Ambient light rejecting quad photodiode sensor

• US 5,117,099 A
• Filed: 10/29/1990
• Issued: 05/26/1992
• Est. Priority Date: 09/01/1989
• Status: Expired due to Term

• Current Assignee: Terrence C. Schmidt
• Original Assignee: Terrence C. Schmidt
• Inventors: Schmidt, Terrence C.
• Primary Examiner(s): Nelms, David C.
• Application Number:
  US07/604,864
• Time in Patent Office: 575 Days
• Field of Search: 250/210, 250/208.2, 250/208.4, 250/208.6, 250/214 C, 250/214 R, 250/238, 250/349, 358/213.16, 374/130, 374/124, 374/178, 356/222
• US Class Current: 250/208.2
• CPC Class Codes: H04N 9/28 Arrangements for convergence or focusing

Abstract

An ambient light rejecting quad photodiode sensor having compensation diodes connected with reverse polarity to respective quadrant photodiodes within the sensor, the compensation diodes being located outside of the area of illumination. By direct connection of compensation diodes in reverse polarity to each quadrant of the quad photodiodes, a large boost in signal to noise ratio is achieved for eliminating the effects of ambient room light as well as sensor dark current.

Claims

1. A photodiode array for detecting a projected image in the presence of ambient light, comprising a plurality of image sensing photodiodes connected together in parallel with like polarity, and a plurality of further photodiodes connected in parallel with and with reverse polarity to respective ones of said image sensing photodiodes, for compensating the effects of said ambient light on and sensor dark current within said image sensing diodes.

2. The photodiode array of claim 1, wherein said plurality of image sensing photodiodes are arranged in a quadrant.

3. The photodiode array of claim 2, wherein respective ones of said further photodiodes are disposed at respective corners of said quadrant.

4. The photodiode array of claim 1, wherein said further photodiodes are substantially electrically matched with said image sensing photodiodes.

5. The photodiode array of claim 1, wherein under uniform illumination the photocurrent within said image sensing photodiodes is equal to the photocurrent within said further photodiodes within +/-10%.

6. The photodiode array of claim 1, wherein each of said image sensing and further photodiodes has an active area of approximately 0.8×

0.8 mm with a metalization separation of about 0.1 mm.

7. The photodiode array of claim 3, wherein said respective ones of said further photodiodes are located within about 0.15 mm of said respective corners.