Vertical transistor device fabricated with semiconductor regrowth
First Claim
1. A method of fabricating a transistor device of the type comprising a single type of semi-conductor material divided into active regions by a control region, the method comprising:
- providing a contact layer;
forming a first isolation layer on a surface of the contact layer;
providing a conducting layer on a surface of the first isolation layer;
removing material from the layered article to provide a groove through the conducting and isolation layers, thereby exposing the contact layer surface;
removing isolation material from at least one sidewall of the groove, thereby allowing the conducting layer to extend beyond the isolation material; and
growing a semiconductor crystal within the groove past the conducting layer to form the active regions and the control region.
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Accused Products
Abstract
A vertical transistor device is characterized by active regions vertically separated by a narrower control region. The control region is defined by conducting layer extensions which extend into a groove within which semiconductor material is regrown during device fabrication. The device is further characterized by regions of isolating material, located horizontally adjacent to the active regions, said isolating material serving to reduce parasitic capacitance and improve thermal distribution within the device, thereby improving frequency and power performance.
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Citations
25 Claims
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1. A method of fabricating a transistor device of the type comprising a single type of semi-conductor material divided into active regions by a control region, the method comprising:
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providing a contact layer; forming a first isolation layer on a surface of the contact layer; providing a conducting layer on a surface of the first isolation layer; removing material from the layered article to provide a groove through the conducting and isolation layers, thereby exposing the contact layer surface; removing isolation material from at least one sidewall of the groove, thereby allowing the conducting layer to extend beyond the isolation material; and growing a semiconductor crystal within the groove past the conducting layer to form the active regions and the control region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification