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High resolution amorphous silicon radiation detectors

  • US 5,117,114 A
  • Filed: 12/11/1989
  • Issued: 05/26/1992
  • Est. Priority Date: 12/11/1989
  • Status: Expired due to Term
First Claim
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1. Detector elements in an array of such elements for high energy particles or photons that move through the detector, with each detector element comprising:

  • first and second electrodes lying in approximately parallel planes and being spaced apart from each other;

    an amorphous film including a mixture of at least 60 percent Si;

    H and at most 40 percent Ge;

    H, deposited approximately in a plane positioned between and adjacent to the first and second electrodes, the film having at least three contiguous regions, a first region of first electrical conductivity type adjacent to the first electrode, a second region of second electrical conductivity type opposite to the first conductivity type adjacent to the second electrode, and an intrinsic region positioned between the first and second regions where the first and second regions have smaller thickness than the thickness of the intrinsic region;

    bias means, electrically connected to the first and second electrodes, for impressing an electrical field between the first and second electrodes; and

    readout means, positioned adjacent to the first and second electrodes and electrically connected thereto, for selectively reading the voltage or current developed across the amorphous film.

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