CPC Class Codes: Y10S 148/05 Etch and refill
• CPC Class Codes: Y10S 148/095 Laser devices

Abstract

A method of etching and regrowing III-V compounds in a sharply defined vertical feature. Molecular beam epitaxy is used to grow a laterally undefined vertical-cavity, surface-emitting diode laser structure from semiconducting III-V materials. The structure includes interference mirrors defining the end of a Fabry-Perot cavity and a quantum-well layer in the middle of the cavity. A tungsten mask is then defined over the areas of the intended two-dimensional array of lasers. A chemically assisted ion beam etches through to the bottom of the laser structure to from an array of high aspect-ratio pillars. A thermal chlorine gas etch removes a portion of the sidewalls of the pillars without attacking the tungsten, thereby removing ion-beam damage at the sides of the vertical-cavities and creating a lip of the tungsten mask overhanging the pillar sidewall. Organo-metallic chemical vapor deposition is used to regrow III-V material around the pillars. This growth process can quickly planarize the pillars. The tungsten lip prevents the growth from climbing over the top of the pillar. The regrown material may be insulating, or may include conductive portions ot provide laser contact, or may be selected to provide tailored index guiding in the laser device.

Claims

1. A method for etching and regrowing a semiconductor, comprising the steps of:

defining a mask comprising a refractory metal on a surface of a body comprising a first compound semiconductor;

a first etching step of directionally etching said semiconductor through said mask to produce a structure in said body having a bottom surface and a side surface;

a second etching step of etching said side surface by a chlorine etching process after said first etching step; and

then growing a second compound semiconductor on said bottom surface and said side surface by a growth process in which at least one non-elemental precursor chemically reacts.

2. A method as recited in claim 1, wherein said refractory metal comprises tungsten.

3. A method as recited in claim 1, wherein said growth process comprises vapor phase deposition.

4. A method as recited in claim 1, further comprising depositing a vertical optical cavity structure comprising a plurality of compound semiconductor layers on a compound semiconductor substrate to thereby form said body, and wherein said defining step defines an array of a plurality of said masks, whereby said first etching step forms an array of optical cavities.

5. A method as recited in claim 4, wherein said depositing step deposits an active layer in a middle portion of said vertical-cavity optical structure, whereby said defining step defines an array of surface-emitting lasers.

6. A method as recited in claim 5, wherein said active layer comprises at least one quantum-well layer.

7. A method as recited in claim 5, wherein said growing step substantially planarizes said array of lasers.

8. A method as recited in claim 5, wherein said growing step deposits an insulating compound semiconductor horizontally adjacent to said active layer.

9. A method as recited in claim 8, wherein said growing step additionally deposits a conductive compound semiconductor horizontally adjacent to a portion of said vertical optical cavity structure disposed vertically away from said active layer.

10. A method as recited in claim 1, wherein said second etching step comprises a thermal chlorine etching.

11. A method as recited in claim 10, wherein said first etching step comprises ion beam etching in a chlorine ambient.

12. A method of forming an optical vertical-cavity structure, comprising the steps of:

epitaxially depositing upon a substrate a vertical-cavity structure comprising a lower mirror, a spacer region, and at least part of an upper mirror;

forming on said structure an array of masks comprising a refractory metal;

a first step of directionally etching said structure through at least a portion of said upper mirror using said masks to protect portions of said structure from said etching, thereby forming an array of vertical cavities;

a second step of etching with chlorine performed after said first etching step; and

growing material on sides of said vertical cavities by vapor phase deposition wherein said material does not substantially grow on said masks.

13. A method as recited in claim 12, wherein said vertical-cavity structure includes an active region and wherein said first etching step etches through said active region.

14. A method as recited in claim 13, wherein said growing step grows an insulating material in a space removed by said first etching step.

15. A method as recited in claim 12, wherein said forming step forms and said depositing step deposits III-V semiconductor materials.

16. A method as recited in claim 12, wherein said second etching step comprises a thermal chlorine etching.

17. A method as recited in claim 16, wherein said first etching step comprises ion beam etching in a chlorine ambient.

18. A method for etching and regrowing a semiconductor, comprising the steps of:

defining a mask on a surface of a body comprising a first semiconductor;

a first etching step of anisotropically etching said semiconductor through said mask to produce a structure in said body having a bottom surface and a side surface;

a second etching step of etching said side surface by a chlorine etching process after said first etching step; and

then growing a second semiconductor on said bottom surface and said side surface.

19. A method as recited in claim 18, wherein said first etching step comprises ion beam etching.

20. A method as recited in claim 18, wherein said first and second semiconductors comprise compound semiconductors, wherein said mask comprises a refractory metal, and wherein said growing step grows said second semiconductor on said bottom surface and said side surface by growth process in which at least one non-elemental precursor chemically reacts.