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Process for the selective encapsulation of an electrically conductive structure in a semiconductor device

  • US 5,126,283 A
  • Filed: 05/21/1990
  • Issued: 06/30/1992
  • Est. Priority Date: 05/21/1990
  • Status: Expired due to Term
First Claim
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1. A method for fabricating a semiconductor device comprising:

  • providing a substrate having a device region thereon;

    forming a dielectric layer to overlie the substrate;

    forming a refractory-metal conductor on the device region having a horizontal surface and substantially vertical wall surfaces;

    forming a layer of Al overlying the refractory metal conductor and the dielectric layer;

    reacting Al and refractory metal to form an Al alloy layer;

    etching away unreacted Al from the surface of the substrate; and

    oxidizing the Al alloy layer to form an Al2 O3 layer overlying the refractory-metal conductor, wherein the Al2 O3 layer overlies only the horizontal and substantially vertical wall surfaces of the refractory-metal conductor.

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