Optical waveguide system comprising a rare-earth Si-based optical device

• US 5,107,538 A
• Filed: 06/06/1991
• Issued: 04/21/1992
• Est. Priority Date: 06/06/1991
• Status: Expired due to Term

• Current Assignee: American Telephone & Telegraph Company (AT&T, Inc.)
• Original Assignee: AT&T, Inc.
• Inventors: Kimerling, Lionel C., Michel, Jurgen, Jacobson, Dale C., Benton, Janet L., Poate, John M.
• Primary Examiner(s): Healy, Brian
• Application Number:
  US07/711,243
• Time in Patent Office: 320 Days
• Field of Search: 350/96.11, 350/96.12, 350/96.13, 350/96.14, 350/96.15, 350/96.34, 372/6, 372/7, 372/21, 372/43, 372/50, 372/68
• US Class Current: 385/130
• CPC Class Codes: H01L 33/343 characterised by the doping materials
• CPC Class Codes: H01S 3/1603 rare earth
• CPC Class Codes: H01S 3/1608 erbium
• CPC Class Codes: H01S 3/1628 characterised by a semiconducting matrix
• CPC Class Codes: H01S 5/3068 deep levels
• CPC Class Codes: H01S 5/50 Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Abstract

It has been discovered that co-doping of Er-doped Si with a light element such as C, N or F can result in substantially increased Er luminescence. A further increase in luminescence can result if, in addition, oxygen is present in the Si. Apparatus or systems according to the invention comprise a device (e.g., laser, optical ampifier, LED) that comprises a planar waveguide whose core region contains, in addition to at least 90 atomic % Si or SiGe alloy, Er, Pr and/or Nd, and further contains C, N and/or F, and preferably also contains oxygen. Currently preferred apparatus or systems according to the invention comprise means for electrically pumping the waveguide means.

Claims

1. An article or system comprising a device that comprises optical waveguide means adapted for guiding signal radiation of wavelength λ

_s, said waveguide means comprising material that contains a rare earth (RE) element selected from the group consisting of erbium (Er), praseodymium (Pr) and neodymium (Nd), the device further comprising means for causing at least some of the RE in the waveguide means to undergo an electronic transition to an excited electronic state that is associated with luminescence;

characterized in that

a) the waveguide means are planar waveguide means comprising a core region comprising semiconductor material selected from the group consisting of Si and SiGe alloy; and

b) the core region further comprises at least one member of the group of elements consisting of C, N, and F, said member to be referred-to as a the "co-dopant", such that the luminescence associated with the waveguide means is substantially higher than the luminescence associated with otherwise identical comparison waveguide means that do not contain the co-dopant.

2. The article or system of claim 1, wherein the core region further comprises oxygen in an amount effective to result in increased luminescence, as compared to otherwise identical comparison waveguide means that substantially do not contain oxygen.

3. The article or system of claim 1, wherein said at least one of the co-dopants is present in an amount sufficient to result in luminescence intensity that is at least double the luminescence intensity associated with said comparison waveguide means.

4. The article or system of claim 1, wherein the optical waveguide means are an integral part of a body that comprises single crystal Si.

5. The article or system of claim 4, wherein said means for causing the RE to undergo the transition comprise means for coupling into the core region electromagnetic radiation of wavelength λ

_p <

λ

_s.

6. The article or system of claim 4, wherein said means for causing the RE to undergo the transition comprise a n-doped and a p-doped portion of the waveguide means, arranged such as to form a p-n junction, and further comprises means for electrically contacting said n-doped portion and said p-doped portion, such that an electrical current can be caused to flow across the p-n junction.

7. The article or system of claim 1, wherein the device comprises reflective means adapted for forming an optical cavity for the signal radiation, the device being a laser.

8. The article or system of claim 1, further comprising means for coupling the signal radiation into the core region of the waveguide means, and means for providing signal radiation from the waveguide means to radiation utilization means, wherein the device is an optical amplifier.

9. The article or system of claim 2, wherein RE is Er, and wherein λ

_s is approximately equal to 1.55 μ

m.

10. The article or system of claim 6, wherein the article comprises a p-n homojunction structure in a light emitting diode configuration.