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Integrated circuit device particularly adapted for high voltage applications

  • US 5,113,236 A
  • Filed: 12/14/1990
  • Issued: 05/12/1992
  • Est. Priority Date: 12/14/1990
  • Status: Expired due to Term
First Claim
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1. An integrated circuit device exhibiting improved voltage breakdown properties, comprising a semiconductor foundational substrate of a resistivity greater than about 100 ohm-cm of a first conductivity type, an insulating layer provided on said substrate, a semiconductor layer provided on said insulating layer, a plurality of laterally separated circuit elements forming parts of subcircuits provided in said semiconductor layer, a diffusion area of a second conductivity type, opposite to said first conductivity type, provided in said substrate, underlying none of said circuit elements and means for contacting and holding said diffusion area at a voltage at least equal to the highest potential of any subcircuit in said circuit device.

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