Electronic component and a method for manufacturing the same

• US 5,126,921 A
• Filed: 07/03/1991
• Issued: 06/30/1992
• Est. Priority Date: 07/06/1990
• Status: Expired due to Term

• Current Assignee: Akira Fujishima, Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Akira Fujishima
• Inventors: Fujishima, Akira, Kondo, Shigeo
• Primary Examiner(s): GRIFFIN, DONALD
• Application Number:
  US07/725,345
• Time in Patent Office: 363 Days
• Field of Search: 29/25.03, 361/525, 361/526, 361/527, 361/321
• US Class Current: 361/525
• CPC Class Codes: H01G 4/10 Metal-oxide dielectrics H01G4/085 takes precedence
• CPC Class Codes: H01G 4/20 using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 H01G4/12 takes precedence
• CPC Class Codes: H01P 7/10 Dielectric resonators
• CPC Class Codes: H05K 1/0306 Inorganic insulating substrates, e.g. ceramic, glass
• CPC Class Codes: H05K 3/185 by making a catalytic pattern by photo-imaging

Abstract

An electronic component such as a capacitor having a pair of electrodes interposing a dielectric layer and a photosensitive metal oxide semiconductor layer therebetween. The electronic component is formed by immersing the layered body of one electrode, the dielectric, and the metal oxide layer in an electroless plating catalytic solution to have the catalyst deposited on the metal oxide layer and then by forming an electrode on the catalyst layer. The catalyst can be deposited in a pattern by irradiating the metal oxide layer with light during immersing the body in the catalytic solution.

Claims

1. An electronic component comprising a dielectric layer, a metal oxide semiconductor layer as a photosensitive material formed on the dielectric layer, and a first and a second electrodes interposing the dielectric layer and the metal oxide semiconductor layer.

2. An electronic component according to claim 1, wherein the electronic component is a capacitor.

3. An electronic component according to claim 2, wherein the first electrode is an aluminum substrate, and the dielectric layer is an aluminum oxide layer formed on the aluminum substrate.

4. An electronic component according to claim 3, wherein the oxide semiconductor layer is formed by thermal decomposition of an organic metal compound.

5. An electronic component according to claim 3, wherein the metal oxide semiconductor layer is a zinc oxide layer.

6. An electronic component according to claim 5, wherein a manganese dioxide layer is formed between the aluminum oxide layer and the zinc oxide layer.

7. An electronic component according to claim 6, wherein the second electrode is copper.

8. An electronic component according to claim 6, wherein the second electrode is conductive carbon.

9. An electronic component according to claim 6, wherein the second electrode is a layered structure of a conductive polymer layer and a conductive carbon layer.

10. An electronic component according to claim 3, wherein the metal oxide semiconductor layer is a tungsten oxide layer.

11. An electronic component according to claim 3, wherein the metal oxide semiconductor layer is a titanium oxide layer.

12. An electronic component according to claim 2, wherein an electroless plating catalyst layer is formed between the metal oxide semiconductor layer and the second electrode.

13. An electronic component according to claim 12, wherein the electroless plating catalyst is palladium.

14. An electronic component according to claim 1, wherein the dielectric layer is ceramic.

15. An electronic component according to claim 14, wherein the dielectric layer is ceramic and the electronic component is a capacitor.

16. An electronic component according to claim 14, wherein the electronic component is a microwave dielectric resonator.

17. A method for manufacturing an electronic component comprising the steps of:

forming a dielectric layer and a metal oxide semiconductor layer as a photosensitive material on an electrode substrate in this order;

immersing the layered substrate in an electroless plating catalytic solution so as to deposit the electroless plating catalyst on the metal oxide semiconductor layer; and

forming an electrode on the deposited catalyst.

18. A method according to claim 17, wherein the immersing step includes irradiating the metal oxide semiconductor layer with light having energy greater than the band gap thereof through a mask having a pattern so as to deposit the electroless plating catalyst in the pattern of the mask.

19. A method according to claim 17, wherein the electronic component is a capacitor.

20. A method according to claim 17, wherein the electrode substrate is a conductive metal substrate, and the dielectric layer is an oxide layer obtained by oxidation of the conductive metal.

21. A method according to claim 17, wherein the dielectric layer is a ceramic layer.

22. A method according to claim 17, wherein the electroless plating catalyst is palladium.

23. A method according to claim 17, wherein the metal oxide semiconductor layer is formed on the dielectric layer by thermal decomposition of an organic metal compound.

24. A method according to claim 17, wherein the electrode is formed by depositing metal on the deposited catalyst by immersing the layered substrate in an electroless plating solution.

25. A method according to claim 17, wherein the electrode is formed by applying conductive carbon to the deposited catalyst by screen printing.

26. A method for manufacturing an electronic component comprising the steps of:

forming a dielectric layer and a metal oxide semiconductor layer as a photosensitive material on an electrode substrate in this order; and

immersing the layered substrate in an electroless plating solution containing a monomer under irradiation of light having energy greater than the band gap of the metal oxide semiconductor layer through a mask having a pattern so as to deposit a conductive polymer on a predetermined portion of the metal oxide semiconductor layer.

27. A method according to claim 26, wherein the electronic component is a capacitor.

28. A method according to claim 26, wherein the metal oxide semiconductor layer is a titanium oxide layer, and the monomer is pyrrole.