Cleaning of CVD reactor used in the production of polycrystalline silicon by impacting with carbon dioxide pellets

• US 5,108,512 A
• Filed: 09/16/1991
• Issued: 04/28/1992
• Est. Priority Date: 09/16/1991
• Status: Expired due to Term

• Current Assignee: Hemlock Semiconductor Corporation (Corning Incorporated)
• Original Assignee: Hemlock Semiconductor Corporation (Corning Incorporated)
• Inventors: Bielby, Eugene F., Goffnett, David M., Richardson, Mark D.
• Primary Examiner(s): Morris, Theodore
• Assistant Examiner(s): Chaudhry, Saeed T.
• Application Number:
  US07/760,300
• Time in Patent Office: 225 Days
• Field of Search: 134/6, 134/7, 134/8, 134/22.18, 134/32, 51/317, 51/319, 51/320, 51/321
• US Class Current: 134/7
• CPC Class Codes: B24C 1/003 using material which dissolves or changes phase after the treatment, e.g. ice, CO2
• CPC Class Codes: B24C 3/325 for internal surfaces, e.g. of tubes
• CPC Class Codes: C01B 33/035 by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Abstract

The present invention is a process for the cleaning of the inner surfaces of a chemical vapor deposition reactor used in the production of polycrystalline silicon. The process comprises impacting the surfaces to be cleaned with solid carbon dioxide pellets. The carbon dioxide pellets dislodge silicon deposits from the surface of the reactor without damaging the surface of the reactor and without providing a source for contamination of polycrystalline silicon produced in the cleaned reactor. The present process is particularly useful for the cleaning of the inner surfaces of chemical vapor deposition reactors used in the production of semi-conductor grade silicon.

Claims

1. A process for cleaning the surfaces of a chemical vapor deposition reactor, the process comprising:

impacting silicon deposits on the inner surfaces of a reactor used in chemical vapor deposition of a source gas selected from a group consisting of silane and halosilane to form polycrystalline silicon, with carbon dioxide pellets to effect dislodgment of the silicon deposits.

2. A process according to claim 1, where the polycrystalline silicon is of semi-conductor grade.

3. A process according to claim 1, where the source gas is trichlorosilane.

4. A process according to claim 1, where the carbon dioxide pellets have dimensions within a range of about 1/16 inch to about 3/8 inch.

5. A process according to claim 1, where density of the carbon dioxide pellets is greater than about 85 pounds per cubic foot.

6. A process according to claim 1, where density of the carbon dioxide pellets is greater than about 95 pounds per cubic foot.

7. A process according to claim 1, where an accelerant gas is used to increase velocity of the carbon dioxide pellets, the accelerant gas is nitrogen gas, and pressure of the nitrogen gas is about 40 to 250 psi.

8. A process according to claim 7, where the pressure of the nitrogen gas is about 175 to 200 psi.

9. A process according to claim 1, where the inner surfaces of the reactor is constructed from high carbon steel.

10. A process according to claim 1, where the reactor surfaces to be cleaned are rotated around a moveable nozzle for delivering the carbon dioxide pellets.