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Charge-coupled device (CCD) image sensor operable in either interlace or non-interlace mode

  • US 5,111,263 A
  • Filed: 02/08/1991
  • Issued: 05/05/1992
  • Est. Priority Date: 02/08/1991
  • Status: Expired due to Term
First Claim
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1. A CCD image sensor comprising:

  • a substrate of a semiconductor material having a surface;

    a plurality of photodetectors in said substrate at said surface, said photodetectors being arranged in a column;

    a CCD shift register in said substrate at said surface and extending along said column of photodetectors;

    a separate transfer region in said substrate between only a portion of each of said photodetectors and the CCD shift register;

    a set of first and second conductive gates extending across the CCD shift register at each of said photodetectors; and

    each of the transfer regions of alternate photodetectors in the column extending under only the first gate of its respective set of gates, and each of the transfer regions of the other photodetectors in the column extending under only the second gate of its respective set of gates.

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