Integrated circuit device particularly adapted for high voltage applications
First Claim
1. An integrated circuit device exhibiting improved voltage breakdown properties, comprising a semiconductor foundational substrate of a resistivity greater than about 100 ohm-cm of a first conductivity type, an insulating layer provided on said substrate, a semiconductor layer provided on said insulating layer, a plurality of laterally separated circuit elements forming parts of subcircuits provided in said semiconductor layer, a diffusion area of a second conductivity type, opposite to said first conductivity type, provided in said substrate, underlying none of said circuit elements and means for contacting and holding said diffusion area at a voltage at least equal to the highest potential of any subcircuit in said circuit device.
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Accused Products
Abstract
A silicon on insulator of integrated circuit comprising a plurality of components typically adopted for high voltage application having a semiconductor substrate of a first conductivity type, an insulating layer provided on the substrate, a semiconductor layer provided on the insulating layer, a number of laterally separated circuit elements forming parts of a number of subcircuits provided in the semiconductor layer, a diffusion layer of a second conductivity type opposite to that of the first conductivity type provided in the substrate and laterally separated from all the other circuit elements and means for holding the diffusion layer at a voltage at least equal to that of the highest potential of any of the subcircuits present in the integrated device.
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Citations
14 Claims
- 1. An integrated circuit device exhibiting improved voltage breakdown properties, comprising a semiconductor foundational substrate of a resistivity greater than about 100 ohm-cm of a first conductivity type, an insulating layer provided on said substrate, a semiconductor layer provided on said insulating layer, a plurality of laterally separated circuit elements forming parts of subcircuits provided in said semiconductor layer, a diffusion area of a second conductivity type, opposite to said first conductivity type, provided in said substrate, underlying none of said circuit elements and means for contacting and holding said diffusion area at a voltage at least equal to the highest potential of any subcircuit in said circuit device.
- 7. An integrated circuit device exhibiting improved voltage breakdown properties, particularly adapted for high voltage applications, comprising a relatively high resistivity semiconductor foundational substrate of a first conductivity type, an insulating layer provided on said substrate, a semiconductor layer of a second conductivity type opposite to said first conductivity type provided on said insulating layer, a plurality of circuit elements forming parts of subcircuits provided in said semiconductor layer, a diffusion area of said second conductivity type provided in said semiconductor layer, underlying none of said circuit elements, said diffusion area having no overlying circuit element, and means for holding said diffusion area at a voltage at least equal to the highest potential of any subcircuit in said circuit device.
- 11. A semiconductor-on-insulator lateral MOS transistor source-follower bridge structure exhibiting improved voltage breakdown properties, particularly adapted for high voltage applications comprising a semiconductor foundational substrate of a first conductivity type, an insulating layer provided on said substrate, a semiconducting layer provided on said insulating layer, drain, gate, source and interconnect portions of said transistor provided in said semiconductor layer, a diffusion area of a second conductivity type, opposite to said first conductivity type, provided in said substrate, underlying none of said drain, gate and source portions and means for holding said diffusion area at a voltage at least equal to the highest potential of said drain and source portions.
Specification