Integrated optical arrangement having at least one optical waveguide integrated on a substrate of a semiconductor material and the method of manufacture

• US 5,125,065 A
• Filed: 08/27/1990
• Issued: 06/23/1992
• Est. Priority Date: 09/01/1989
• Status: Expired due to Term

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Wolff, Ulrich, Mueller, Gustav, Stoll, Lothar
• Primary Examiner(s): Ullah, Akm E.
• Application Number:
  US07/572,413
• Time in Patent Office: 666 Days
• Field of Search: 350/96.11-96.14
• US Class Current: 385/130
• CPC Class Codes: G02F 1/0151 modulating the refractive index
• CPC Class Codes: G02F 1/025 in an optical waveguide structure G02F1/017, G02F1/2257 take precedence
• CPC Class Codes: G02F 1/3133 the optical waveguides being made of semiconducting materials

Abstract

An integrated optical arrangement having at least one optical waveguide integrated a substrate of semiconductor material, characterized by the waveguide being a rib waveguide comprising the p-doped material disposed on a substrate which contains a waveguiding layer which is either an n-doped or an undoped material, said arrangement having either a pn or a pin junction between the p-doped material of the rib and the n-doped or undoped material of the waveguiding layer. In addition, a method for forming the various layer is disclosed.

Claims

1. In an integrated optical arrangement comprising at least one strip-shaped optical waveguide integrated on a substrate of semiconductor material, the improvements comprising said waveguide being a rib waveguide defined by a waveguiding layer of the substrate and a rib of semiconductor material being formed above this layer, said waveguiding layer being a material selected from a group consisting of undoped materials and n-doped materials, said arrangement including a junction between a p-doped material and a non-p-doped material being integrated in the region of the rib waveguide, either above or below the waveguiding layer, said junction being arranged at a distance from the waveguiding layer with the p-doped material of the junction being arranged on a side of the junction facing away from the waveguiding layer, said arrangement including means for contacting said junction from the outside.

2. In an arrangement according to claim 1, wherein the p-doped material is contained in the rib and the n-doped material is contained in the substrate, at least under the waveguiding layer.

3. In an arrangement according to claim 2, wherein the rib and the substrate are composed of InP and the waveguiding layer is composed of InGaAsP and includes a spacer layer of InGaAsP having a refractive index that is lower in comparison to the material of the waveguiding layer being disposed between the waveguiding layer and said junction.

4. In an arrangement according to claim 3, wherein the distance between the junction and the waveguiding layer is selected to be shorter than a diffusion length of electrical charge carrier to be introduced in said waveguiding layer.

5. In an arrangement according to claim 4, which includes two rib waveguides being integrated on the substrate proceeding side-by-side in sections at a slight distance so that an optical mode guided in one rib waveguide laterally crosses over into the other rib waveguide, each rib waveguide being defined by the waveguiding layer of a material selected from a group consisting of n-doped materials and undoped materials and by a respective rib of semiconductor material positioned above said waveguiding layer, each of the rib waveguides having a junction, which is contactable from the outside, extending over the entire length of the rib being integrated in the region of each rib waveguide above or below the waveguiding layer and being integrated so that the junction of p-doped material to another material is arranged at a distance from the waveguiding layer and the p-doped material is arranged at the side of said junction, respectively, that faces away from said layer and, thereby, the junction of at least one rib waveguide is contacted in said sections.

6. In an integrated optical arrangement according to claim 2, wherein the waveguiding layer is of a n-doped material and said junction is a pn junction.

7. In an integrated optical arrangement according to claim 2, wherein an undoped layer is interposed between said p-doped rib and the substrate and said junction is a pin junction.

8. A method of forming an integrated optical arrangement having at least one strip of optical waveguide integrated on the substrate of a semiconductor material, said waveguide being a rib waveguide defined by a rib of p-doped material being disposed on a substrate of n-doped material, said substrate of n-doped material having a waveguiding layer spaced from the rib of p-doped material, and said waveguide having a junction between the p-doped material and the n-doped material, said method comprising the steps of providing a substrate of n-doped semiconductor material, forming a waveguiding layer of a material selected from a group consisting of n-doped and undoped materials on a surface of the substrate, providing a spacer layer on said waveguiding layer, said spacer layer being selected from said group of materials, providing a p-doped layer on said spacer layer, removing portions of said p-doped layer down to said spacer layer to form a rib for each waveguide, covering said rib with an electrically insulating layer, forming a contact window in said insulating layer adjacent each rib, forming electrical contacts on said insulating layer engaging said rib through said window, and applying a second electrode on a surface of the substrate opposite said ribs.