Contact type image sensor having an organic type thin film light emitting element

• US 5,105,238 A
• Filed: 09/28/1990
• Issued: 04/14/1992
• Est. Priority Date: 09/29/1989
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Nakamura, Hiroki, Nikaido, Masaru
• Primary Examiner(s): Moore, David K.
• Assistant Examiner(s): GARBER, WENDY RAE
• Application Number:
  US07/589,940
• Time in Patent Office: 564 Days
• Field of Search: 358/209, 357/17, 357/19, 357/30 K, 250/370.11, 250/332
• US Class Current: 257/40
• CPC Class Codes: H04N 1/0313 Direct contact pick-up heads, i.e. heads having no array of elements to project the scanned image elements onto the photodectors
• CPC Class Codes: H04N 1/0316 illuminating the scanned image elements through the plane of the photodetector, e.g. back-light illumination

Abstract

A contact type image sensor is disclosed, wherein an illumination source having a thin film light emitting element is opposed to a sensor section having thin film photo sensitive elements, a transparent substrate being disposed therebetween. The thin film light emitting element is so-called an organic thin film EL element, which comprises an anode, a hole transport thin film, an electron transport organic fluorescent thin film, and a cathode. Since the organic thin film EL element can be driven at a low DC voltage, it decrease the fluctuation of the intensity of the illumination light, resulting in remarkably imprving the reading accuracy of an image. In addition, the thin film light emitting element can be operated with a small amount of power. Moreover, it can be thinly structured.

Claims

1. A contact type image sensor, comprising:

an optically transparent substrate having first and second main surfaces;

an illumination source disposed on said first main surface of said transparent substrate, said illumination source being driven by a direct current and having an organic type thin film light emitting element, said organic type thin film light emitting element having an optically transparent anode electrode, a hole transport thin film disposed on said anode electrode, an electron transport organic fluorescent thin film disposed on said hole transport thin film, and a cathode electrode disposed on said electron transport organic fluorescent thin film, said organic type thin film light emitting element being covered with a sealing material; and

a sensor section disposed on said second main surface of said transparent substrate so as to face said organic type thin film emitting element, said sensor section having a thin film photo sensitive element.

2. The contact type image sensor as set forth in claim 1, wherein said anode electrode is disposed on said first main surface of said transparent substrate.

3. The contact type image sensor as set forth in claim 1, wherein said anode electrode is disposed on a transparent substrate layer and said transparent substrate layer is adhered to and disposed on said transparent substrate.

4. The contact type image sensor as set forth in claim 1, wherein said hole transparent thin film is a hole transport organic thin film.

5. The contact type image sensor as set forth in claim 1, wherein said hole transport thin film is a p-type inorganic semiconductor thin film.

6. The contact type image sensor as set forth in claim 1, wherein said thin film photosensitive element comprises a common electrode disposed on said second main surface of said transport substrate, a photosensitive material layer disposed on said common electrode, and a transport electrode disposed on said photosensitive material layer as a discrete electrode.

7. The contact type image sensor as set forth in claim 6, wherein a center wave length of luminescence of said thin film light emitting element ranges from 520 nm to 620 nm.

8. The contact type image sensor as set forth in claim 7, wherein said electron transport organic fluorescent thin film contains aluminum trisoxine, said photosensitive material containing amorphous silicon.

9. The contact type image sensor as set forth in claim 1, wherein said sealing material is at least one selected from vapor phase polymerization polyparaxylen and its derivatives.

10. A contact type image sensor, comprising:

an optically transparent substrate having first and second main surfaces;

an illumination source disposed on said first main surface of said transparent substrate, said illumination source being driven by a direct current and having an organic type thin film light emitting element, said organic type thin film light emitting element having an optically transparent anode electrode, a hole transport thin film disposed on said anode electrode, an electron transport organic fluorescent thin film disposed on said hole transport thin film, an electron transport organic thin film disposed on said electron transport organic fluorescent thin film, and a cathode electrode disposed on said electron transport organic fluorescent thin film, said organic type thin film light emitting element being covered with a sealing material; and

a sensor section disposed on said second main surface of said transparent substrate so as to face said organic type thin film light emitting element, said sensor section having a thin film photosensitive element.

11. The contact type image sensor as set forth in claim 10, wherein said anode electrode is disposed on said first main surface of said transparent substrate.

12. The contact type image sensor as set forth in claim 10, wherein said anode electrode is disposed on a transparent substrate layer and said transparent substrate layer is adhered to and disposed on said transparent substrate.

13. The contact type image sensor as set forth in claim 10, wherein said sealing material is at least one selected from vapor phase polymerization polyparaxylen and its derivatives.

14. A method of producing a contact type image sensor, comprising the steps of:

producing, on a transparent substrate having first and second main surfaces, an illumination source having an organic type thin film light emitting element, said illumination source being made by layering a transparent electroconductive thin film constituting an anode electrode, a hole transport thin film, and an electron transport organic fluorescent thin film, and then an electroconductive thin film constituting a cathode electrode, one after the other, on said first main surface of said transparent substrate;

covering said organic type thin film light emitting element with a sealing material; and

producing a sensor section on said second main surface of said transparent substrate so as to face said organic type thin film light emitting element, said sensor section having a thin film photosensitive element.

15. The method of producing a contact type image sensor as set forth in claim 14, wherein said step of producing a sensor section comprises a step of layering an electroconductive thin film constituting a common electrode, a photosensitive material thin film, and a transparent electroconductive thin film as a discrete electrode, one after the other.