Monolithic micromechanical accelerometer

• US 5,126,812 A
• Filed: 05/23/1990
• Issued: 06/30/1992
• Est. Priority Date: 02/14/1990
• Status: Expired due to Term

• Current Assignee: Charles Stark Draper Laboratory Incorporated
• Original Assignee: Charles Stark Draper Laboratory Incorporated
• Inventors: Greiff, Paul
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Meier, Stephen D.
• Application Number:
  US07/528,051
• Time in Patent Office: 769 Days
• Field of Search: 357/25, 357/26, 357/55
• US Class Current: 257/417
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/0888 for indicating angular acceleration

Abstract

A micromechanical accelerometer is disclosed comprising a mass of monocrystalline silicon in which a substantially symmetrical plate attached to a silicon frame by flexible linkages is produced by selective etching. The plate has a plurality of apertures patterned and etched therethrough to speed further etching and freeing of the plate and flexible linkages, suspending them above a void etched beneath. The plate has a weight disposed thereon near an end remote from the flexible linkages. The plate is capable of limited motion about an axis created by the flexible linkages. Stop means limit motion of the plate about the axis. Strain relief tension beams are provided to relieve stress induced by boron diffusion necessary to provide etch stopping and the tension beams are trimmable in a manner which permits tuning of the resonant frequency of the plate. Grooves or depressions are provided in the flexible linkages to resist bending or buckling without increasing torsional stiffness. The plate and flexible linkages are electrically isolated from the silicon mass and frame by dielectric or P-N junction isolation. Integral P-N junction electrodes and surface bridging electrodes may be used to provide top to bottom symmetry in torquing and sensing of the plate while maintaining isolation and monlithic construction. Bias and readout circuitry used to sense and torque the plate may be provided integrally with the plate and formed during plate processing.

Claims

1. A monolithic micromechanical accelerometer that includes a semiconductor transducer element, comprising:

a mass of semiconductor material having a void on a top surface extending downwards, said mass of semiconductor material comprising a silicon frame;

a plurality of flexible linkages integral with said frame for coupling said transducer element to said frame at opposite sides, said plurality of flexible linkages having first and second ends, said first ends being connected to said silicon frame;

a plurality of electrodes disposed proximate to said void;

a plate connected integrally to and substantially symmetrical with respect to said second ends of said plurality of flexible linkages, said plate having a plurality of apertures therethrough and having a portion facing said plurality of electrodes; and

a weight disposed asymmetrically on said plate and proximate to an end of said plate.

5. The micromechanical accelerometer of claim 1, 2, 3 or 4 wherein at least one of said plurality of electrodes is integral to said mass of silicon and facing a bottom side of said plate.

6. The micromechanical accelerometer of claim 5 wherein said at least one of said plurality of electrodes is formed integrally as a highly doped P-type region patterned on an N-type silicon sub-surface.

7. The micromechanical accelerometer of claim 1, 2, 3 or 4 wherein at least one of said plurality of electrodes is a surface bridging electrode traversing said transducer element.

8. The micromechanical accelerometer of claim 7 wherein said surface bridging electrodes are supported above said frame on a region of doped material.

9. The micromechanical accelerometer of claim 8 wherein said doped region of material further comprises an isolating wall and an isolating floor doped with one of a P-type and an N-type dopant and an isolating intermediate area doped with the other of said P-type and N-type dopant and wherein each of said plurality of bridging electrodes is electrically isolated by biasing said doped region relative to said mass to effect a driven shield comprising said isolating wall, said isolating floor and said isolating intermediate area.

10. The micromechanical accelerometer of claim 1, 2, 3 or 4 further comprising isolation means for electrically isolating said transducer element from said silicon frame.

11. The micromechanical accelerometer of claim 10 wherein said isolation means is provided by a dielectric layer.

12. The micromechanical accelerometer of claim 11 wherein said isolation means is provided by a layer of oxide.

13. The micromechanical accelerometer of claim 11 wherein said isolation means is provided by a layer of silicon nitride.

14. The micromechanical accelerometer of claim 10 wherein said isolation means is provided by a combination of oxide and silicon nitride.

