Ion source having auxillary ion chamber

• US 5,107,170 A
• Filed: 10/17/1989
• Issued: 04/21/1992
• Est. Priority Date: 10/18/1988
• Status: Expired due to Term

• Current Assignee: Nissin Electric Company Limited
• Original Assignee: Nissin Electric Company Limited
• Inventors: Takara, Hideaki, Sasai, Toshiaki, Ishikawa, Junzo, Matsubara, Yoshio, Nogawa, Shuichi
• Primary Examiner(s): O SHEA, SANDRA L
• Application Number:
  US07/422,724
• Time in Patent Office: 917 Days
• Field of Search: 313/362.1, 313/231.31, 315/111.21, 315/111.41, 315/111.81, 315/111.91, 250/423 F
• US Class Current: 313/362.1
• CPC Class Codes: H01J 2237/0825 for producing different ions simultaneously
• CPC Class Codes: H01J 27/18 with an applied axial magnetic field
• CPC Class Codes: H01J 37/08 Ion sources; Ion guns
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence

Abstract

An ion source having an auxiliary plasma chamber and a main plasma chamber. The auxiliary plasma chamber receives an ionizable gas and is provided with microwaves with sufficient power to create a high frequency discharge and generate a subplasma for sustaining the creation of an ion plasma in the main chamber. Multiple auxiliary plasma chambers may be used and each may be separately regulated. Protective plates, screens, and coatings may be provided to protect the ion plasma of the main chamber from sputtering a facing wall of the auxiliary plasma chamber.

Claims

1. An ion source, comprising:

an auxiliary plasma chamber having a gas inlet for ionization and an electron emitting port disposed therein;

high-frequency discharge means for generating a subplasma by ionizing the gas introduced into said auxiliary plasma chamber;

a main plasma chamber;

an electric insulator, said main plasma chamber being connected via said electric insulator to the electron emitting port of said auxiliary plasma chamber, electrons being emitted from said auxiliary plasma chamber into said main plasma chamber;

d.c. voltage applying means for generating a main plasma in said main plasma chamber by means of d.c. discharge; and

means for drawing ions from the main plasma generated in said main plasma chamber and for forming ion beams.

2. An ion source as claimed in claim 1, wherein said means for generating a subplasma comprises a microwave waveguide connected to said auxiliary plasma chamber and means for supplying microwaves via said waveguide to said auxiliary plasma chamber.

3. An ion source as claimed in claim 1, wherein said means for generating a subplasma comprises, an antenna in said auxiliary plasma chamber, a coaxial cable connected to said antenna, and means for supplying high-frequency energy to said coaxial cable to cause said antenna to introduce microwave energy into said auxiliary plasma chamber.

4. An ion source as claimed in claim 1, wherein said high frequency discharge means for generating a subplasma comprises means for generating a high-frequency discharge on the order of MHz.

5. An ion source as claimed in any of claims 1-4, wherein said d.c. voltage applying means comprises a voltage source having a negative pole connected to said auxiliary plasma chamber and a positive pole connected to an anode electrode provided in the main plasma.

6. An ion source as claimed in any of claims 1-4, further comprising additional auxiliary plasma chambers, substantially identical to said first auxiliary plasma chamber, attached via insulators to said main plasma chamber.

7. An ion source as claimed in claim 6 further comprising, regulator means for individually regulating the subplasma generated by each said auxiliary plasma chamber.

8. An ion source as claimed in claim 7, wherein said regulator means comprises a plurality of series connections of current detectors and variable d.c. power sources, each said series connection connected between said anode electrode means and one of said auxiliary plasma chambers, respectively, and control means responsive to the currents detected by said current detectors for controlling the voltages of said variable d.c. power sources, respectively.

9. An ion source as claimed in claim 7, wherein said regulator means comprises a plurality of series connections of current detectors and variable impedances, each said series connection connected between said d.c. voltage applying means and one of said auxiliary plasma chambers, respectively, and control means responsive to the currents detected by said current detectors for controlling the impedances of said variable impedances, respectively.

10. An ion source as claimed in any of claims 2 or 3 further comprising;

additional auxiliary plasma chambers substantially identical to said first mentioned auxiliary plasma chamber and each being connected to said main plasma chamber via an insulator; and

further comprising, separate controllable microwave sources for feeding microwaves to said auxiliary plasma chambers, respectively;

a plurality of current detectors, one for each auxiliary plasma chamber, connected to said d.c. voltage applying means and said auxiliary plasma chambers, respectively; and

control means responsive to the currents detected by said current detectors for controlling the microwave power of said controllable microwave sources, respectively, to regulate the subplasma generated by said auxiliary plasma chambers.

11. An ion source as claimed in claim 10, wherein said separate controllable microwave sources comprises, a common source of microwave power, a branch circuit having an input connected to said common source of microwave power and a plurality of outputs, a plurality of microwave regulators controlled by said control means, connected respectively between said plurality of outputs and said auxiliary plasma chambers.

12. An ion source as claimed in claim 3, wherein said antenna provided in said auxiliary plasma chamber is made of conductive material having a high melting point and has an exposed portion covered with a protective coating having a high melting point, a lower sputtering coefficient and highly oxygen-resistant properties.

13. An ion source as claimed in claim 1, further comprising a protective plate provided between said auxiliary plasma chamber and said main plasma chamber, and positioned to protect the external joining wall of said auxiliary plasma chamber from being bombarded by ions of the main plasma chamber, said protective plate being so biased as to have potential higher than that of said auxiliary plasma chamber but lower than that of said main plasma chamber.

14. An ion source as claimed in claim 13, wherein said protective plate is attached to said electric insulator on the auxiliary plasma side of said protective plate and is attached directly to said main plasma chamber on the other side thereof.

15. An ion source as claimed in claim 1-3, further comprising a protective material made of insulating material coated on a wall of said auxiliary plasma chamber facing said main plasma chamber.

16. An ion source as claimed in any of claims 1-3, further comprising a screen plate used to cover said electrode emitting port of said auxiliary plasma chamber, but at a distance therefrom, in order to screen ions from penetrating from said main plasma chamber to said auxiliary plasma chamber, said screen plate being so biased as to have a potential higher than that of said auxiliary plasma chamber but lower than that of said main plasma chamber.

17. An ion source as claimed in claim 13, further comprising a screen plate used to cover said electron emitting port of said auxiliary plasma chamber, but at a distance therefrom, in order to screen ions from penetrating from said main plasma chamber to said auxiliary plasma chamber, said screen plate being so biased as to have potential higher than that of said auxiliary plasma chamber but lower than that of said main plasma chamber.

18. An ion source comprising:

an auxiliary plasma chamber having a gas inlet for ionization at one end thereof and an electron emitting port at the other end thereof;

high frequency discharge means for generating a subplasma by ionizing the gas introduced into said auxiliary plasma chamber;

a main plasma chamber;

an electric insulator;

said main plasma chamber being connected via said electric insulator to the electron emitting port of said auxiliary plasma chamber;

d.c. voltage applying means for generating a main plasma in said main plasma chamber by means of d.c. discharge;

means for drawing ions from the main plasma generated in main plasma chamber and for forming ion beams;

a protective plate provided between said auxiliary plasma chamber and said main plasma chamber, and positioned to protect the external joining wall of said auxiliary plasma chamber from being bombarded by ions of the main plasma chamber, said protective plate being so biased as to have potential higher than that of said auxiliary plasma chamber but lower than that of said main plasma chamber; and

,

a second electric insulator separating said auxiliary and main plasma chambers, and wherein said protective plate is positioned sandwiched between said first and second insulators.