Vertical cavity surface emmitting lasers with transparent electrodes

• US 5,115,441 A
• Filed: 01/03/1991
• Issued: 05/19/1992
• Est. Priority Date: 01/03/1991
• Status: Expired due to Term

• Current Assignee: American Telephone & Telegraph Company (AT&T, Inc.)
• Original Assignee: AT&T, Inc.
• Inventors: Zydzik, George J., Wang, Yeong-Her, Tu, Li-Wei, Kopf, Rose F., Schubert, Erdmann F., O'Bryan, Henry M. Jr.
• Primary Examiner(s): Davie, James W.
• Application Number:
  US07/637,245
• Time in Patent Office: 502 Days
• Field of Search: 372/45, 372/46, 372/92, 372/49, 372/44, 372/99
• US Class Current: 372/45.01
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 2301/18 Semiconductor lasers with special structural design for influencing the near- or far-field
• CPC Class Codes: H01S 5/04253 having specific optical properties, e.g. transparent electrodes
• CPC Class Codes: H01S 5/04254 characterised by the shape
• CPC Class Codes: H01S 5/06216 Pulse modulation or generation
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment
• CPC Class Codes: H01S 5/3432 the whole junction comprising only (AI)GaAs

Abstract

Optically transparent and electrically conductive cadmium tin oxide or indium tin oxide is employed in vertical cavity surface emitting lasers for vertical current injection. Continuous wave lasing at room temperature is achieved in GaAs/AlGaAs quantum well lasers. Devices with a 10 μm optical window which also serves as a vertical current injection inlet give lasing threshold currents as low as 3.8 mA. The differential series resistance is (350-450) Ω with a diode voltage of (5.1-5.6) V at the lasing threshold. Far field pattern of the laser emission is Gaussian-like with a full width at half maximum of 7°.

Claims

1. A semiconductor vertical cavity surface emitting laser comprising a semiconductor body which comprises a plurality of layers selected from Group III-V and II-VI compound semiconductors having nominal formula GaAs, InP, InGaAs, InGaPAs, AlAs, AlGaAs, and AlGaInAs, said plurality of layers including

an active region which generates optical radiation,

a bottom multilayer mirror which reflects said radiation,

a top multilayer mirror which partially reflects and partially transmits said radiation in a direction perpendicular to said active region, said top mirror including an ion-implanted region arranged peripherally of the layers of said top mirror and defining a window for confining passage of current and of lasing emission to an area defined by said window,

a dielectric layer upon said top mirror, said dielectric layer having a window aligned with said window in said ion-implanted region,

a metallic barrier layer upon said dielectric layer and contacting that surface of said top mirror layer which is exposed in said window of said dielectric mirror layer,

a layer of an optically transparent semiconductor material on said metal barrier layer forming a top electrode of the laser, said optically transparent layer having conductivity ranging from 1×

10³ to 1×

10⁵ Ω

^-1 cm^-1, light transmissivity of at least 80 percent and absorption of less than 10 percent, and

a bottom electrode for applying in unity with said top electrode an excitation current in direction substantially perpendicular to said active region and substantially parallel to the direction of propagation of optical radiation.

2. The laser of claim 1, in which said optically transparent semiconductor material of said top electrode is selected from the group consisting of cadmium tin oxide and indium tin oxide.

3. The laser of claim 2 in which the thickness of said top electrode ranges from 50 to 500 nm.

4. The laser of claim 2 in which the thickness of said top electrode ranges from 200 to 300 nm.

5. The laser of claim 1, in which the metal of said metallic barrier layer is selected from the group consisting of Ag, Au, AuBe, AuZn, Cr, and Ti.

6. The laser of claim 5, in which said metal is silver.

7. The laser of claim 6, in which the thickness of said silver layer ranges from 10 to 50 Å

.

8. The laser of claim 1, in which said dielectric material is selected from the group consisting of SiO₂, Si₃ N₄, and borosilicate glass.

9. The laser of claim 8, in which said dielectric material is SiO₂ deposited in a thickness of from 0.01 to 0.1 μ

m.

10. The laser of claim 1, in which said bottom mirror is a multilayer distributed Bragg reflection mirror comprising from 10 to 40 periods.

11. The laser of claim 10 in which said bottom mirror is a 30 period structure.

12. The laser of claim 11, in which said active region is GaAs, and each of said periods comprises a pair of quarterwave layers selected from AlAs and GaAs and from AlAs and Al₀.05 Ga₀.95 As.

13. The laser of claim 12, in which said active layer is GaAs, and each of said periods is of a structure which includes Al₀.14 Ga₀.86 As(500 Å

)/Al₀.57 Ga₀.43 As(100 Å

/AlAs (580 Å

)/Al₀.57 Ga₀.43 As(100 Å

).

14. The laser of claim 12, in which said bottom mirror structure is liearly graded.

15. The laser of claim 12, in which said bottom mirror structure is a superlattice graded structure.

16. The laser of claim 1, in which said top mirror is one-step graded multilayer distributed Bragg reflection mirror comprising from 2 to 20 periods.

17. The laser of claim 16, in which said active layer is GaAs and each of said periods of said top mirror is of a structure which includes Al₀.14 Ga₀.86 As(500 Å

)/Al₀.57 Ga₀.43 As(100 Å

/AlAs (580 Å

)/Al₀.57 Ga₀.43 As(100 Å

).

18. The laser of claim 1, in which said ion-implanted region includes ions selected from H⁺ and O⁺.

19. The layer of claim 18, in which said ion is H⁺.