Solar cells with reduced recombination under grid lines, and method of manufacturing same

• US 5,112,409 A
• Filed: 01/23/1991
• Issued: 05/12/1992
• Est. Priority Date: 01/23/1991
• Status: Expired due to Fees

• Current Assignee: Amoco/Enron Solar Co.
• Original Assignee: Solarex (BP PLC)
• Inventors: Silver, Jerry, Warfield, Donald
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US07/646,802
• Time in Patent Office: 475 Days
• Field of Search: 136/256, 136/255, 136/258 AM, 437/2-5, 357/30 J, 357/30 Q
• US Class Current: 136/256
• CPC Class Codes: H01L 31/02167 for solar cells
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/068 the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/202 including only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

Photovoltaic apparatus includes a passivating oxide layer formed directly on the surface of a first conductivity type amorphous silicon material in a pattern corresponding substantially to a preselected metalized wide grid layer pattern. The patterned oxide layer is used as a mask to form a diffused layer of opposite conductivity type amorphous silicon material on those surface portions not covered by the oxide layer. The metalized grid layer is then formed on the oxide layer, covering the oxide layer, and overlapping the diffused opposite conductivity type layer at the edges to form continuous or intermittent ohmic contact areas with the diffused layer along the oxide layer-diffused layer boundaries.

Claims

1. Photovoltaic apparatus for converting incident radiant energy to electrical energy comprising:

a first photovoltaic material layer of one conductivity type and having a surface;

an insulative material layer formed directly on said first layer surface in a pattern corresponding substantially to a preselected grid pattern and having a surface spaced from said first layer surface;

a second photovoltaic material layer of the opposite conductivity type formed on those portions of said first layer surface not covered by said patterned insulative layer, adjacent portions of said insulative and second layers defining boundaries therebetween; and

a metalized grid layer formed directly on said insulative layer surface in said preselected grid pattern, said grid layer covering said insulative layer and overlapping at least a portion of said second layer for electrically contacting said second layer along said defined boundaries, the radiant energy being incident on said second layer and said grid layer.

2. The apparatus as in claim 1 wherein the contact between said grid layer and said second layer is substantially continuous along said defined boundaries.

3. The apparatus as in claim 1 wherein the contact between said grid layer and said second layer is intermittent along said defined boundaries.

4. The apparatus as in claim 1 wherein said first and second layers are amorphous silicon layers.

5. The apparatus as in claim 1 wherein said insulative layer is an oxide layer.

6. The apparatus as in claim 1 wherein said second layer is a diffused layer.

7. Photovoltaic apparatus for converting incident radiant energy to electrical energy comprising:

a first photovoltaic material layer of one conductivity type and having a surface;

an insulative material layer formed directly on said first layer surface in a pattern corresponding substantially to a preselected grid pattern and having a surface spaced from said first layer surface;

a second photovoltaic material layer of the opposite conductivity type formed on those portions of said first layer surface not covered by said patterned insulative layer, adjacent portions of said insulative and second layers defining boundaries therebetween; and

a metalized grid layer formed directly on said insulative layer surface in said preselected grid pattern, said grid layer covering said insulative layer and overlapping at least a portion of said second layer for electrically contacting said second layer along said defined boundaries, wherein said first and second layers are crystalline silicon layers, said insulative layer is a silicon dioxide layer, and said second layer is a diffused layer, the radiant energy being incident on said second layer and said grid layer.

8. The apparatus as in claim 7 wherein the contacts between said grid layer and said second layer are narrow strips of substantially constant transverse width extending substantially continuously along said boundaries.

9. The apparatus as in claim 7 wherein the contacts between said grid layer and said second layer are intermittent along said boundaries.

10. The apparatus as in claim 9 wherein said intermittent contacts include a plurality of substantially rectangular areas regularly spaced along said defined boundaries.

11. A method of making photovoltaic apparatus of the type having a photovoltaic material of one conductivity type layered on a surface of a photovoltaic material base layer of the other conductivity type and a metalized grid layer in a preselected pattern in contact with the photovoltaic material of the one conductivity type, the one conductivity type material layer and grid layer being exposable to the radiant energy to be converted, the method comprising the steps of:

forming an insulative layer directly on the base layer surface in a first pattern corresponding substantially to the preselected pattern;

forming the photovoltaic material layer of the one conductivity type on the portions of the base layer surface not covered by the first patterned insulative layer, wherein boundaries between adjacent portions of the insulative layer and the photovoltaic material layer are defined; and

forming the patterned metalized grid layer directly on the insulative layer, said metalized grid forming step including the steps of covering the insulative layer and overlapping at least portion of the one conductivity type layer for electrically contacting the metalized grid layer and the one conductivity type photovoltaic material layer along the defined boundaries.

12. The method as in claim 11 wherein said metalized grid layer forming step includes overlapping the one conductivity type layer to provide substantially continuous electrically contact along the defined boundaries.

13. The method as in claim 11 wherein said metalized grid layer forming step includes intermittently overlapping the one conductivity type layer to provide intermittent contact along the defined boundaries.

14. The method as in claim 11 wherein said one conductivity type photovoltaic material layer forming step includes a diffusing substep.

15. The method as in claim 11 wherein said insulative layer forming step includes an oxidizing substep.

16. The method as in claim 11 wherein the first patterned insulative layer is used as a mask for the one conductivity type photovoltaic material layer forming step.