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Ferroelectric capacitor memory circuit MOS setting and transmission transistor

  • US 5,121,353 A
  • Filed: 07/06/1990
  • Issued: 06/09/1992
  • Est. Priority Date: 07/06/1989
  • Status: Expired due to Term
First Claim
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1. A memory circuit, having ferroelectric capacitors, comprising:

  • a plurality of storage means, arranged in a matrix, each storage means of said plurality of storage means comprising a ferroelectric capacitor, having two electrodes, for storing data as a polarization state of said ferroelectric capacitor;

    transmission means, provided in said each storage means, for transmitting said data to and for reading said data into said each storage means; and

    setting means, provided in said each storage means, for keeping said two electrodes of said ferroelectric capacitor at the same electrical potential when said each storage means is not accessed;

    said transmission means being connected to said setting means and to one electrode of said each storage means; and

    said setting means being connected to both of said two electrodes of said ferroelectric capacitor in said each storage means.

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