Device and method of manufacturing a device

• US 5,104,848 A
• Filed: 04/14/1989
• Issued: 04/14/1992
• Est. Priority Date: 04/21/1988
• Status: Expired due to Fees

• Current Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Van Der Kolk, Gerrit J., Miedema, Andries R., Duchateau, Johan P. W. B.
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Dang, Hung Xuan
• Application Number:
  US07/338,922
• Time in Patent Office: 1,096 Days
• Field of Search: 357/5, 357/4, 505/72, 505/874, 505/1
• US Class Current: 505/191
• CPC Class Codes: H01L 21/76891 by using superconducting materials
• CPC Class Codes: H01L 23/53285 containing superconducting materials
• CPC Class Codes: H01L 29/437 Superconductor materials
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/452 on AIII-BV compounds
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10N 60/0744 Manufacture or deposition of electrodes
• CPC Class Codes: Y10S 505/702 Josephson junction present

Abstract

A device comprising semiconductor elements and conductor tracks of an oxidic superconducting material, electrically conductive connections being formed between semiconductor elements and conductor tracks, is provided with an electrically conductive antidiffusion layer between the semiconductor elements and the conductor tracks. The antidiffusion layer is composed of an amorphous alloy having the composition A_x E_1-x, wherein A is selected from one or more of the elements Zr, Nb, Mo, Ru, Rh, Pd, Hf, Ta, W, Re, Os, Ir and Pt, wherein E is selected from one or more of the elements B, Si, Al, Ga and Ge, and wherein x has a value of from 0.7 to 0.95.

Claims

1. A device comprising semiconductor elements and elements of an oxidic material, electrically conductive connections being provided between said semiconductor elements and said elements of oxidic material, said electrically conductive connections comprising at least one antidiffusion layer composed of an amorphous alloy of the composition A_x E_1-x, wherein A is at least one element selected from the group consisting of Zn, Nb, Mo, Ru, Rh, Pd, Hb, Ta, W, Re, Os, Ir and Pt, wherein E is B or a mixture of B and Si and wherein X has a value of 0.7 to 0.95.

2. A device as claimed in claim 1, characterized in that the elements of oxidic material are conductor tracks of an oxidic superconducting material.

3. A device as claimed in claim 2, characterized in that E is composed of Si and B, in an overall quantity of from 5 to 30 mol %.

4. A device as claimed in claim 1, characterized in that the elements of oxidic material are dielectric elements of a ceramic material.