Charge-coupled device (CCD) image sensor operable in either interlace or non-interlace mode

• US 5,111,263 A
• Filed: 02/08/1991
• Issued: 05/05/1992
• Est. Priority Date: 02/08/1991
• Status: Expired due to Term

• Current Assignee: Eastman Kodak Company
• Original Assignee: Eastman Kodak Company
• Inventors: Stevens, Eric G.
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): Fahmy, Wael
• Application Number:
  US07/652,830
• Time in Patent Office: 452 Days
• Field of Search: 357/24, 357/24 LR, 358/213.19, 358/213.23, 358/213.31, 358/482
• US Class Current: 257/243
• CPC Class Codes: H01L 27/14831 Area CCD imagers
• CPC Class Codes: H04N 25/42 by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
• CPC Class Codes: H04N 25/71 Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors

Abstract

A charge-coupled device (CCD) image sensor, which can be operated either in the interlace mode or in the non-interlace mode, includes in a substrate of a semiconductor material a plurality of photodetectors, such as photodiodes, arranged in an array of rows and columns. A separate CCD shift register in the substrate extends along each column of the photodectectors. First and second sets of conductive gates extend transversely across the CCD shift registers with each first gate extending across a portion of the photodetectors in each row and each of the second gates extending across the remaining portion of the photodetectors in each row. A transfer region extends across the substrate from a portion of each of the photodetectors to an adjacent CCD shift register. The transfer regions of alternate photodetectors in each column extends under the first gates of the photodetectors and the transfer regions of the other photodetectors in each column extends under the second gates of the respective photodetectors.

Claims

1. A CCD image sensor comprising:

a substrate of a semiconductor material having a surface;

a plurality of photodetectors in said substrate at said surface, said photodetectors being arranged in a column;

a CCD shift register in said substrate at said surface and extending along said column of photodetectors;

a separate transfer region in said substrate between only a portion of each of said photodetectors and the CCD shift register;

a set of first and second conductive gates extending across the CCD shift register at each of said photodetectors; and

each of the transfer regions of alternate photodetectors in the column extending under only the first gate of its respective set of gates, and each of the transfer regions of the other photodetectors in the column extending under only the second gate of its respective set of gates.

2. The CCD image sensor of claim 1 in which the CCD shift register comprises a channel region extending along the surface of the substrate adjacent to but spaced from the column of photodetectors, the transfer regions extend to the channel region, and the gates extend laterally across the channel region.

3. The CCD image sensor of claim 2 in which the substrate is of one conductivity type and the channel region is a region in the substrate of the opposite conductivity type.

4. The CCD image sensor of claim 2 further comprising a barrier region around each of said photodetectors, said barrier region having openings therethrough along a portion of the side of each photodetector adjacent the channel region of the CCD shift register, the portion of the substrate in said openings forming the transfer regions between the photodetectors and the channel region.

5. The CCD image sensor of claim 4 in which the substrate is of one conductivity type and the barrier region is a region of the one conductivity type but of higher conductivity than the substrate in the substrate at said surface.

6. The CCD image sensor of claim 4 in which the first gate of each set of gates extends transversely across a portion of its respective photodetector, and the second gate of each set of gates extends across the remaining portion of its respective photodetectors, the openings in the barrier region along alternate photodetectors in the column are under the first gate of the respective photodetector, and the openings in the barrier region along the other photodetectors in the column are under the second gate of the respective photodetector.

7. The CCD image sensor of claim 6 in which each of the gates has an opening therethrough over its respective photodetector.

8. The CCD image sensor of claim 7 further comprising a layer of an insulating material on the said surface of the substrate and the gates are on the insulating layer.

9. The CCD image sensor of claim 8 in which each of the photodetectors comprises a diode having a first region of one conductivity type in the substrate at said surface and a second region of the opposite conductivity type in said first region at said surface.

10. A CCD image sensor comprising:

a substrate of a semiconductor material having a surface;

a plurality of photodetectors in said substrate at said surface, said photodetectors being arranged in an array of spaced rows and columns;

a plurality of CCD shift registers in said substrate with each CCD shift register extending along a separate column of the photodetectors;

a transfer region between only a portion of each of said photodetectors and its adjacent CCD shift register;

a separate set of first and second conductive gates extending transversely across the CCD shift registers and the photodetectors in each of the rows;

the transfer regions of alternate photodetectors in each column extending under only the first gate of its respective set of gates, and the transfer regions of the other photodetectors in each column extending under only the second gate of its respective set of gates.

11. The CCD image sensor of claim 10 in which each of the CCD shift registers comprises a channel region extending along the surface of the substrate adjacent to but spaced from a column of the photodetectors and the transfer regions extend to the channel regions.

12. The CCD image sensor of claim 11 in which the substrate is of one conductivity type and the channel regions are regions in the substrate at said surface of the opposite conductivity type.

13. The CCD image sensor of claim 11 further comprising a separate barrier region around the photodetectors in each column, said barrier regions having openings therethrough along a portion of each of the photodetectors adjacent the channel region of the adjacent CCD shift register, the portion of the substrate in said openings forming the transfer regions between the photodetectors and the channel regions.

14. The CCD image sensor of claim 13 in which the substrate is of one conductivity type and the barrier regions are regions of the one conductivity type but of higher conductivity than the substrate in the substrate and at said surface.

15. The CCD image sensor of claim 13 in which each of the first gate of each set extends transversely across a portion of the photodetectors in its respective row, the second gate of each set extends transversely across the remaining portion of the photodetectors in its respective row, each of the openings in the barrier regions along alternate photodetectors in each column is under its respective first gate, and each of the openings in the barriers regions along the other photodetectors in each column is under its respective second gate.

16. The CCD image sensor of claim 15 in which each of said gates has an opening therethrough over each of the photodetectors in its respective row.

17. The CCD image sensor of claim 16 further comprising a layer of an insulating material on said surface of the substrate and the gates are on said insulating material layer.

18. The CCD image sensor of claim 17 in which each of the photodetectors comprises a diode having a first region of one conductivity type in the substrate at said surface and a second region of the opposite conductivity type in said first region at said surface.