Control circuitry for quartz crystal deposition monitor

• US 5,117,192 A
• Filed: 01/12/1990
• Issued: 05/26/1992
• Est. Priority Date: 01/12/1990
• Status: Expired due to Term

• Current Assignee: INFICON GmbH (Inficon Holding AG)
• Original Assignee: Leybold Inficon Incorporated (Inficon Holding AG)
• Inventors: Hurd, Clarence
• Primary Examiner(s): Wieder, Kenneth A.
• Assistant Examiner(s): Regan, Maura K.
• Application Number:
  US07/464,371
• Time in Patent Office: 865 Days
• Field of Search: 324/727, 324/71.1, 324/71.5, 310/316
• US Class Current: 324/727
• CPC Class Codes: C23C 14/546 using crystal oscillators
• CPC Class Codes: G01B 7/066 for measuring thickness of coating apparatus or processes for the manufacture of piezoelectric or electrostrictive resonators for obtaining desired frequency H03H3/04
• CPC Class Codes: G01R 23/07 using response of circuits tuned on resonance, e.g. grid-drip meter
• CPC Class Codes: G01R 29/22 Measuring piezoelectric properties

Abstract

A monitoring circuit monitors a piezoelectric crystal for changes in its resonant frequency as a film of material is vacuum deposited on it, e.g. to control a source of vapors of the material. A controllable frequency generator generates a drive signal of a accurately known frequency and phase within a band of RF frequencies that includes the resonant frequency of the crystal. The RF signal is applied through a duplexing circuit to the crystal, and a response signal is applied through the duplexing circuit to a signal amplifier and limiter circuit to a phase detector. The phase detector is also supplied with the RF drive signal, and has a phase output signal which is zero when the crystal is at resonance, and is negative or positive when the applied RF signal is below or above resonance, respectively. A micro-controller can be employed for controllably sweeping the frequency of the drive signal and then monitoring the frequencies at which the phase detector signal indicates zero, to identify the frequency of each of the one or more resonances. A cable compensation control circuit can also be coupled to the duplexing circuit for balancing the reactance of the conductive paths associated with the crystal. This can include a voltage controlled capacitance and a portion of a transformer within the duplexing circuit.

Claims

1. Monitoring circuit for monitoring at least one resonant frequency of a piezoelectric crystal on which a film of material is being vacuum deposited to control a source of vapors of said material;

the monitoring circuit comprising;

a) controllable frequency generating means for generating a drive signal at a frequency, independent of the crystal resonance frequency, selected within a band of RF frequencies that includes the at least one resonant frequency of said piezoelectric crystal;

b) a duplexing circuit having an input coupled to said frequency generating means to receive said drive signal therefrom, a crystal terminal coupled to said crystal and supplying the drive signal to said crystal and receiving a response signal reflected back from the crystal, and an output terminal at which said response signal appears, the response signal having the frequency of said drive signal but a phase that depends on the proximity of the drive signal frequency to a resonant frequency of said crystal;

c) phase detector means supplied with said drive signal and said response signal and having a phase output signal whose value indicates the relative phase of the drive and response signals, from a negative level through zero to a positive level; and

d) controller means coupled to said frequency generating means and said phase detector means for controllably changing the frequency of said drive signal and monitoring the frequency at which said phase detector signal indicates a zero level to identify the frequency of each of said one or more resonances.

2. Monitoring circuit according to claim 1 wherein said controller means sweeps said drive signal frequency at a slew rate exceeding the rate at which said crystal resonance changes with increased film thickness.

3. Monitoring circuit according to claim 1 further comprising a cable compensation control circuit coupled to said duplexing means for controllably balancing the impedance of conductive paths connecting the duplexing means to the crystal, the cable control circuit including a voltage controlled impedance device coupled to the duplexing means and a control terminal to which a predetermined control voltage level is applied to select a predetermined balancing impedance for said voltage controlled impedance device.

4. Monitoring circuit according to claim 3 wherein said controller means includes means to generate said predetermined control voltage level, according to a predetermined value stored in said controller means.

5. Monitoring circuit according to claim 1 further comprising a response signal level indicating circuit having an input coupled to said duplexing circuit output terminal and an output providing to said controller a level signal that indicates the level of said response signal.

6. Monitoring circuit according to claim 1 wherein said phase detector means includes a signal amplifier and limiter circuit having an input connected to the output terminal of said duplexing circuit and an output providing an amplified and limited version of said response signal, a reference amplifier and limiter circuit having an input connected to the input of the duplexing circuit and an output providing an amplified and limited version of said drive signal, and a phase detector having inputs connected respectively to the outputs of the signal amplifier and limiter circuit and the reference amplifier and limiter circuit, and an output providing said phase output signal.

7. Monitoring circuit according to claim 6 wherein said phase detector circuit is a multiplier.