CMOS amplifier with offset adaptation

• US 5,109,261 A
• Filed: 10/31/1990
• Issued: 04/28/1992
• Est. Priority Date: 12/09/1988
• Status: Expired due to Term

• Current Assignee: Synaptics Incorporated
• Original Assignee: Synaptics Incorporated
• Inventors: Allen, Timothy P., Mead, Carver A.
• Primary Examiner(s): PRENTY, MARK V
• Application Number:
  US07/607,158
• Time in Patent Office: 545 Days
• Field of Search: 357/23.5, 357/30, 357/59, 357/71
• US Class Current: 257/369
• CPC Class Codes: G06N 3/063 using electronic means
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H03F 1/0261 with control of the polarisation voltage or current, e.g. gliding Class A
• CPC Class Codes: H03F 1/303 using a switching device H03F1/305, H03F3/005, H03F3/38 take precedence
• CPC Class Codes: H03F 3/45479 characterised by the way of common mode signal rejection
• CPC Class Codes: H03F 3/45753 using switching means, e.g. sample and hold
• CPC Class Codes: H03F 3/45977 using switching means, e.g. sample and hold

Abstract

An integrated circuit amplifier having a random input offset voltage is adaptable such that the input offset voltage may be cancelled out. An inverting input node is a floating input node and is coupled to a source of input signal by a first capacitor. A second capacitor is connected between the output of the amplifier and the floating node. An ultraviolet window above the second capacitor allows the floating node to be charged, by the application of ultraviolet light, to a voltage which effectively cancels the input offset voltage. The ultraviolet window and capacitor electrodes are arranged such that the ultraviolet light may strike only the desired areas of the structure.

Claims

1. A semiconductor structure, including:

a semiconductor substrate,

a first conductive layer disposed above said semiconductor substrate and separated therefrom by a first layer of insulating material,

a second conductive layer disposed above said first conductive layer, said second conductive layer separated from said first conductive layer by a second layer of insulating material, said second conductive layer including at least two physically separate regions, a portion of a first one of said regions of said at least two physically separate regions of said second conductive layer having a first aperture therein, said first aperture lying above said first conductive layer,

an opaque layer disposed above said second conductive layer, said opaque layer having a second aperture therein, said second aperture lying substantially above said first aperture in said second conductive layer, and said second aperture being larger in area than said first aperture.

2. The semiconductor structure of claim 1 wherein said first and second conductive layers are formed from polysilicon and said first and second insulating layers are formed from silicon dioxide.

3. The semiconductor structure of claim 2 wherein said opaque layer is formed from a metal.

4. A semiconductor structure, including:

a semiconductor substrate,

a first conductive layer disposed above said semiconductor substrate and separated therefrom by a first layer of insulating material, said first conductive layer including at least two physically separate regions,

a second conductive layer disposed above said first conductive layer, said second conductive layer separated from said first conductive layer by a second layer of insulating material, said second conductive layer having a first aperture therein, said first aperture lying above one of said at least two physically separate regions of said first conductive layer,

an opaque layer disposed above said second conductive layer, said opaque layer having a second aperture therein, said second aperture lying substantially above said first aperture in said second conductive layer, and said second aperture being larger in area than said first aperture.

5. The semiconductor structure of claim 4 wherein said first and second conductive layers are formed from polysilicon and said first and second insulating layers are formed from silicon dioxide.

6. The semiconductor structure of claim 4 wherein said opaque layer is formed from a metal.