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Method for fabricating semiconductor devices by use of an N.sup.+ buried layer for complete isolation

  • US 5,116,777 A
  • Filed: 04/30/1990
  • Issued: 05/26/1992
  • Est. Priority Date: 04/30/1990
  • Status: Expired due to Term
First Claim
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1. A method for fabricating a semiconductor memory device, comprising the steps of:

  • forming an N-type buried layer in a substrate;

    forming an epitaxial silicon layer above said buried layer;

    forming a plurality of P-type regions in said epitaxial layer;

    forming a plurality of contacts to said N-type buried layer through said epitaxial layer wherein the plurality of contacts are spaced at regular intervals throughout the memory array; and

    forming an array of N-channel field effect devices in said P-type regions.

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