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Selective area regrowth for surface-emitting lasers and other sharp features

  • US 5,104,824 A
  • Filed: 11/06/1990
  • Issued: 04/14/1992
  • Est. Priority Date: 11/06/1990
  • Status: Expired due to Term
First Claim
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1. A method for etching and regrowing a semiconductor, comprising the steps of:

  • defining a mask comprising a refractory metal on a surface of a body comprising a first compound semiconductor;

    a first etching step of directionally etching said semiconductor through said mask to produce a structure in said body having a bottom surface and a side surface;

    a second etching step of etching said side surface by a chlorine etching process after said first etching step; and

    then growing a second compound semiconductor on said bottom surface and said side surface by a growth process in which at least one non-elemental precursor chemically reacts.

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