15. The micromechanical accelerometer of claim 10 wherein said isolation means is provided by doping said flexible linkages P-type and maintaining said silicon frame N-type effecting a P-N junction where said flexible linkages and said frame meet.

16. The micromechanical accelerometer of claim 1, 2, 3 or 4 further comprising stop means for limiting the extend of rotation of said plate about an axis formed by said first and second ends of said flexible linkages.

17. The micromechanical accelerometer of claim 16 wherein said stop means has a stem extending through an aperture in said plate and a cap disposed above said plate whereby said plate is free to move about said stem and is limited it its movement by said cap.

18. The micromechanical accelerometer of claim 16 wherein said stop means is a cantilever beam extending outward from said frame above said transducer element.

19. The micromechanical accelerometer of claim 16 wherein said stop means is a protuberant member extending beneath said plate in proximity to an end thereof.

20. The micromechanical accelerometer of claim 16 wherein a surface opposite said stop means comprises a material resistant to sticking.

2. A monolithic micromechanical accelerometer that includes a semiconductor transducer element, comprising:

a mass of semiconductor material having a void on a top surface extending downwards, said mass of semiconductor material comprising a silicon frame;

a plurality of flexible linkages integral with said frame for coupling said transducer element to said frame at opposite sides, said plurality of flexible linkages having first and second ends, said first ends being connected to said silicon frame;

at least one groove disposed in each of said plurality of flexible linkages said at least one groove substantially precluding bending and buckling of respective ones of said plurality of flexible linkages;

a plurality of electrodes disposed proximate to said void;

a plate connected integrally to and substantially symmetrical with respect to said second ends of said plurality of flexible linkages, said plate having a plurality of apertures therethrough and having a portion facing said plurality of electrodes; and

a weight disposed asymmetrically on said plate and proximate to an end of said plate.

21. The micromechanical accelerometer of claim 2 or 4 wherein said at least one groove has a substantially V-shaped cross-section which is formed in each of said plurality of flexible linkages by anisotropic etching.

22. The micromechanical accelerometer of claim 2 or 4 wherein said at least one groove has a substantially U-shaped cross-section which is formed in each of said plurality of flexible linkages by plasma etching.

3. A monolithic micromechanical accelerometer that includes a semiconductor transducer element, comprising:

a mass of semiconductor material having a void on a top surface extending downwards, said mass of semiconductor material comprising a silicon frame;

a plurality of flexible linkages integral with said frame for coupling said transducer element to said frame at opposite sides, said plurality of flexible linkages having first and second ends, said first ends being connected to said silicon frame;

a plurality of electrodes disposed proximate to said void;

a plate connected integrally to and substantially symmetrical with respect to said second ends of said plurality of flexible linkages, said plate having a plurality of apertures therethrough and having a portion facing said plurality of electrodes;

relief means, disposed on said plate proximate to said plurality of flexible linkages for relieving stresses on said plate created by doping of said transducer element; and

a weight disposed asymmetrically on said plate and proximate to an end of said plate.

23. The micromechanical accelerometer of claim 3 or 4 wherein said relief means comprises a beam formed by a slot disposed in said plate in proximity to second ends of each of said plurality of flexible linkages.

24. The micromechanical accelerometer of claim 23 wherein said beam is trimmable in a manner which affects the dynamic response of said plate.

4. A monolithic micromechanical accelerometer that includes a semiconductor transducer element, comprising:

a mass of semiconductor material having a void on a top surface extending downwards, said mass of semiconductor material comprising a silicon frame;

a plurality of flexible linkages integral with said frame for coupling said transducer element to said frame at opposite sides, said plurality of flexible linkages having first and second ends, said first ends being connected to said silicon frame;

at least one groove disposed in each of said plurality of flexible linkages said at least one groove substantially precluding bending and buckling of respective ones of said plurality of flexible linkages;

a plurality of electrodes disposed proximate to said void;

a plate connected integrally to and substantially symmetrical with respect to said second ends of said plurality of flexible linkages, said plate having a plurality of apertures therethrough and having a portion facing said plurality of electrodes;

relief means, disposed on said plate proximate to said plurality of flexible linkages for relieving stresses on said plate created by doping of said transducer element; and

a weight disposed asymmetrically on said plate and proximate to an end of said plate.