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Microwave plasma film deposition system

  • US 5,125,358 A
  • Filed: 07/25/1989
  • Issued: 06/30/1992
  • Est. Priority Date: 07/26/1988
  • Status: Expired due to Term
First Claim
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1. A microwave plasma film deposition system, comprising:

  • a rectangular waveguide for feeding microwaves by way of a microwave feeding window provided at an end thereof, the size of a shorter one of vertical and horizontal sides of a cross-section of said rectangular waveguide being equal to or shorter than the mean free path of an electron of a gas in said rectangular waveguide;

    a plasma cavity in communication with another end of said waveguide and further having a discharge gas inlet which is not in communication with said waveguide;

    a specimen chamber in communication with said plasma cavity and having a substrate setting rest therein and a material gas inlet; and

    magentic field applying means provided near said plasma cavity for generating plasma in said plasma cavity,wherein the strength B (TESLA) of the magnetic field near said microwave feeding window satisfies the following condition;

    
    
    space="preserve" listing-type="equation">B<

    (1/r)√

    (2mT)/ewhere 2r is the size of a shorter one of vertical and horizontal sides of a cross-section of said rectangular waveguide;

    m (kg) is the mass of the electron;

    e (C) is the electric charge of the electron; and

    T (eV) is the energy sufficient to ionize the gas.

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